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    GS8161E36 Price and Stock

    GSI Technology GS8161E36DGD-400

    SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 36 4ns/2.5ns 165-Pin FBGA - Bulk (Alt: GS8161E36DGD-400)
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    Avnet Americas GS8161E36DGD-400 Bulk 24 Weeks 144
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    • 1000 $33.75
    • 10000 $32.625
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    GSI Technology GS8161E36DGT-250V

    SRAM Chip Sync Quad 1.8V/2.5V 18M-Bit 512K x 36 5.5ns/3ns 100-Pin TQFP - Bulk (Alt: GS8161E36DGT-250V)
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    • 1000 $29.841
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    GSI Technology GS8161E36DD-250IV

    SRAM Chip Sync Quad 1.8V/2.5V 18M-Bit 512K x 36 5.5ns/3ns 165-Pin FBGA - Bulk (Alt: GS8161E36DD-250IV)
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    GSI Technology GS8161E36DGT-333V

    SRAM Chip Sync Quad 1.8V/2.5V 18M-Bit 512K x 36 5ns/3ns 100-Pin TQFP - Bulk (Alt: GS8161E36DGT-333V)
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    GSI Technology GS8161E36DGT-400I

    SRAM Chip Sync Quad 2.5V/3.3V 18M-Bit 512K x 36 4ns 100-Pin TQFP Bulk - Bulk (Alt: GS8161E36DGT-400I)
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    • 1000 $38.019
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    GS8161E36 Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GS8161E36 GIGA 18Mb Burst SRAMs Original PDF
    GS8161E36AD-150 GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E36AD-150I GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E36AD-200 GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E36AD-200I GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E36AD-250 GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E36AD-250I GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E36AD-300 GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E36AD-300I GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E36AT-150 GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E36AT-150I GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E36AT-200 GIGA 512K x 36 18Mb Sync Burst SRAM Original PDF
    GS8161E36AT-200 GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E36AT-200I GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E36AT-200I GIGA 512K x 36 18Mb Sync Burst SRAM Original PDF
    GS8161E36AT-200IT GIGA 512K x 36 18Mb Sync Burst SRAM Original PDF
    GS8161E36AT-225 GIGA 512K x 36 18Mb Sync Burst SRAM Original PDF
    GS8161E36AT-225T GIGA 512K x 36 18Mb Sync Burst SRAM Original PDF
    GS8161E36AT-250 GIGA 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Original PDF
    GS8161E36AT-250 GIGA 512K x 36 18Mb Sync Burst SRAM Original PDF

    GS8161E36 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GS8161E36BGD-250

    Abstract: No abstract text available
    Text: Preliminary GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


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    GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead 51ntation GS8161E36BGD-250 PDF

    GS8161E18AT-300

    Abstract: 36AD Boundary Scan JTAG Logic
    Text: Preliminary GS8161E18A T/D /GS8161E32A(D)/GS8161E36A(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


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    GS8161E18A /GS8161E32A /GS8161E36A 100-Pin 165-Bump 100-lead 8161E18A GS8161ExxA GS8161E18AT-300 36AD Boundary Scan JTAG Logic PDF

    Untitled

    Abstract: No abstract text available
    Text: GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs Features Linear Burst Order (LBO) input. The Burst function need not


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    GS8161E18D /GS8161E32D /GS8161E36D 100-Pin 165-Bump 8161ExxD PDF

    GS8161E18B

    Abstract: GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B QC2004
    Text: Preliminary GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


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    GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B QC2004 PDF

    Untitled

    Abstract: No abstract text available
    Text: GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs Features Linear Burst Order (LBO) input. The Burst function need not


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    GS8161E18D /GS8161E32D /GS8161E36D 100-Pin 165-Bump 8161ExxD PDF

    Untitled

    Abstract: No abstract text available
    Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 250 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation


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    GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump PDF

    Untitled

    Abstract: No abstract text available
    Text: GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs Features Linear Burst Order (LBO) input. The Burst function need not


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    GS8161E18D /GS8161E32D /GS8161E36D 100-Pin 165-Bump 8161ExxD PDF

    Untitled

    Abstract: No abstract text available
    Text: GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb SyncBurst SRAMs Features Linear Burst Order (LBO) input. The Burst function need not


