SB98107
Abstract: No abstract text available
Text: Bussmann 5 x 20mm Ferrule Fuses GMA GMA-V Fast-Acting 4A 5A 6A 2.5A 1A 5.54mm ±.20 3A Time-Current Characteristic Curves–Average Melt 1.25A 2A 38.10mm (±.38) 1.5A Dimensional Data 100 10mm 20mm (±2.0) (±0.5) 21.10mm (±.81) 5.2mm (+0.1/-0.2) 38.10mm
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E75865)
SB98107
SB98107
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BGB420
Abstract: No abstract text available
Text: Preliminary BGB420 Active Biased Transistor BGB420 Features • For high gain low noise amplifiers • Ideal for wideband applications, cellular telephones, cordless telephones, SATTV and high frequency oscillators • Gma=17.5dB at 1.8GHz • Small SOT-343 package
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BGB420
BGB420
OT-343
BFP420.
GPS05605
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gs 3935
Abstract: ZS 1032 BGA428 GPS05604 DCS1800 PCS1900 VPS05604 09035 pgs marking
Text: Preliminary BGA428 High Gain, Low Noise Amplifier BGA428 Features • • • • • • • 4 High gain, GMA=20dB at 1.8GHz Low noise figure, NF=1.4dB at 1.8GHz Prematched Ideal for GSM, DCS1800, PCS1900 Open collector output Typical supply voltage: 2.4-3V
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BGA428
BGA428
DCS1800,
PCS1900
VPS05604
OT-363
EHA07193
OT363
T0527
gs 3935
ZS 1032
GPS05604
DCS1800
PCS1900
VPS05604
09035
pgs marking
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d marking Micro-X
Abstract: BFY450 RF TRANSISTOR NPN MICRO-X
Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz
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BFY450
19dBm
25-Line
Transistor25
QS9000
d marking Micro-X
BFY450
RF TRANSISTOR NPN MICRO-X
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marking K "micro x"
Abstract: MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450
Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB = 19 dbm 1.8 GHz Max. available gain Gma = 16 dB at 1.8 GHz • Hermetically sealed microwave package • Transitor frequency fT = 20 GHz
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BFY450
Transistor25
marking K "micro x"
MICROWAVE TRANSITOR
transistor "micro-x" "marking" 3
GHZ micro-X Package
BFY450
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Untitled
Abstract: No abstract text available
Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Hermetically sealed microwave package Transition Frequency fT = 20 GHz 3 1 2 Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz
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BFY450
19dBm
25-Line
Transistor25
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transistor 1T
Abstract: BFP650 equivalent
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
Jul-01-2003
transistor 1T
BFP650 equivalent
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PDF
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BFP650 noise figure
Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
curr26
Mar-27-2003
BFP650 noise figure
data sheet germanium diode
germanium transistors NPN
npn germanium
BFP650
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093.266
Abstract: pin diagram of bf 494 transistor b 595 transistor schematic PA 1515 transistor transistor BF 502
Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Prelim inary data • For high power amplifiers • Compression point P_1dB = 26.5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency ^ > 1 7 GHz • Gold metalization for high reliability
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OCR Scan
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Q62702-F1721
SCT-595
200mA
093.266
pin diagram of bf 494 transistor
b 595 transistor schematic
PA 1515 transistor
transistor BF 502
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gummel
Abstract: oscilators BFP650
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Oct-13-2003
gummel
oscilators
BFP650
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80mAF
Abstract: 6069 marking
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Aug-16-2004
80mAF
6069 marking
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pin diagram of bf 494 transistor
Abstract: siemens products transistor
Text: SIEMENS SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-idB = 26 5 dBm at 1.8 GHz maxim, available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency f j > 17 GHz • Gold metalization for high reliability
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OCR Scan
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Q62702-F1721
SCT-595
200mA
pin diagram of bf 494 transistor
siemens products transistor
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PDF
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BFP650
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Jan-08-2004
BFP650
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PH marking code
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
PH marking code
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marking r5s
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
Oct-22-2002
marking r5s
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Micro-X marking "K"
Abstract: transistor "micro-x" "marking" 3 micro-X Package MARKING CODE C INFINEON DETAIL
Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Hermetically sealed microwave package Transition Frequency fT = 20 GHz 3 1 2 Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz
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BFY450
19dBm
25-Line
Transistor25
BFY450
Micro-X marking "K"
transistor "micro-x" "marking" 3
micro-X Package MARKING CODE C
INFINEON DETAIL
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pin diagram of bf 494 transistor
Abstract: TA 8825 AN SOT-595 TA 8825 SCT-595 RF POWER marking 556 PIN CONFIGURATION IC ne 555 BF 949 transistor 09326 TRANSISTOR BO 346
Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor Preliminary data 4 • For high power amplifiers 5 • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz 3 2 • Gold metalization for high reliability
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VPW05980
Q62702-F1721
SCT-595
Sep-09-1998
pin diagram of bf 494 transistor
TA 8825 AN
SOT-595
TA 8825
SCT-595
RF POWER marking 556
PIN CONFIGURATION IC ne 555
BF 949 transistor
09326
TRANSISTOR BO 346
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TA 8644
Abstract: BFP690 SCT595 GMA marking
Text: BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5 For medium power amplifiers Maxim. available Gain Gma = 17 dB at 1.8 GHz 3 Gold metallization for high reliability 2 70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP690
VPW05980
SCT595
200mA
Oct-30-2002
TA 8644
BFP690
SCT595
GMA marking
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BFP650
Abstract: BGA420 T-25
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology
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BFP650
OT343
BFP650
BGA420
T-25
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BFP540F
Abstract: No abstract text available
Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1 Gold metallization for high reliability SIEGET 45 - Line TSFP-4 to p v ie w !
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BFP540F
Aug-09-2001
BFP540F
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RBS 3000
Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology
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BFP650
OT343
RBS 3000
BFP650
BFP650 noise figure
BGA420
T-25
RBS INFINEON
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Marking ANs
Abstract: Transistor C 5198 b 514 transistor BFP450
Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability
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OCR Scan
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Q62702-F1590
OT-343
Marking ANs
Transistor C 5198
b 514 transistor
BFP450
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Untitled
Abstract: No abstract text available
Text: SIEGET 45 BFP540F NPN Silicon RF Transistor Preliminary data XYs For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1 Gold metallization for high reliability SIEGET 45 - Line TSFP-4 to p v ie w !
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BFP540F
Dec-07-2001
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093.266
Abstract: 09326 V201200 equivalent transistor K 3531 IC 7479 SPICE 2G6 490 transistor BFP490
Text: SIEGET 25 BFP 490 NPN Silicon RF Transistor 4 For high power amplifiers Compression point P-1dB = 26.5 dBm at 1.8 GHz 5 maxim. available Gain Gma = 8.5 dB at 1.8 GHz Transition frequency fT > 17 GHz Gold metallization for high reliability SIEGET 25 GHz fT - Line
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VPW05980
SCT-595
200mA
Nov-17-2000
093.266
09326
V201200
equivalent transistor K 3531
IC 7479
SPICE 2G6
490 transistor
BFP490
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