gm72v661641ct
Abstract: GM72V66441CT
Text: LG Semicon Co.,Ltd. REVISION HISTORY / Revision 1.0: July 1998 - Add PC100,7K 2-2-2 Specifications. - Update Icc Specifications. - Change Input Test Condition from 2.8/0.0V to 2.4/0.4V. - Added post SPD Information separately(7K/7J/10K) for Modules. - Add Minimum Capacitance Value for Component.
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PC100
7K/7J/10K)
GM72V66841CT/CLT
GM72V66841CT/CLT
TTP-54D)
TTP-54D
gm72v661641ct
GM72V66441CT
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gm72v661641ct
Abstract: GM72V66841
Text: LG Semicon Co.,Ltd. REVISION HISTORY / Revision 1.0: July 1998 - Add PC100,7K 2-2-2 Specifications. - Update Icc Specifications. - Change Input Test Condition from 2.8/0.0V to 2.4/0.4V. - Added post SPD Information separately(7K/7J/10K) for Modules. - Add Minimum Capacitance Value for Component.
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Original
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PDF
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PC100
7K/7J/10K)
TheGM72V661641CT/CLTis
GM72V661641CT/CLT
GM72V661641CT/CLT
TTP-54D)
TTP-54D
gm72v661641ct
GM72V66841
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GM72V66441ct
Abstract: GM72V66441 12A13 1641CT
Text: Preliminary VerO. 1 ,„ e . LG Semicon Co.,Ltd. GM72V66441CT-7/8/10 4 , 194,304 w o r d x 4 b i t x 4 b a n k SYN C HR O N O U S DYNAM IC RAM Description The G M 72V66441C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics
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72V66441C
GM72V66441CT-7/8/10
BA1/A13
BA0/A12
GM72V66441CT
72V6644ICT
TTP-54D)
TTP-54D
GM72V66441ct
GM72V66441
12A13
1641CT
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GM72V66441
Abstract: GM72V66841
Text: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V66841C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.
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GM72V66841CT
72V66841C
GM72V66841CT
TTP-54D)
GM72V66441
GM72V66841
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gm72v16821
Abstract: GMM2645233CTG gm72v16821ct
Text: LG Semicon SDRAM UNE-UP NOTE : * ; Comming Soors, f ; Under Development 11 LG Serntcon 2. SDRAM DIMM MODULE NOTE : * ; Comming Soon, f ; Under Development 12 SDRAM LINE-UP LG Semicon SDRAM LINE-UP SDRAM DIMM MODULE Contiuned NOTE : * ; Comming Soon, 1 1Under Development
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GM72V16421CT
400M1L)
512Kx
GMM27332233CTG
27332230CMTG
16Mx4)
100/125MHz
MAR98
144pin
66/83/100MHz
gm72v16821
GMM2645233CTG
gm72v16821ct
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gm72v661641ct
Abstract: 72V661641 GM72V661641 GM72V66441 vero cells 72V661641C 12A13 gm72v661641c
Text: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V661641C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.
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72V661641C
GM72V661641CT
GM72V661641CT
TTP-54D)
72V661641
GM72V661641
GM72V66441
vero cells
12A13
gm72v661641c
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gm72v16821ct
Abstract: GMM2645233CTG GM72V661641 GMM2734233CNTG GMM26416233CNTG gm72v16821dt GMM2644233CN GMM2644233 GM72V1682
Text: LG Semicon PRODUCT INDEX • 16M SDRAM GM72V16421CT 2M x 4 Bit, 2Bank, 3.3.V. 4K R e f- -25 GM72V16421DT 2M x 4 Bit, 2Bank, 3.3.V, 4K R e f-46 GM72V16821CT 1M x 8 Bit, 2Bank, 3.3.V, 4K R e f- 67
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GM72V16421CT
GM72V16421DT
GM72V16821CT
GM72V16821DT
GM72V161621CT
GM72V66441CT
GM72V66841CT
GM72V661641CT
16MByte
GMM2642227CNTG
GMM2645233CTG
GM72V661641
GMM2734233CNTG
GMM26416233CNTG
GMM2644233CN
GMM2644233
GM72V1682
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GM72V1682
Abstract: No abstract text available
Text: LG Semicon 16M SDRAM OPERATION 16M SDRAM Function State Diagram Automatic Transition after completion of command. Transition resulting from command input. Note: 1. After the auto-refresh operation, precharge is performed automatically and enter the IDLE state.
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