Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM188B11H102KA01p 0603, B, 1000pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging
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GRM188B11H102KA01p
1000pF,
50Vdc)
180mm
330mm
1000pF
50Vdc
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GRM188B11H
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM188B11H102KA01p 0603, B, 1000pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging
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GRM188B11H102KA01p
1000pF,
50Vdc)
180mm
330mm
1000pF
50Vdc
GRM188B11H
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors Data Sheet Monolithic Ceramic Capacitors GRM188B11H102KA01p 0603, B, 1000pF, 50Vdc p: packaging code RoHS regulation conformity parts g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.6mm±0.1mm Code Packaging
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GRM188B11H102KA01p
1000pF,
50Vdc)
180mm
330mm
1000pF
50Vdc
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Untitled
Abstract: No abstract text available
Text: Capacitors > Monolithic Ceramic Capacitors > Soldering Electrode GRM15/18/21/31 Data Sheet Monolithic Ceramic Capacitors GRM188B11H102KA01p 0603, B, 1000pF, 50Vdc p: packaging code g e T e L W (in mm) • Dimensions ■ Packaging Length L 1.60mm±0.10mm
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GRM15/18/21/31
GRM188B11H102KA01p
1000pF,
50Vdc)
180mm
330mm
1000pF
50Vdc
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Untitled
Abstract: No abstract text available
Text: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency
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EGN21C105I2D
14GHz
14GHz
25deg
/-10MHz
45dBm
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EGN26C070I2D
Abstract: No abstract text available
Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
25deg
/-10MHz
EGN26C070I2D
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GRM42-6CH
Abstract: GRM39F104Z25 GRM1885C1H100JA01B GRM39F104Z GRM188R60J105KA01B grm219b31a GRM39CH GRM40F104Z50 GRM40X7R104K50 GRM188F11C105Z
Text: Part Number Search:Result head Home head North America Europe head MURATA Search Engine >Part Number Search >Result 695 Items Found Seq No Previous Part Number Global Part Number Primary Secondary 1 GHM1030R101K1K GRM31AR33A101KY01D Capacitors Monolithic Ceramic Medium-voltage
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GHM1030R101K1K
GHM1030R101K630
GHM1030R102K630
GHM1030R151K1K
GHM1030R151K630
GHM1030R221K1K
GHM1030R221K630
GHM1030R331K1K
GHM1030R331K630
GHM1030R470K1K
GRM42-6CH
GRM39F104Z25
GRM1885C1H100JA01B
GRM39F104Z
GRM188R60J105KA01B
grm219b31a
GRM39CH
GRM40F104Z50
GRM40X7R104K50
GRM188F11C105Z
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B4846
Abstract: S21 Package GRM188B11H102KA01D CS3376C
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C105I2D
/-10MHz
45dBm
/-10MHz
B4846
S21 Package
GRM188B11H102KA01D
CS3376C
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GRM2162C1H180JZ01D
Abstract: RD07MUS2B GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-105-A Date : 22th Dec. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=380-430MHz,Vdd=7.2V
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AN-UHF-105-A
RD07MUS2B
380-430MHz
RD07MUS2B:
086ZE-G"
380MHz,
405MHz,
430MHz,
250mA
18ksps,
GRM2162C1H180JZ01D
GRM2162C1H101JA01D
GRM2162C1H120JZ01D
Single-Stage amplifier
GRM2162C1H270JZ01D
GRM2162C1H300JZ01D
GRM2162C1H560JZ01D
murata 897 Mhz
AN-UHF-105-A
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GRM0222C1C330GD05
Abstract: No abstract text available
Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.
