Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GHZ TRANSISTOR Search Results

    GHZ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    GHZ TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT


    Original
    AT-41486 AT-41486 5965-8928E PDF

    Untitled

    Abstract: No abstract text available
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT


    Original
    AT-41486 5965-8928E 5968-2031E PDF

    manual mpga478b motherboard

    Abstract: mpga478b motherboard diagram mpga478b INTEL 845 MOTHERBOARD CIRCUIT diagram mpga478b motherboard intel mpga478b MOTHERBOARD MANUAL Socket 478 VID pinout intel mpga478b MOTHERBOARD SERVICE MANUAL PGA zif socket 478 298643
    Text: Intel Pentium® 4 Processor with 512-KB L2 Cache on 0.13 Micron Process at 2 GHz, 2.20 GHz, 2.26 GHz, 2.40 GHz, 2.50 GHz, 2.53 GHz, 2.60 GHz, 2.66 GHz, and 2.80 GHz Datasheet Product Features • ■ ■ ■ ■ ■ ■ ■ ■ Available at 2 GHz, 2.20 GHz, 2.26 GHz,


    Original
    512-KB manual mpga478b motherboard mpga478b motherboard diagram mpga478b INTEL 845 MOTHERBOARD CIRCUIT diagram mpga478b motherboard intel mpga478b MOTHERBOARD MANUAL Socket 478 VID pinout intel mpga478b MOTHERBOARD SERVICE MANUAL PGA zif socket 478 298643 PDF

    AT-41486

    Abstract: NF50 S21E AT41486 AT-41486-BLK AT-41486-TR1
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT


    Original
    AT-41486 AT-41486 AT41486 RN/50 5965-8928E 5968-2031E NF50 S21E AT-41486-BLK AT-41486-TR1 PDF

    NE66100

    Abstract: transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr - 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP


    OCR Scan
    NE681 NE66100 transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806 PDF

    Untitled

    Abstract: No abstract text available
    Text: What HEWLETT* miltm PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz


    OCR Scan
    AT-41410 AT-41410 Rn/50 PDF

    LB 1639

    Abstract: transistor TT 3043
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP


    OCR Scan
    NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B LB 1639 transistor TT 3043 PDF

    manual mpga478b motherboard

    Abstract: mpga478b motherboard intel mpga478b MOTHERBOARD installation MANUAL mpga478b motherboard diagram intel pentium 478 VID0 VID1 845 MOTHERBOARD CIRCUIT diagram computer motherboard circuit diagram 2001-2002 pin diagram intel pentium4 29864 INTEL 845 MOTHERBOARD CIRCUIT diagram
    Text: Intel Pentium® 4 Processor with 512-KB L2 Cache on 0.13 Micron Process at 2 GHz – 3.06 GHz, with Support for Hyper-Threading Technology1 at 3.06 GHz Datasheet • ■ ■ ■ ■ ■ ■ ■ ■ Available at 2 GHz, 2.20 GHz, 2.26 GHz, 2.40 GHz, 2.50 GHz, 2.53 GHz, 2.60 GHz,


    Original
    512-KB 478-pin manual mpga478b motherboard mpga478b motherboard intel mpga478b MOTHERBOARD installation MANUAL mpga478b motherboard diagram intel pentium 478 VID0 VID1 845 MOTHERBOARD CIRCUIT diagram computer motherboard circuit diagram 2001-2002 pin diagram intel pentium4 29864 INTEL 845 MOTHERBOARD CIRCUIT diagram PDF

    AT-41410

    Abstract: AT41410
    Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz


    OCR Scan
    AT-41410 AT-41410 Rn/50 AT41410 PDF

    transistor TT 3043

    Abstract: IJEAD
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: h = 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP


    OCR Scan
    NE681 b4E752S D0hSb73 transistor TT 3043 IJEAD PDF

    socket 478 pinout bsel

    Abstract: Socket 478 VID pinout MPGA478B mpga478b motherboard diagram INTEL 845 MOTHERBOARD CIRCUIT diagram pentium 4 northwood 2.53 845 MOTHERBOARD CIRCUIT diagram intel pentium 478 VID0 VID1 manual mpga478b motherboard mpga478b motherboard
    Text: Intel Pentium® 4 Processor with 512-KB L2 Cache on 0.13 Micron Process at 2 GHz – 3.06 GHz, with Support for Hyper-Threading Technology1 at 3.06 GHz Datasheet • ■ ■ ■ ■ ■ ■ ■ ■ Available at 2 GHz, 2.20 GHz, 2.26 GHz, 2.40 GHz, 2.50 GHz, 2.53 GHz, 2.60 GHz,


