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    IRGB8B60K Search Results

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    IRGB8B60K Price and Stock

    Infineon Technologies AG IRGB8B60KPBF

    IGBT 600V 28A 167W TO220AB
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    DigiKey IRGB8B60KPBF Tube
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    RS IRGB8B60KPBF Bulk 300
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    International Rectifier IRGB8B60KPBF

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    Bristol Electronics IRGB8B60KPBF 100
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    Quest Components IRGB8B60KPBF 80
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    International Rectifier IRGB8B60K

    INSULATED GATE BIPOLAR TRANSISTOR, 28A I(C), 600V V(BR)CES, N-CHANNEL, TO-220AB
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    Quest Components IRGB8B60K 4,562
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    IRGB8B60K 46
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    IRGB8B60K Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGB8B60K International Rectifier 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package; A IRGB8B60K with Standard Packaging Original PDF
    IRGB8B60K International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGB8B60K International Rectifier Insulated Gate Bipolar Transistor Original PDF
    IRGB8B60KPBF International Rectifier 600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package; Similar to IRGB8B60K with Lead Free Packaging Original PDF
    IRGB8B60KPBF International Rectifier Original PDF

    IRGB8B60K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 95645 IRGB8B60KPbF IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features C • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •TO-220 is available in PbF as a Lead-Free.


    Original     		PDF O-220 IRGB8B60KPbF IRGS8B60K IRGSL8B60K O-220AB IRGS8B60K O-262

    TO-220AB transistor package

    Abstract: C-150 IRGB8B60K IRGS8B60K IRGSL8B60K
    Text: PD - 94545B IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 8.0A, TC=100°C


    Original     		PDF 94545B IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB TO-220AB transistor package C-150 IRGB8B60K IRGS8B60K IRGSL8B60K

    C-150

    Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


    Original     		PDF 94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994. C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K

    AN-994

    Abstract: C-150 HF03D060ACE
    Text: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • VCES = 600V C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB O-262 IRGB8B60KPbF IRGS8B60KPbF AN-994. AN-994 C-150 HF03D060ACE

    AN-994

    Abstract: C-150 IRGS8B60K IRGSL8B60K
    Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.


    Original     		PDF 5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K AN-994. AN-994 C-150 IRGS8B60K IRGSL8B60K

    Untitled

    Abstract: No abstract text available
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


    Original     		PDF 94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994.

    C-150

    Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


    Original     		PDF 94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH

    Untitled

    Abstract: No abstract text available
    Text: PD - 94545 IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB AN-994.

    AN-994

    Abstract: C-150 IRGS8B60K IRGSL8B60K Mbl transistor
    Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.


    Original     		PDF 5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K O-220AB AN-994 C-150 IRGS8B60K IRGSL8B60K Mbl transistor

    Untitled

    Abstract: No abstract text available
    Text: PD - 94545A IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


    Original     		PDF 4545A IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.


    Original     		PDF 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB O-262 IRGB8B60KPbF IRGS8B60KPbF AN-994.

    C-150

    Abstract: IRGS8B60K IRGSL8B60K
    Text: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.


    Original     		PDF 5645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF O-220AB IRGB8B60KPbF IRGS8B60K O-262 IRGSL8B60K IRGB/S/SL8B60KPbF C-150 IRGS8B60K IRGSL8B60K

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter