LR14385
Abstract: RT78625 siemens relay 24vdc RTE24024F RT16016 RPMT00A0 8A DPDT RELAY 220 latching RELAY DPDT 12V 12v 16A diagram RY16041
Text: RT series Miniature Printed Circuit Board Relays, Sockets and Accessories RT series DC Coil 16 Amp PC Board Miniature Relay Meets VDE 10mm Spacing, 5KV Dielectric File E22575 File LR15734 NR 6106 Features Coil Data @ 25°C • SPST through DPDT contact arrangements.
|
Original
|
E22575
LR15734
400mW.
48VDC.
500VDC
RT16016
RY16041
LR14385
RT78625
siemens relay 24vdc
RTE24024F
RT16016
RPMT00A0
8A DPDT RELAY 220
latching RELAY DPDT 12V
12v 16A diagram
RY16041
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94607B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
|
Original
|
94607B
IRGB4B60KD1
IRGS4B60KD1
IRGSL4B60KD1
O-220
IRGB4B60KD1
O-262
AN-994.
|
PDF
|
AN-994
Abstract: C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
|
Original
|
4799A
IRGB30B60K
IRGS30B60K
IRGSL30B60K
O-220AB
O-262
O-220AB
AN-994
C-150
IRGB30B60K
IRGS30B60K
IRGSL30B60K
|
PDF
|
IRFB16N50K
Abstract: No abstract text available
Text: PD - 95855 IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive
|
Original
|
IRFB16N50K
O-220AB
O-220AB
IRFB16N50K
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
|
Original
|
4799A
IRGB30B60K
IRGS30B60K
IRGSL30B60K
O-220AB
O-262
AN-994.
|
PDF
|
irf 1830
Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
|
Original
|
4799A
IRGB30B60K
IRGS30B60K
IRGSL30B60K
O-220AB
O-262
AN-994.
irf 1830
1085 CT
600v 30a IGBT
TRANSISTOR D 1785
irf 44 n
AN-994
C-150
IRGB30B60K
IRGS30B60K
IRGSL30B60K
|
PDF
|
3707S
Abstract: "current regulator" IRF3707PBF 4.5v to 100v input regulator
Text: PD - 94813 IRF3707PbF IRF3707S IRF3707L SMPS MOSFET Applications High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free only the TO-220AB version is
|
Original
|
O-220AB
IRF3707PbF
IRF3707S
IRF3707L
O-262
EIA-418.
3707S
"current regulator"
4.5v to 100v input regulator
|
PDF
|
3704s
Abstract: IRF3704L 4.5V TO 100V INPUT REGULATOR
Text: PD - 94814 IRF3704PbF IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free only the TO-220AB version is
|
Original
|
O-220AB
IRF3704PbF
IRF3704S
IRF3704L
IRF3704S
IRF3704PbF
O-262
EIA-418.
3704s
IRF3704L
4.5V TO 100V INPUT REGULATOR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
|
Original
|
4927A
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
|
PDF
|
diode gp 429
Abstract: diode gp 421 a6t diode diode gp 634 marking aag AN1001 AN-994 IRFB41N15D gp 001 diode IRFS41N15D
Text: PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
|
Original
|
4927A
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
diode gp 429
diode gp 421
a6t diode
diode gp 634
marking aag
AN1001
AN-994
gp 001 diode
IRFS41N15D
|
PDF
|
NTE906
Abstract: J307 I9 transistor
Text: NTE906 Integrated Circuit Dual, High Frequency, Differential Amplifier Description: The NTE906 is an integrated circuit in a 12–Lead TO5 type package consisting of two independent differential amplifiers with associated constant–current transistors on a common monolithic substrate. The six transistors which comprise the amplifiers are general–purpose devices which exhibit
|
Original
|
NTE906
NTE906
500MHz.
200MHz,
J307
I9 transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
|
Original
|
4927A
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
|
PDF
|
IRF3710S
Abstract: IRF3710L IRF 450 MOSFET AN-994 IRF3710
Text: PD - 94201A IRF3710S IRF3710L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description
|
Original
|
4201A
IRF3710S
IRF3710L
EIA-418.
