DELL inspiron power supply diagram
Abstract: Thinkpad 535X philips pcd500 dell inspiron ARMADA 300 ECC COMPAQ Toshiba Satelite C APPLE dock prius cf 44 pin to ide 1.8
Text: CompactFlash Card W7B6-S Series Version:1.02 June, 2001 Description CompactFlash™ Card W7B6-S series were made by Wintec Industries in Fremont, CA USA. It complies with CompactFlash™ specification, and is suitable for the usage of data storage memory medium for
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4MByte/96MByte/128MByte/160MByte/224MByte
W7B6016M1XG-S128
W7B6016M1XG-S7
W7B6032M1XG-S128
W7B6032M1XG-S7
W7B6048M1XG-S128
W7B6048M1XG-S7
W7B6064M1XG-S128
W7B6064M1XG-S7
W7B6032M1XG-S256
DELL inspiron power supply diagram
Thinkpad 535X
philips pcd500
dell inspiron
ARMADA 300 ECC
COMPAQ
Toshiba Satelite C
APPLE dock
prius
cf 44 pin to ide 1.8
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R3051
Abstract: R3081
Text: Evaluation Boards Vigilant Technologies SlotSaver 3000 Standard Features ❏ Supports four on-board Industry Pack I/O modules through 16MByte/second local bus ❏ I/O modules may be controlled by resident software, or from the host system CPU ❏ Unique control software provides high
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16MByte/second
32MHz
256KB
148th
R3051
R3081
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4Mx32 dram simm
Abstract: HMD4M32M2VE
Text: HANBit HMD4M32M2VE 16Mbyte 4Mx32 DRAM SIMM EDO MODE, 4K Refresh, 3.3V Part No. HMD4M32M2VE, HMD4M32M2VEG GENERAL DESCRIPTION The HMD4M32M2VE is a 4M x 32 bit dynamic RAM high-density memory module. The module consists of two CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages mounted on a 72-pin. A 0.1 or 0.22uF decoupling capacitor is mounted on
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HMD4M32M2VE
16Mbyte
4Mx32)
HMD4M32M2VE,
HMD4M32M2VEG
HMD4M32M2VE
50-pin
72-pin.
72-pin
HMD4M32M2VE----Lead
4Mx32 dram simm
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Untitled
Abstract: No abstract text available
Text: SMART SM5320440UUFUGU Modular Technologies September 8, 1997 16MByte 4M x 32 DRAM Module - 4Mx4 based 100-pin DIMM, Non-buffered Features Part Numbers • • • • • • • • • • • SM53204400UFUGU SM53204401UFUGU SM53204408UFUGU SM53204409UFUGU
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SM5320440UUFUGU
16MByte
100-pin
SM53204400UFUGU
SM53204401UFUGU
SM53204408UFUGU
SM53204409UFUGU
60/70/80ns
300mil
AMP-390070-6
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Untitled
Abstract: No abstract text available
Text: SMART SM5640230UUXUGU Modular Technologies March 31, 1997 16MByte 2M x 64 DRAM Module - 1Mx16 based 168-pin DIMM, Buffered Features Part Numbers • • • • • • • • • • • SM56402300UXUGU SM56402301UXUGU SM56402308UXUGU SM56402309UXUGU
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SM5640230UUXUGU
16MByte
1Mx16
168-pin
SM56402300UXUGU
SM56402301UXUGU
SM56402308UXUGU
SM56402309UXUGU
60/70/80ns
400mil
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Untitled
Abstract: No abstract text available
Text: SMART SM5720280UUDUGU Modular Technologies February 18, 1998 16MByte 2M x 72 DRAM Module - 2Mx8 based 168-pin DIMM, Non-buffered, ECC Features Part Numbers • • • • • • • • • • • SM57202800UDUGU SM57202801UDUGU SM57202808UDUGU SM57202809UDUGU
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SM5720280UUDUGU
16MByte
168-pin
SM57202800UDUGU
SM57202801UDUGU
SM57202808UDUGU
SM57202809UDUGU
50/60/70ns
300/400mil
AMP-390052-3
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Untitled
Abstract: No abstract text available
Text: SMART SM5360440UUEUUU Modular Technologies May 19, 1997 16MByte 4M x 36 DRAM Module - 4Mx4 based 72-pin SIMM, ECC Features Part Numbers • • • • • • • • • • • SM53604400UEUUU SM53604401UEUUU SM53604408UEUUU SM53604409UEUUU Standard
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SM5360440UUEUUU
