marking code 8A
Abstract: marking WM EN6100-4
Text: LESHAN RADIO COMPANY, LTD. LGSMF05CT1G Thyristor Surge Protective Devices MECHANICAL CHARACTERISTICS Features z z z z z z z Molded JEDEC SOT-563 Package Weight 3 milligrams Availble in Lead-Free Nickel-Paladium-Gold Plating Solder Reflow Temperature: Nicker-Paladium-Gold
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LGSMF05CT1G
OT-563
40kilovolts
EIA-481.
SESMF05C-T7
Suffix-T13
SESMF05C-T13.
SESMF05C-P-T-7.
Rev1-9/05
marking code 8A
marking WM
EN6100-4
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 Global Connector Technology Ltd. - BF060: 2.0mm PITCH PIN HEADER, DUAL ROW, THROUGH HOLE, HORIZONTAL 6 5 7 8 A A B B C C D D E FEATURES 特点 EASILY BREAKABLE NOTCHES 易折断驳口 CUSTOM PIN LENGTH, GOLD, SELECTIVE GOLD OR TIN PLATED. STANDOFFS FACILITATE POST SOLDER CLEANING.
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BF060:
BF060
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RG-142 cable
Abstract: No abstract text available
Text: SMA 50 Ohm - Reverse Thread Straight Crimp Type Bulkhead Jack Solder or Crimp Captivated Contact CABLE TYPE RG-316/U, 188, 174, 161 LMR-100, HPF-100, RF-100 GOLD PLATED 142-5303-401 INCHES MILLIMETERS CUSTOMER DRAWINGS AVAILABLE UPON REQUEST NICKEL PLATED
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RG-316/U,
LMR-100,
HPF-100,
RF-100
LMR-100
WW-T-799
QQ-B-613,
MIL-G-45204
QQ-N-290
QQ-B-626
RG-142 cable
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F2201
Abstract: No abstract text available
Text: polyfet rf devices F2201 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2201
F2201
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F2021
Abstract: No abstract text available
Text: polyfet rf devices F2021 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2021
F2021
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F2003
Abstract: F20-03 idq04
Text: polyfet rf devices F2003 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2003
F2003
F20-03
idq04
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PHAP3301
Abstract: PHAP3305c PHAP3307 PHAP3363 2n2646 ujt PHAP3301A MJTP1243 PHAP3302G phap3301c PHAP3305A
Text: MJTP SERIES 6MM THRU-HOLE MTG. TACT SWITCHES SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE. MATERIALS Gold plating available on contacts & terminals - consult factory. FEATURES Numerous single pole-single throw momentary configurations. Excellent tactile feed-back Snap dome .
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UL94HB
MJTP1109
MJTP1119
MJTP1193
MJTP1230
MJTP1232
MJTP1234
MJTP2205
MJTP4102
MJTP5302
PHAP3301
PHAP3305c
PHAP3307
PHAP3363
2n2646 ujt
PHAP3301A
MJTP1243
PHAP3302G
phap3301c
PHAP3305A
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TH 2190 HOT Transistor
Abstract: No abstract text available
Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21180EF
TH 2190 HOT Transistor
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MC400
Abstract: No abstract text available
Text: MC400 Mii MICROCOUPLER, PHOTODARLINGTON OUTPUT OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • Photodarlington output Small size saves real estate Large thick film gold bond pads Element evaluation on request Eliminate ground loops
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MC400
MC400
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1734290-2
Abstract: No abstract text available
Text: D DIM D+0.36 c 7.00 0.20 16.30 RECOMMENDED PCB LAYOUT • B - NOTES: 1. MATERIAL: HOUSING : THERMOPLASTIC HIGH TEMP., UL94V-0, COLOR: BLACK CONTACT : BRASS, THICKNESS=0.25mm. SHELL : PHOSPHOR BRONZE, THECKNESS=0.40m m. 2. FINISH : CONTACT : 3 0 u ” MIN. GOLD PLATED ON CONTACT AREA,
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UL94V-0,
23--DEC--
25DEC
1734290-2
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low noise pseudomorphic
Abstract: No abstract text available
Text: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE
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Untitled
Abstract: No abstract text available
Text: 50 Ohm SMB PC Mount Straight Jack Receptacle INCHES MILLIMETERS CUSTOMER DRAWINGS AVAILABLE UPON REQUEST Mounting hole layout "A" GOLD PLATED NICKEL PLATED .155 (3.94) 131-3701-201 131-3701-206 Emerson Network Power Connectivity Solutions 299 Johnson Avenue SW, Waseca, MN 56093 • 800 -247- 8256 • +1 (507) 833-8822 • www.EmersonConnectivity.com
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RG-178
QQ-N-290
QQ-B-626
QQ-B-750,
MIL-G-45204
QQ-N-290.
