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    GP14N60 Search Results

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    GP14N60 Price and Stock

    Rochester Electronics LLC MGP14N60E

    IGBT, 18A, 600V, N-CHANNEL
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    DigiKey MGP14N60E Bulk 5,908 592
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    • 1000 $0.51
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    STMicroelectronics STGP14N60D

    IGBT 600V 25A 95W TO220
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    DigiKey STGP14N60D Tube 1,000
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    • 1000 $1.14098
    • 10000 $1.14098
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    onsemi MGP14N60E

    Insulated Gate Bipolar Transistor, 18A, 600V, N-Channel, TO-220AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MGP14N60E 5,908 1
    • 1 $0.4875
    • 10 $0.4875
    • 100 $0.4583
    • 1000 $0.4144
    • 10000 $0.4144
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    GP14N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GP14N60

    Abstract: STGP14N60D GF14N60D C9533 GP14N60D STGF14N60D
    Text: STGF14N60D GP14N60D 14 A - 600 V - short circuit rugged IGBT Preliminary Data Features • Low on-voltage drop VCE(sat ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution


    Original     		PDF STGF14N60D STGP14N60D O-220FP O-220 GP14N60 STGP14N60D GF14N60D C9533 GP14N60D STGF14N60D

    GP14N60

    Abstract: No abstract text available
    Text: STGF14N60D GP14N60D 14 A - 600 V - short circuit rugged IGBT Preliminary Data Features • Low on-voltage drop VCE(sat ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Tight parameter distribution


    Original     		PDF STGF14N60D STGP14N60D O-220FP O-220 GP14N60

    ES600

    Abstract: P14N60
    Text: MOTOROLA O rder this docum ent by M G P14N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP14N60E In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


    OCR Scan     		PDF P14N60E/D ES600 P14N60

    GP14N60E

    Abstract: GP14N60
    Text: M OTOROLA Order this document by GP14N60E/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet GP14N60E Insulated G ate Bipolar TVansistor N-Channel Enhancement Mode Silicon Gate IGBT IN TO-220 14 A @ 90°C 18 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED


    OCR Scan     		PDF MGP14N60E/D 44stered X34713-0 2110B GP14N60E GP14N60