PF01411A
Abstract: BLO1RN1-A62 Hitachi DSA00231
Text: PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433D Z 5th Edition Jan. 2001 Application • For E-GSM class4 880 MHz to 915 MHz • For 4.8 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc
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PF01411A
ADE-208-433D
PF01411A
BLO1RN1-A62
Hitachi DSA00231
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PF01411B
Abstract: PF01411 hitachi tantalum capacitor Hitachi DSA00231
Text: PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434C Z 4th Edition Jan. 2001 Application • For E-GSM class4 880 MHz to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc
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PF01411B
ADE-208-434C
PF01411B
PF01411
hitachi tantalum capacitor
Hitachi DSA00231
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ECM029
Abstract: GSM 900 module circuit diagram
Text: PRELIMINARY DATA SHEET ECM029 3V GSM POWER AMPLIFIER MODULE Applications Features 3.5V Single Supply Operation 50 Ohms internally matched for input and output 8-pin, 6 X 6mm LGA, surface mounted module On Board band select and output power control GPRS capable Class 8, 10 and 12, 4 TX slots max.
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ECM029
GSM900
ECM029
SS-000629-000
AP-000513-000
AP-000516-000
GSM 900 module circuit diagram
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RF1G
Abstract: AWS5523 AWS5523D1 rf2g
Text: AWS5523 0.5 to 2.5 GHz SP3T Switch ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • • • • Low Insertion Loss: 0.5 dB at 2 GHz High Isolation: > 25 dB Low Harmonic Levels: < -65 dBc at max. GSM power Low Control Voltage Operation: to +2.5 V APPLICATIONS
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AWS5523
AWS5523
RF1G
AWS5523D1
rf2g
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AWS5523
Abstract: AWS5523D1 rf2g
Text: AWS5523 0.5 to 2.5 GHz SP3T Switch ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • • • • Low Insertion Loss: 0.5 dB at 2 GHz High Isolation: > 25 dB Low Harmonic Levels: < -65 dBc at max. GSM power Low Control Voltage Operation: to +2.5 V APPLICATIONS
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AWS5523
AWS5523
AWS5523D1
rf2g
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Untitled
Abstract: No abstract text available
Text: RF2451 3V LOW NOISE AMPLIFIER Typical Applications • GSM Handsets • IF or RF Buffer Amplifiers • CDMA Handsets • Driver Stage for Power Amplifiers • TDMA Handsets • Oscillator Loop Amplifiers 0.012 E S 0.118 + 0.004 sq. 0.034 6° MAX 0° MIN N
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RF2451
700MHz
2000MHz
451400A
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rf2g
Abstract: AWS5524 AWS5524D1
Text: AWS5524 0.5 to 2.5 GHz SP4T Switch ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • Low Insertion Loss: 0.8 dB at 2 GHz • High Isolation: > 25 dB • Low Harmonic Levels: < -65 dBc at max. GSM power • Low Control Voltage Operation: to +2.5 V APPLICATIONS
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AWS5524
AWS5524
rf2g
AWS5524D1
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7M5004
Abstract: GSM module BLOCK diagram GSM900 GSM 300
Text: TQM 7M5004 Preliminary Data Sheet GSM/EDGE Multi-mode Power Amplifier Module Functional Block Diagram Features DCS / PCS in DCS / PCS Out Band Select TX_EN Logic VBATT VCC Mode Select VRAMP Power Control Vbias digital GSM 850 / 900 IN GSM 850 / 900 Out Product Description
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7M5004
7M5004
18dBm
GSM module BLOCK diagram
GSM900
GSM 300
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TQM7M9023
Abstract: marking NS05 HSPA Module Rel99 triquint tqm7m9023 Multiband RF Transceiver HSDPA power amplifier LTE transceiver Triquint PA LTE MMPA
Text: TQM7M9023 Data Sheet 5.0x7.5mm Multimode Multiband Power Amplifier MMPA (Quad-Band GSM / EDGE and Tri-band W/CDMA/HSPA+/LTE) Functional Block Diagram Features • Quad-Band Linear GSM/EDGE UMTS B1 and B5/8 Input power controlled – GMSK and 8PSK
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TQM7M9023
TQM7M9023
marking NS05
HSPA Module
Rel99
triquint tqm7m9023
Multiband RF Transceiver HSDPA
power amplifier LTE transceiver
Triquint PA LTE
MMPA
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Untitled