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GRM55DR72E334KW01#
GRM55DR72E474KW01#
GRM55DR72E684KW01#
GRM55DR72E105KW01#
GRM55DR72D334KW01#
GRM55DR72D474KW01#
GRM55DR72D684KW01#
200Vdc
250Vdc
GRM55DR72D105KW01#
GRM0222C1C330GD05
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6-10 Ghz RF Power 100w amplifier
Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
/-10MHz
6-10 Ghz RF Power 100w amplifier
2S110
GSC356-HYB2300
GRM55ER72A475K
EGN26C070I2D
GRM188B11H102KA01D
60Ghz
GaN amplifier 100W
GRM188B31H104KA92D
JESD22-A114
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CS3376C
Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN35C070I2D
43dBm
/-10MHz
CS3376C
GRM188B11H102KA01D
ATC100B100JW500
risho
GRM188B31H104KA92D
EGN35C070I2D
GSC364-HYB3500
JESD22-A114
MCR03EZPJ101
MCR18EZPJ101
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BD5452A
Abstract: BD5452AMUV marking 2P diode 2PIN LCC3225T2R2MR VQFN032V5050
Text: BD5452AMUV Datasheet Middle Power Class-D Speaker Amplifier series 15W+15W Class D Speaker Amplifier for Digital Input BD5452AMUV ●Applications Flat Panel TVs LCD, Plasma , Home Audio, Desktop PC, Amusement equipments, Electronic Music equipments, etc.
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BD5452AMUV
BD5452AMUV
BD5452A
marking 2P diode 2PIN
LCC3225T2R2MR
VQFN032V5050
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GRM188B11H103
Abstract: GRM188F11A grm219b11 GRM188F11E104Z F1R3B GRP155R GRP155B11H GRM188F11A105 GRM188R11H471KA01 GRM188B11E104KA01
Text: Capacitors Monolithic Ceramic Capacitors GR_B1/F1/R3 B/F/R High Dielectric Constant Type 10/16/25/50V g e T e L Part Number GRP155 GRM155 GRM188* GRM216 GRM219 GRM21B GRM319 GRM31M GRM31C L W Dimensions (mm) W T e g min. 1.0 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 to 0.3
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10/16/25/50V
GRP155
GRM155
GRM188*
GRM216
GRM219
GRM21B
GRM319
GRM31M
GRM31C
GRM188B11H103
GRM188F11A
grm219b11
GRM188F11E104Z
F1R3B
GRP155R
GRP155B11H
GRM188F11A105
GRM188R11H471KA01
GRM188B11E104KA01
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bd5444
Abstract: RUBYCON CAPACITOR 220M GRM188B11H102KA01 TOKO A7503AY BD5444EFV
Text: Middle Power Class-D Speaker Amplifiers Analog Input / Single End Output Class-D Speaker Amplifier BD5444EFV No.11075ECT15 ●Overview BD5444EFV is a Analog input type Class D Speaker Amplifier designed for Flat-panel TVs in particular for space-saving and low-power consumption, delivers an output power of 20W+20W. This IC employs state-of-the-art Bipolar, CMOS, and
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BD5444EFV
11075ECT15
BD5444EFV
R1120A
bd5444
RUBYCON CAPACITOR 220M
GRM188B11H102KA01
TOKO A7503AY
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toshiba lcd power board schematic
Abstract: led lcd inverter schematic alps touch screen S5U13U11P00C100 GRM155B31C104K s1d13u11 toshiba lcd inverter pinout GRM188F11C105ZA01 CCFL inverter pinout toshiba 20X2 LCD DISPLAY PINOUT toshiba
Text: S1D13U11 Display Controller S5U13U11 Evaluation Board User Manual SEIKO EPSON CORPORATION Rev. 1.1 Evaluation board/kit and Development tool important notice 1. This evaluation board/kit or development tool is designed for use for engineering evaluation, demonstration, or development purposes only. Do not use it for other purpose. It is not intended to meet the requirement of design for finished product.