IRF3710S
IRF3710L
IRF 450 MOSFET
AN-994
IRF3710
|
PDF
|
IRL3713S
Abstract: No abstract text available
Text: PD - 97011A IRL3713PbF IRL3713SPbF IRL3713LPbF SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free
|
Original
|
7011A
IRL3713PbF
IRL3713SPbF
IRL3713LPbF
O-220AB
IRL3713PbF
IRL3713SPbF
O-262
O-220A
IRL3713S
|
PDF
|
|
|
AN1001
Abstract: AN-994 IRFS52N15D IRFSL52N15D
Text: PD - 94815 IRFB52N15DPbF IRFS52N15D IRFSL52N15D SMPS MOSFET Applications l l High frequency DC-DC converters Lead-Free only the TO-220AB version is currently available in a lead-free configuration Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
|
Original
|
IRFB52N15DPbF
IRFS52N15D
IRFSL52N15D
O-220AB
AN1001)
O-220AB
IRFB52N15DPbF
O-262
AN1001
AN-994
IRFS52N15D
IRFSL52N15D
|
PDF
|
AN-994
Abstract: IRFZ46N IRFZ46NL IRFZ46NS to262 pcb footprint
Text: PD - 91305C Advanced Process Technology l Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ46NS IRFZ46NL HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω
|
Original
|
91305C
IRFZ46NS)
IRFZ46NL)
IRFZ46NS
IRFZ46NL
EIA-418.
AN-994
IRFZ46N
IRFZ46NL
IRFZ46NS
to262 pcb footprint
|
PDF
|
IRFZ46NL
Abstract: IGBT GS AN-994 IRFZ46N IRFZ46NS Voltage Regulator 5V 10V for IRFZ46N
Text: PD - 91305C Advanced Process Technology l Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ46NS IRFZ46NL HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω
|
Original
|
91305C
IRFZ46NS)
IRFZ46NL)
IRFZ46NS
IRFZ46NL
EIA-418.
IRFZ46NL
IGBT GS
AN-994
IRFZ46N
IRFZ46NS
Voltage Regulator 5V 10V
for IRFZ46N
|
PDF
|
IRF2804
Abstract: MOSFET driver 175C
Text: PD - 94436B IRF2804 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.3mΩ
|
Original
|
94436B
IRF2804
O-220AB
IRF2804
MOSFET driver 175C
|
PDF
|
RN60C
Abstract: LT1124 LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 190C
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1124 dual and LT1125 quad are high performance op amps that offer higher gain, slew rate and bandwidth than the industry standard OP-27 and competing OP-270/
|
Original
|
LT1124/LT1125
LT1125
OP-27
OP-270/
OP-470
LT1124/LT1125
OP-27;
OP-270/OP-470.
112dB
116dB
RN60C
LT1124
LT1124C
LT1125C
OP-270
190C
|
PDF
|
LT1124
Abstract: LT1124C LT1125 LT1125C OP-27 OP-270 OP-470 strain gauge amplifier 102 RN60C L3540
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps FEATURES DESCRIPTION n The LT 1124 dual and LT1125 quad are high performance op amps that offer higher gain, slew rate and bandwidth than the industry standard OP-27 and competing OP-270/ OP-470 op amps. In addition, the LT1124/LT1125 have
|
Original
|
LT1124/LT1125
LT1125
OP-27
OP-270/
OP-470
LT1124/LT1125
OP-27;
OP-270/OP-470.
112dB
116dB
LT1124
LT1124C
LT1125C
OP-270
strain gauge amplifier 102
RN60C
L3540
|
PDF
|
TO-220AB transistor package
Abstract: C-150 IRGB8B60K IRGS8B60K IRGSL8B60K
Text: PD - 94545B IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 8.0A, TC=100°C
|
Original
|
94545B
IRGB8B60K
IRGS8B60K
IRGSL8B60K
O-220AB
O-262
O-220AB
TO-220AB transistor package
C-150
IRGB8B60K
IRGS8B60K
IRGSL8B60K
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps Description Features 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max n Slew Rate: 4.5V/µs Typ n Gain-Bandwidth Product: 12.5MHz Typ n Offset Voltage, Prime Grade: 70µV Max Low Grade: 100µV Max
|
Original
|
LT1124/LT1125
112dB
116dB
LT1125
OP-27
OP-470
LT1124/LT1125
OP-27;
250pA
LT1113
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTION FEATURES n n n n n n n n n 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max Slew Rate: 4.5V/ s Typ Gain-Bandwidth Product: 12.5MHz Typ Offset Voltage, Prime Grade: 70μV Max
|
Original
|
LT1124/LT1125
112dB
116dB
LT1125
OP-27
OP-270/
OP-470
LT1124/LT1125
OP-271112/LT1114
250pA
|
PDF
|
RN60C
Abstract: No abstract text available
Text: LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps DESCRIPTION FEATURES 100% Tested Low Voltage Noise: 2.7nV/√Hz Typ 4.2nV/√Hz Max n Slew Rate: 4.5V/µs Typ n Gain-Bandwidth Product: 12.5MHz Typ n Offset Voltage, Prime Grade: 70µV Max Low Grade: 100µV Max
|
Original
|
112dB
116dB
LT1124/LT1125
LT1125
OP-27
OP270/
OP-470
OP-27;
OP-270/OP-470.
RN60C
|
PDF
|
