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    Untitled

    Abstract: No abstract text available
    Text: b 5 4 cìfia ì O D l ô O l b Tbfi • MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFX35V9500 9.5~ 10.0G Hz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FX35V 9500 is an internally impedance matched GaAs power FET especially designed for use in 9.5 ~ 10.0


    OCR Scan     		PDF GFX35V9500 FX35V

    MGFX35

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! GFX35V9500 i 9 .S — 10.0GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 5 V 9 5 0 0 is an internally impedance matched GaAs power F E T especially designed fo r use in 9 .5 ~ 10 .0 G H z band am plifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF MGFX35V9500 MGFX35