Abstract: No abstract text available
Text: TQM7M9023 Data Sheet 5.0x7.5mm Multimode Multiband Power Amplifier MMPA (Quad-Band GSM / EDGE and Tri-band W/CDMA/HSPA+/LTE) Functional Block Diagram Features • Quad-Band Linear GSM/EDGE UMTS B1 and B5/8 Input power controlled – GMSK and 8PSK
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TQM7M9023
TQM7M9023
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triquint tqm7m9023
Abstract: TQM7M9023 LTE RF Multiband RF transceiver LTE EVDO Rev A Triquint PA LTE
Text: TQM7M9023 Data Sheet 5.0x7.5mm Multimode Multiband Power Amplifier MMPA (Quad-Band GSM / EDGE and Tri-band W/CDMA/HSPA+/LTE) Functional Block Diagram Features • Quad-Band Linear GSM/EDGE UMTS B1 and B5/8 Input power controlled – GMSK and 8PSK
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TQM7M9023
TQM7M9023
triquint tqm7m9023
LTE RF Multiband
RF transceiver LTE
EVDO Rev A
Triquint PA LTE
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gsm module datasheet
Abstract: 7M5003 amplifier gsm signal GSM module BLOCK diagram GSM module circuit diagram gsm signal amplifier QUALCOMM Reference design SOIC-14 SOIC-16 TQM7M5003
Text: 11 TQM7M5003 Data Sheet Quad-Band GSM/EDGE Polar Power Amplifier Module Functional Block Diagram Features x x x x x x x x x x GSM/EDGE Multi-Mode Capability Optimized for Operation with Qualcomm’s Multi-mode Chip Sets - 38dB Typical ACPR 200KHz - 66dB Typical ACPR (400 KHz)
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TQM7M5003
200KHz)
TQM7M5003
gsm module datasheet
7M5003
amplifier gsm signal
GSM module BLOCK diagram
GSM module circuit diagram
gsm signal amplifier
QUALCOMM Reference design
SOIC-14
SOIC-16
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7m5003
Abstract: TQM7M5003 SOIC-14 SOIC-16 TSSOP-20 TSSOP-28 GSM module circuit diagram
Text: 11 TQM7M5003 Data Sheet Quad-Band GSM/EDGE Polar Power Amplifier Module Functional Block Diagram Features • • • • • • • • • • GSM/EDGE Multi-Mode Capability Optimized for Operation with Qualcomm’s Multi-mode Chip Sets - 38dB Typical ACPR 200KHz
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TQM7M5003
200KHz)
TQM7M5003
7m5003
SOIC-14
SOIC-16
TSSOP-20
TSSOP-28
GSM module circuit diagram
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TSMC 0.35um
Abstract: GSM module circuit diagram tsmc cmos GSM gsm signal amplifier tsmc cmos GSM RF module 0.35Um tsmc TSMC 0.35um digital gsm signal amplifier circuit diagram TQD764022
Text: TQD7M4022A Preliminary Data Sheet CMOS Power Control Die for GSM Modules Features Functional Block Diagram • CMOS_010_6_2_2 circuit, including PA interface Part of 3-chip set which provides 4-band operation with integrated, closed-loop power control Wide input voltage range: 3.0 to 4.5V
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TQD7M4022A
TSMC 0.35um
GSM module circuit diagram
tsmc cmos GSM
gsm signal amplifier
tsmc cmos
GSM RF module
0.35Um tsmc
TSMC 0.35um digital
gsm signal amplifier circuit diagram
TQD764022
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tqm7m5001
Abstract: GSM module BLOCK diagram GSM max power diagram GSM module TQM7M4006 TQM7M5002
Text: TQM7M5002 Data Sheet Quad-Band GSM/EDGE Polar Power Amplifier Module Functional Block Diagram Features • • • • • • • Product Description GSM/EDGE Multi-Mode Capability Optimized for Operation with Major Chipset Vendors > 50dB Typical Dynamic Range
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TQM7M5002
TQM7M5001
TQM7M4006
TQM7M5002
400KHz)
tqm7m5001
GSM module BLOCK diagram
GSM max power diagram
GSM module
TQM7M4006
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GSM 900, 1800, 1900 max power diagram
Abstract: GSM module circuit diagram GSM module BLOCK diagram gsm antenna gsm module datasheet gsm module miniature SKY14141
Text: ADVANCED DATASHEET SKY14141: GSM Quad-Band Antenna Switch Module Function Block Diagram and Pin Out Antenna Quad-band 850/900/1800/1900 GSM/GPRS/EDGE N/C ● Features ● ● Description The SKY14141 is a miniature 4 mm x 4 mm antenna switch module for GSM/GPRS/EDGE 850/900/1800/1900 quad-band
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SKY14141:
SKY14141
GSM 900, 1800, 1900 max power diagram
GSM module circuit diagram
GSM module BLOCK diagram
gsm antenna
gsm module datasheet