MIL-C-39012
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Upscreening
Abstract: ACT-5271SC-F10-M21C AMPF-128MDA coil gold detector military mcm cpu
Text: Custom Hybrid, MCM, Module, Box Assembly and Testing Services Fact Sheet June 2012 www.aeroflex.com/EMS INTRODUCTION PRODUCTION CAPABILITIES Aeroflex Plainview, a supplier of standard products and custom microelectronic solutions offers Space and Military
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MIL-PRF-38534
Upscreening
ACT-5271SC-F10-M21C
AMPF-128MDA
coil gold detector
military mcm cpu
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PC378
Abstract: No abstract text available
Text: PC378 Low Profile Minature PCB Power Relay FEATURES 8 Amp contact capacity 1 Form A and 1 form C contact forms available 5 KV dielectric strength between coil and contacts 8 mm creepage distance between coil and contacts Low profile design, .48 in. tall Meets UL 873 spacing
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PC378
E86876
PC378
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THM408
Abstract: THM324000
Text: Dynamic RAM Module Capacity Type No. Organiza tion 8 M B it TH81070CS/CL-50/AS/AL-60/70/80 1M x8 B M B it THM91070AS/AL-60/70/80 1M x 9 1 6 M B it THM 161000CSG-50/ASG-6CV7CV80 1 M x 16 1 8 M B it TH M 181000ASG-60/7CV80 1 M x 18 THM84000CS/CSG/CL-5Q/AS/ASG/AL-6Q/70/80
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TH81070CS/CL-50/AS/AL-60/70/80
THM91070AS/AL-60/70/80
161000CSG-50/ASG-6CV7CV80
181000ASG-60/7CV80
THM84000CS/CSG/CL-5Q/AS/ASG/AL-6Q/70/80
y70/80
84000AL
THM321090CS-50/AS-60/70/80
THM331OOOAS-60/70/80
THM94000CS/CSG/CL-5Q/AS/ASG/AL-6Q/70/80
THM408
THM324000
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H40P
Abstract: NN12 P35-5136-000-200 MARCONI power
Text: P35-5136-000-200 HEMT MMIC POWER AMPLIFIER, 28GHz Features • • • Gain; 15dB typical @ 28GHz P-1dB; 29dBm typical @ 28GHz 0.20 µm pHEMT technology Description The P35-5136-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers
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P35-5136-000-200
28GHz
29dBm
P35-5136-000-200
28GHz
463/SM/02574/000
H40P
NN12
MARCONI power
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T100
Abstract: TPSD157
Text: TPS Series Low ESR TPS surface mount products have inherently low ESR equivalent series resistance and are capable of higher ripple current handling, producing lower ripple voltages, less power and heat dissipation than standard product for the most efficient use of
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ODT-880W
Abstract: aoz4060sh GaAlAs detector
Text: HIGH STABILITY GaAlAs IR EMITTERS FEATURES .018 DIA. 3 PLCS. ON 100 DIA. PIN CIRCLE .006 MAX GLASS ABOVE CAP TOP EDGE ODT-880W • Monitoring diode for power output stability DETECTOR CATHODE COMMON ANODE • Monolithic construction • Low unit price compared to adding a separate
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ODT-880W
100mA
190mW
400Hz)
10sec)
ODT-880W
aoz4060sh
GaAlAs detector
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1417 transistor
Abstract: max 1417 1417-6A
Text: 1417-6A 6 Watts, 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION The 1417-6A is an internally matched, COMMON BASE transistor capable of providing 6 watts of CW RF Output power across the 1400-1700 MHz band. This transistor is specifically designed for telemetry and telecommunications
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417-6A
417-6A
1417 transistor
max 1417
1417-6A
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A12 diode
Abstract: diode 0450
Text: TESDQ5V0ULC Ultra Low Capacitance ESD Protection Diode Small Signal Diode 0402 DFN1006 Features Cell Phone Handsets and Accessories Microprocessor based equipment Personal Digital Assisitants(PDA's) Notebooks,Desktops,and Servers Pb free version, RoHS compliant, and Halogen free
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DFN1006)
MIL-STD-750,
C/10s
IEC61000-4-2
IEC61000-4-4
5/50s)
8/20s
A12 diode
diode 0450
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microwave amplifier 2.4 ghz 10 watts
Abstract: 2223 2223-9A transistor Common Base amplifier
Text: 2223-9A 9 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz CASE OUTLINE 55AW, STYLE 1 GENERAL DESCRIPTION The 2223-9 is a COMMON BASE transistor capable of providing 9 Watts of Class C, RF output power over the band 2200 - 2300 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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223-9A
160mA
microwave amplifier 2.4 ghz 10 watts
2223
2223-9A
transistor Common Base amplifier
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TS4148C
Abstract: A12 smd
Text: TS4148C RCG 200mW High Speed SMD Switching Diode Small Signal Diode 0603 A B Features Designed for mounting on small surface. Extremely thin/leadless package C High mounting capability,strong surage with stand, high reliability. D Pb free version and RoHS compliant
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TS4148C
200mW
MIL-STD-750,
C/10s
004gram
A12 smd
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RG-316 cable specifications
Abstract: No abstract text available
Text: SMA Non-Magnetic RF Connectors For Flexible Cable INCHES MILLIMETERS CUSTOMER DRAWINGS AVAILABLE UPON REQUEST Right Angle Crimp Type Plug - Captivated Contact CABLE TYPE RG-316/u, 188, 174 VSWR & FREQ. RANGE 1.15 + .03f (GHz) 0-12.4 GHz SMA Crimp Type Right Angle Plugs
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RG-316/u,
RG-316
RG-58/u,
LMR-100
RG-316
RG-58
MIL-C-39012)
1650C
MIL-STD-202,
RG-316 cable specifications
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NN12
Abstract: P35-4110-0
Text: P35-4110-0 MONOLITHIC BROADBAND AMPLIFIER, 1 - 6GHz Features • • • • • Broadband, cascadable gain block Flat Frequency response with direct gain control High output power capability Input and output matched to 50Ω No external components required
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P35-4110-0
P35-4110
462/SM/00509/200
NN12
P35-4110-0
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