16MByte
72-pin
SM53604400UEUUU
SM53604401UEUUU
SM53604408UEUUU
SM53604409UEUUU
60/70/80ns
300mil
AMP-7-382486-2
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Untitled
Abstract: No abstract text available
Text: SM5364000 June 1994 Rev 2 SMART Modular Technologies SM5364000 16MByte 4M x 36 CMOS DRAM Module (2K Refresh) General Description Features The SM5364000 is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36 bits, in a 72-pin, leadless, single-in-line memory module
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SM5364000
SM5364000
16MByte
16-megabyte
72-pin,
60/70/80ns
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Untitled
Abstract: No abstract text available
Text: SMART SM5320430UUF6GU Modular Technologies September 8, 1997 16MByte 4M x 32 DRAM Module - 4Mx16 based 100-pin DIMM, Non-buffered Features Part Numbers • • • • • • • • • • • SM53204301UF6GU SM53204309UF6GU Standard : JEDEC Configuration
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SM5320430UUF6GU
16MByte
4Mx16
100-pin
SM53204301UF6GU
SM53204309UF6GU
50/60/70ns
400mil
AMP-390070-6
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HANBit
Abstract: IN3064 KR Electronics 50-PIN HMF8M16F8V
Text: HANBit HMF8M16F8V-90 FLASH-ROM MODULE 16MByte 8M x 16-Bit – Memory Stack Type Part No. HMF8M16F8V- 90 GENERAL DESCRIPTION The HMF8M16F8V is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in an x16bit configuration. The module consists of eight 2M x 8 FROM mounted on a 100-pin, MMC connector FR4-printed circuit
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HMF8M16F8V-90
16MByte
16-Bit)
HMF8M16F8V-
HMF8M16F8V
x16bit
100-pin,
50-pin
HANBit
IN3064
KR Electronics
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Untitled
Abstract: No abstract text available
Text: March 1997 Revision 2.1 DATA SHEET SDC2UV6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SDC2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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SDC2UV6412-
16MByte
16-megabtye
168-pin,
MB811171622A-
1Mx16
MP-SDRAMM-DS-20319-3/97
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2MX16
Abstract: No abstract text available
Text: July 1997 Revision 1.0 data sheet EDC2UV7282B- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC2UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 72 bits, in a 168-pin, dual-in-line (DIMM) memory module with ECC.
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EDC2UV7282B-
16MByte
EDC2UV7282B-60
16-megabyte
168-pin,
MB81V17805B-60
2MX16
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Untitled
Abstract: No abstract text available
Text: August 1996 Revision 1.0 I DATA SHEET S 0 B 2 U V 6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SOB2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIM M) package.
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16MByte
SOB2UV6412-
16-megabtye
144-pin,
MB811171622A-
200mV.
144-pin
374T75b
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Untitled
Abstract: No abstract text available
Text: WHITE /MICROELECTRONICS V Z Ä WPF29161-120X7X1 16MBYTE 4Mx32 FLASH (5VSupply; 5V or 12V Program) SIM M MODULE P R E L IM IN A R Y * FEATURES GENERAL DESCRIPTION • A cce s s T im e of 120ns The W h i t e M ic r o e le c tro n ic s W P F 2 9 1 61-120X7X1 is a 4 M x 32 bits
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WPF29161-120X7X1
16MBYTE
4Mx32)
120ns
61-120X7X1
WPF291B1-120X7XI
80-pin
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Untitled
Abstract: No abstract text available
Text: cP FUJI March 1997 Revision 2.1 DATA SHEET - * SDC2UV6412- 67/84/100/125 T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The SDC2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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SDC2UV6412-
16MByte
16-megabtye
168-pin,
B811171622A-
200mV.