gsm module miniature
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GSM module circuit diagram
Abstract: GSM module BLOCK diagram gsm Handset Circuit Diagram TQM7M5008 "polar modulation" GSM module gsm module datasheet max2920 polar modulation
Text: 11 TQM7M5008 Data Sheet Quad-Band GSM/EDGE Polar Power Amplifier Module Functional Block Diagram Features • Product Description The TQM7M5008 is a small 7x7mm , GSM/EDGE PAM for handset applications. This module has been optimized for excellent EDGE efficiency , ACPR and EVM in an open loop polar
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TQM7M5008
TQM7M5008
400KHz)
87dBm
200KHz)
MSL260C
GSM module circuit diagram
GSM module BLOCK diagram
gsm Handset Circuit Diagram
"polar modulation"
GSM module
gsm module datasheet
max2920
polar modulation
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polar modulation
Abstract: No abstract text available
Text: 11 TQM7M5008 Data Sheet Quad-Band GSM/EDGE Polar Power Amplifier Module Functional Block Diagram Features • • • • • • • • • • • Product Description The TQM7M5008 is a small 7x7mm , GSM/EDGE PAM for handset applications. This module has been optimized for
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TQM7M5008
87dBm
200KHz)
MSL260C
TQM7M5008
400KHz)
polar modulation
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"polar modulation"
Abstract: GSM module TQM7M5008 max2920 polar modulation
Text: 11 TQM7M5008 Data Sheet Quad-Band GSM/EDGE Polar Power Amplifier Module Functional Block Diagram Features • • Product Description The TQM7M5008 is a small 7x7mm , GSM/EDGE PAM for handset applications. This module has been optimized for excellent EDGE efficiency , ACPR and EVM in an open loop polar
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TQM7M5008
TQM7M5008
400KHz)
87dBm
200KHz)
MSL260C
"polar modulation"
GSM module
max2920
polar modulation
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PDF
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Untitled
Abstract: No abstract text available
Text: 11 TQM7M5008 Data Sheet Quad-Band GSM/EDGE Polar Power Amplifier Module Functional Block Diagram Features • • • • • • • • • • • Product Description The TQM7M5008 is a small 7x7mm , GSM/EDGE PAM for handset applications. This module has been optimized for
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TQM7M5008
87dBm
200KHz)
MSL260C
TQM7M5008
400KHz)
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GSM module circuit diagram
Abstract: No abstract text available
Text: TQM7M4006 DATASHEET 3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module Features Functional Block Diagram DCS / PCS in DCS / PCS Out Band Select Logic • • • TX_EN VCC VBATT Power Control VRAMP GSM 850 / 900 IN GSM 850 / 900 Out Product Description
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TQM7M4006
GSM850/GSM900/DCS/PCS
GSM850
GSM900
TQM7M4006
GSM module circuit diagram
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and630
Abstract: 33p capacitor capacitor 220p AWT924S10 DCS1800 MMUN2234 SD-103
Text: AWT924S10 TX POWER MMIC A Advanced Product Information Rev. 1 GSM/DCS DUAL BAND GaAs POWER AMPLIFIER IC DESCRIPTION The AWT924 is a monolithic GaAs Power Amplifier. It can be used in the following dual band handset applications: GSM900/DCS1800. BLOCK DIAGRAM
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AWT924S10
AWT924
GSM900/DCS1800.
16-SSOP
and630
33p capacitor
capacitor 220p
AWT924S10
DCS1800
MMUN2234
SD-103
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PCA5075
Abstract: SSOP20
Text: PHILIPS INTERNATIONAL b?E D • ?110A2b DQbSlSO Sfil « P H I N Philips Sem iconductors RF Communications Products Preliminary specification Power amplifier controller for GSM systems FEATURES PCA5075 QUICK REFERENCE DATA .CMOS low power SYMBOL PARAMETER MIN. TYP. MAX. UNIT
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711002b
PCA5075
PCA5075
SSOP20
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BGY203
Abstract: 180PF PCF5075 SSOP16 RF sensor MGC570 FEB279
Text: Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems CONTENTS 1 FEATURES 2 QUICK REFERENCE DATA 3 ORDERING INFORMATION 4 BLOCK DIAGRAM 5 PINNING 6 FUNCTIONAL DESCRIPTION 6.2 6.2.1 6.2.2 6.3 6.4 6.4.1 6.4.2 6.4.3 6.5
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