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S1D13U11
S5U13U11
X96A-G-001-01
toshiba lcd power board schematic
led lcd inverter schematic
alps touch screen
S5U13U11P00C100
GRM155B31C104K
toshiba lcd inverter pinout
GRM188F11C105ZA01
CCFL inverter pinout toshiba
20X2 LCD DISPLAY PINOUT toshiba
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3072 rohm
Abstract: No abstract text available
Text: Datasheet Middle Power Class-D Speaker Amplifier series 15W+15W Class D Speaker Amplifier for Digital Input BD5452AMUV ●Applications Flat Panel TVs LCD, Plasma , Home Audio, Desktop PC, Amusement equipments, Electronic Music equipments, etc. ●Package(s)
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BD5452AMUV
BD5452AMUV
3072 rohm
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2S110
Abstract: GRM188B11H102KA01D
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
/-10MHz
/-10MHz
2S110
GRM188B11H102KA01D
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EKZE101
Abstract: No abstract text available
Text: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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14GHz
EGN21C210I2D
/-10MHz
48dBm
/-10MHz
EKZE101
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Untitled
Abstract: No abstract text available
Text: Datasheet Middle Power Class-D Speaker Amplifier series 15W+15W Class D Speaker Amplifier for Digital Input BD5452AMUV ●Applications Flat Panel TVs LCD, Plasma , Home Audio, Desktop PC, Amusement equipments, Electronic Music equipments, etc. ●Package(s)
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BD5452AMUV
VQFN032V5050
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GRM188F11E104Z
Abstract: GRM155B11E103K GRM188F11E104ZA01 GRM188F11H GRM219F11E105ZA01 GRM188B11H103 GRM188F11E104 GRM188B11H103KA01 GRM155F11H103ZA01 GRM155F11C
Text: Capacitors Monolithic Ceramic Capacitors GR_B1/F1/R3 B/F/R High Dielectric Constant Type 10/16/25/50V g e T e L Part Number GRM155 GRM188* GRM216 GRM219 GRM21B GRM319 GRM31M GRM31C W Dimensions (mm) L W T e 1.0 ±0.05 0.5 ±0.05 0.5 ±0.05 0.15 to 0.3 1.6 ±0.1 0.8 ±0.1 0.8 ±0.1 0.2 to 0.5
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10/16/25/50V
GRM155
GRM188*
GRM216
GRM219
GRM21B
GRM319
GRM31M
GRM31C
GRM033B11C101KD01
GRM188F11E104Z
GRM155B11E103K
GRM188F11E104ZA01
GRM188F11H
GRM219F11E105ZA01
GRM188B11H103
GRM188F11E104
GRM188B11H103KA01
GRM155F11H103ZA01
GRM155F11C
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EKZE101
Abstract: GaN amplifier 100W GRM55ER72A475K grm188b11h102ka01d 105w ATC100B Soshin JESD22-A114 MCR18 TZY2Z010A001
Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN21C105I2D
14GHz
14GHz
/-10MHz
45dBm
EKZE101
GaN amplifier 100W
GRM55ER72A475K
grm188b11h102ka01d
105w
ATC100B
Soshin
JESD22-A114
MCR18
TZY2Z010A001
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1A05A
Abstract: BD9140MUV
Text: TECHNICAL NOTE Single-chip built-in FET type Switching Regulator Series High Efficiency Step-down Switching Regulator BD9141MUV ●Description ROHM’s high efficiency step-down switching regulator BD9141MUV is a power supply designed to produce a low voltage
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BD9141MUV
BD9141MUV
VQFN020V4040
2500pcs
1A05A
BD9140MUV
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1A05A
Abstract: D9141 CM05B BD9140MUV d914 Equivalence transistor RLF7030T-4R7M3R4 VQFN020V4040 CM32X5R226M25A
Text: TECHNICAL NOTE Single-chip built-in FET type Switching Regulator Series High Efficiency Step-down Switching Regulator BD9141MUV ●Description ROHM’s high efficiency step-down switching regulator BD9141MUV is a power supply designed to produce a low voltage
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BD9141MUV
BD9141MUV
VQFN020V4040
2500pcs
08T245A
1A05A
D9141
CM05B
BD9140MUV
d914
Equivalence transistor
RLF7030T-4R7M3R4
VQFN020V4040
CM32X5R226M25A
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