168-pin
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Untitled
Abstract: No abstract text available
Text: cP FUJI March 1997 Revision 2.1 DATA SHEET - * SDC2UV6482 A -(67/84/100/125) T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The SDC2UV6482(A)-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized
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SDC2UV6482
16MByte
16-megabtye
168-pin,
B81117822A-
16MByte
V6482
168-pin
SDC2UV6482)
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Untitled
Abstract: No abstract text available
Text: cP July 1996 Revision 1.0 DATA S H E E T FUJI - " SD C 2U V6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SDC2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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V6412-
16MByte
SDC2UV6412-
16-megabtye
168-pin,
B811171622A-
1Mx16
200mV.
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Untitled
Abstract: No abstract text available
Text: cP August 1996 Revision 1.0 FUJI' DATA SHEET - * SDC2U V7282- 67/84/100/125 T-S 16MByte (2M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC2UV7282-(67/84/100/125)T-S is a high performance, 16 megabtye synchronous, dynamic RAM module organized as
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V7282-
16MByte
SDC2UV7282-
168-pin,
1117822A-
16MByte
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COMM CON WORLDWIDE
Abstract: No abstract text available
Text: November 1996 Revision 1.0 FUJITSU HATA G H F F T EDC2B V7282- 60/70 JG-S 16MByte (2M x 72) CMOS EDO DRAM Module -3.3V (ECC), Buffered General Description The E D C 2 B V 7 2 8 2 -(6 0 /7 0 )JG -S is a high pe rfo rm an ce, EDO (E xten ded D ata O ut) 16-m egabyte dyn am ic RAM m odule org an ized
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V7282-
16MByte
168-pins,
COMM CON WORLDWIDE
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ESA4UN3242A
Abstract: No abstract text available
Text: cO IITSU April 1997 Revision 1.1 data sh e e t ESA4UN324 2/4 (A)-(60/70)(J/T)(G/S)-S 16MByte (4M x 32) CMOS EDO DRAM Module General Description The ESA4UN324(2/4)(A)-(60/70)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM
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ESA4UN324
16MByte
16-megabyte
32bits,
72-pin,
ESA4UN3242
ESA4UN3244
ESA4UN3242A
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Untitled
Abstract: No abstract text available
Text: cP IITSU June 1997 Revision 1.0 data sheet SDC2UV7282D- 67/84/100/125 T-S 16MByte (2Mx 72) CMOS Synchronous DRAM Module - ECC General Description The SDC2UV7282D-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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SDC2UV7282D-
16MByte
16-megabtye
168-pin,
B81117822E-
16MByte
67Mhz
84Mhz
100Mhz
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SYD23244
Abstract: d2045
Text: Description Features The SYD23244 is a plastic 16Mbyte Dynamic RAM Module housed in a JEDEC standard 72 pin SIMM, organised as 4M x 32. • • • • • 72 Pin Single In-line Memory Module. 5 Volt supply ± 5%. 2048 Refresh Cycles. Fast Page Mode Capability.
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SYD23244
SYD23244
16Mbyte
D0-D31
d2045
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Untitled
Abstract: No abstract text available
Text: cP IITSU April 1998 Revision 1.0 data sheet PDC2UL6484H- 102/103 T-S 16MByte (2Mx 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC2UL6484H-(102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M
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PDC2UL6484H-
16MByte
PC/100
16-megabyte
168-pin,
F16822D-
16MByte
PC/66)
100Mhz
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Untitled
Abstract: No abstract text available
Text: <p October 1996 Revision 1.0 HATA fíH F F T - ESA4UN324 2/4 -(60/70)(J/T)(G/S)-S 16MByte (4M x 32) CMOS EDO DRAM Module General Description The ESA4UN324(2/4)-(60/70)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module
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ESA4UN324
16MByte
16-megabyte
32bits,
72-pin,
ESA4UN3242
ESA4UN3244
MB811
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