    Original
    512-KB 423-pin BX80528JK200G BX80528JK190G BX80528JK180G 256MB BX80528JK170GR2 BK80528JK170GR2 128MB BX80528JK170GR socket 478 pinout bsel Socket 478 VID pinout MPGA478B mpga478b motherboard diagram INTEL 845 MOTHERBOARD CIRCUIT diagram pentium 4 northwood 2.53 845 MOTHERBOARD CIRCUIT diagram intel pentium 478 VID0 VID1 manual mpga478b motherboard mpga478b motherboard PDF

    AT-41400

    Abstract: AT-41400-GP4 NF50 S21E chip die npn transistor
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth


    Original
    AT-41400 AT-41400 RN/50 5965-8922E AT-41400-GP4 NF50 S21E chip die npn transistor PDF

    702 TRANSISTOR sot-23

    Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    OCR Scan
    NE680 NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B 702 TRANSISTOR sot-23 mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331 PDF

    AT-41410

    Abstract: 41410 bipolar transistor 6 GHz UHF transistor GHz AT41410 NF50 S21E
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth


    Original
    AT-41410 AT-41410 AT41410 RN/50 5965-8923E 41410 bipolar transistor 6 GHz UHF transistor GHz NF50 S21E PDF

    AT-41435

    Abstract: GA1020 AT41435 NF50 S21E amplifier TRANSISTOR 12 GHZ
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41435 Features • Low Noise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth


    Original
    AT-41435 AT-41435 AT41435 RN/50 5965-8925E 5988-4733EN GA1020 NF50 S21E amplifier TRANSISTOR 12 GHZ PDF

    AT-41485

    Abstract: agilent at41485 S parameters of 5.8 GHz transistor AT41485 NF50 S21E 16MSG Ghz dB transistor
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz • High Gain-Bandwidth


    Original
    AT-41485 AT-41485 AT41485 RN/50 5965-8926E agilent at41485 S parameters of 5.8 GHz transistor NF50 S21E 16MSG Ghz dB transistor PDF

    MP4T856

    Abstract: 557 SOT-143 p-4 3000 478 150-1 MP4T85600 MP4T85633 MP4T85635 MP4T85639 S21E S22E
    Text: Moderate Power High fT NPN Silicon Transistor MP4T856 Series Package Outline Features •High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz •High Gain Bandwidth Product •8-9 GHz fT •High Power Gain - |S21E|2 = 15 dB @ 1 GHz - |S21E|2 = 9 dB @ 2 GHz


    Original
    MP4T856 OT-23 OT-143 557 SOT-143 p-4 3000 478 150-1 MP4T85600 MP4T85633 MP4T85635 MP4T85639 S21E S22E PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.8 GHz to 2.5 GHz Quadrature Modulator AD8346 High accuracy 1 degree rms quadrature error @ 1.9 GHz 0.2 dB I/Q amplitude balance @ 1.9 GHz Broad frequency range: 0.8 GHz to 2.5 GHz Sideband suppression: −46 dBc @ 0.8 GHz Sideband suppression: −36 dBc @ 1.9 GHz


    Original
    AD8346 16-lead CO346ARUZ-REEL AD8346ARUZ-REEL71 AD8346-EVAL 16-Lead PDF

    41470

    Abstract: UHF transistor GHz AT-41470 NF50 S21E
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth


    Original
    AT-41470 AT-41470 RN/50 5965-8927E 5966-4946E 41470 UHF transistor GHz NF50 S21E PDF

    transistor tj 2499

    Abstract: No abstract text available
    Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41435 Features • Low Noise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth


    Original
    AT-41435 AT-41435 RN/50 5965-8925E transistor tj 2499 PDF

    cdma QPSK modulation Walsh pilot

    Abstract: HP34970A Voltage to Current Converters HP8648C HP8593E AD8346 AD9761 ETC1-1-13 AD8346 ETC1-1-13 AFG2020
    Text: 0.8 GHz to 2.5 GHz Quadrature Modulator AD8346 High accuracy 1 degree rms quadrature error @ 1.9 GHz 0.2 dB I/Q amplitude balance @ 1.9 GHz Broad frequency range: 0.8 GHz to 2.5 GHz Sideband suppression: −46 dBc @ 0.8 GHz Sideband suppression: −36 dBc @ 1.9 GHz


    Original
    AD8346 16-lead AD8346ARU-REEL7 AD8346ARUZ-REEL AD8346ARUZ-REEL71 AD8346-EVAL 16-Lead cdma QPSK modulation Walsh pilot HP34970A Voltage to Current Converters HP8648C HP8593E AD8346 AD9761 ETC1-1-13 AD8346 ETC1-1-13 AFG2020 PDF

    Untitled

    Abstract: No abstract text available
    Text: What mLUM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz


    OCR Scan
    AT-41486 vailable111 AT41486 5965-8928E 5968-2031E PDF

    chip die npn transistor

    Abstract: No abstract text available
    Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz


    OCR Scan
    AT-41400 AT-41400 Rn/50 chip die npn transistor PDF

    2SC3583

    Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original
    NE681 NE681 24-Hour 2SC3583 kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE68139 NE68118 PDF