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    GS8161E18D /GS8161E32D /GS8161E36D 100-Pin 165-Bump 8161ExxD PDF

    GS8161E36B

    Abstract: GS8161E18B GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250
    Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


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    GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead GS8161E36B GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8161E18D GT/D /GS8161E32D(D)/GS8161E36D(GT/D) 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp Features Linear Burst Order (LBO) input. The Burst function need not


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    GS8161E18D /GS8161E32D /GS8161E36D 100-Pin 165-Bump 8161ExxD PDF

    QC2004

    Abstract: GS8161E18B GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B
    Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


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    GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead QC2004 GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B PDF

    Untitled

    Abstract: No abstract text available
    Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply


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    GS8161E18B /GS8161E32B /GS8161E36B 100-lead 165-bump PDF

    GS8161E18B

    Abstract: GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B
    Text: GS8161E18B T/D /GS8161E32B(D)/GS8161E36B(T/D) 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


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    GS8161E18B /GS8161E32B /GS8161E36B 100-Pin 165-Bump 100-lead GS8161E18BT-150 GS8161E18BT-200 GS8161E18BT-250 GS8161E36B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


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    GS8161ExxB 100-Pin 165-Bump 100-lead 8161Exx-xxxV PDF

    GS8161E18BT-150V

    Abstract: GS8161E18BT-200V GS8161E18BT-250V QC2004
    Text: Preliminary GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


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    GS8161ExxB 100-Pin 165-Bump 100-lead 100-tion 8161Exx-xxxV GS8161E18BT-150V GS8161E18BT-200V GS8161E18BT-250V QC2004 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8161E18/36T-250/225/200/166/150/133 1M x 18, 512K x 36 16Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan


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    GS8161E18/36T-250/225/200/166/150/133 100-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline


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    GS8161ExxB 100-Pin 165-Bump 8161Exx-xxxV PDF

    GS8161E18

    Abstract: GS8161E18T-250 GS8161E36 A13478
    Text: Preliminary GS8161E18/36T-250/225/200/166/150/133 1M x 18, 512K x 36 18Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan


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    GS8161E18/36T-250/225/200/166/150/133 100-Pin 100-lead GS8161E18 GS8161E18T-250 GS8161E36 A13478 PDF

    Untitled

    Abstract: No abstract text available
    Text: GS8161ExxD GT/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation


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    GS8161ExxD 100-Pin 165-Bump 8161ExxD PDF

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


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    K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20 PDF

    IS61LF51232-8

    Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
    Text: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML


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    IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML IS61DDB22M36-250M IS61DDB22M36-250M3 IS61DDB22M36-250M3L IS61LF51232-8 IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8161E18/36T-225/200/180/166/150/133 1M x 18, 512K x 36 16Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • IEEE 1149.1 JTAG-compatible Boundary Scan


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    GS8161E18/36T-225/200/180/166/150/133 100-Pin GS8161E18T 2000C GS8161E18 2000D GS18/3662 2/2000E; 8161E18 PDF

    GS8161E18BT-150V

    Abstract: GS8161E18BT-200V GS8161E18BT-250V
    Text: Preliminary GS8161ExxB T/D -xxxV 100-Pin TQFP & 165-Bump BGA Commercial Temp Industrial Temp 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation


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    GS8161ExxB 100-Pin 165-Bump 100-lead 8161Exx-xxxV GS8161E18BT-150V GS8161E18BT-200V GS8161E18BT-250V PDF

    GS8161E18D-133

    Abstract: GS8161E18D-150 GS8161E18D-166 GS8161E18D-200 GS8161E18D-225 GS8161E18D-250
    Text: Revision: 9/26/02 GS8161E18/32/36D Supplemental Datasheet Information This supplemental information applies to the GS8161E18/36T datasheet, which you will find attached to this document. This supplement includes a new package offering the 165-bump BGA—Package D , as well as an additional organization (x32, which is only


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    GS8161E18/32/36D GS8161E18/36T 165-bump BGA--x18 8161E18 GS8161E18D-133 GS8161E18D-150 GS8161E18D-166 GS8161E18D-200 GS8161E18D-225 GS8161E18D-250 PDF