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    GP4N60 Search Results

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    GP4N60 Price and Stock

    Rochester Electronics LLC MGP4N60E

    IGBT, 6A, 600V, N-CHANNEL
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    DigiKey MGP4N60E Bulk 503
    • 1 -
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    • 1000 $0.6
    • 10000 $0.6
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    Rochester Electronics LLC MGP4N60ED

    IGBT, 6A, 600V, N-CHANNEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MGP4N60ED Bulk 683
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.44
    • 10000 $0.44
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    onsemi MGP4N60ED

    Insulated Gate Bipolar Transistor, 6A, 600V, N-Channel, TO-220AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MGP4N60ED 3,631 1
    • 1 $0.4225
    • 10 $0.4225
    • 100 $0.3972
    • 1000 $0.3591
    • 10000 $0.3591
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    onsemi MGP4N60E

    Insulated Gate Bipolar Transistor, 6A, 600V, N-Channel, TO-220AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MGP4N60E 2,810 1
    • 1 $0.5742
    • 10 $0.5742
    • 100 $0.5397
    • 1000 $0.4881
    • 10000 $0.4881
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    GP4N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4n60e

    Abstract: No abstract text available
    Text: M O TO RO LA O rder this docum ent by M GP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GP4N60E In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


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    GP4N60E/D 4n60e PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by M GP4N60E/D Designer's Data Sheet I n s u l a t e d Gate B ip o lar T r a n s i s t o r GP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced


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    GP4N60E/D MGP4N60E 21A-06 O-220AB PDF

    GP4N60

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by GP4N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GP4N60ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 4.0 A @ 90°C 6.0 A @ 25°C


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    MGP4N60ED/D GP4N60 PDF