GSM repeater circuit
Abstract: GSM repeater Diplexer GSM Diplexer cavity Diplexer JXMBSG-T-G24-01-C
Text: GSM Cavity Diplexer The content of this specification may change without notification 9/01/09 GSM Cavity Diplexer ►Applications ●Special for GSM Repeater ►Features ● High “Q”, Low Insertion Loss ● Symmetric Pseudo Elliptic Designs, High Selectivity,
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JXMBSG-T-G24-01-C
885-909MHz
930-954MHz
DC-840MHz
DC-885MHz
840-865MHz
909-921h
JXMBSG-T-G6-01-C
909-915MHz
954-960MHz
GSM repeater circuit
GSM repeater
Diplexer GSM
Diplexer
cavity Diplexer
JXMBSG-T-G24-01-C
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Untitled
Abstract: No abstract text available
Text: Agilent Technologies E7475A GSM Drive-Test System Product Overview Do more than just detect problems on your GSM network, solve them with a combination phoneand receiver-based drive-test system Drive-testing shouldn’t just uncover problems on your GSM network – it
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E7475A
5980-0439E
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RF Hitec
Abstract: 455KHz notch filter 30 MHz crystal notch filter Ceramic Filters Low Pass 5MHz LC Band Pass Filter band pass filter 10.7mhz RHF-1950R20 RHF-897.2R GSM RHF-935-25A IMT-2000
Text: CAVITY FILTER Cellular/ GSM IMT2000/ WLL FILTER ISO9001 Certified V. 1.8 [FEATURES] Application for Base Stations, Repeaters Low Insertion Loss High Attenuation Custom Design and Development is available GSM Cellular ❍ ❍ ❍ ❍ Model Frequency Range
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IMT2000/
ISO9001
RHF-840R10A
RHF-836R25A
RHF-897
RHDUP-890-25A
RHF-935-25A
20MHz
10MHz)
RF Hitec
455KHz notch filter
30 MHz crystal notch filter
Ceramic Filters Low Pass
5MHz LC Band Pass Filter
band pass filter 10.7mhz
RHF-1950R20
RHF-897.2R GSM
RHF-935-25A
IMT-2000
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GSM repeater circuit
Abstract: advantages of GSM module RS232 usb caller id GSM Intercom From circuit GSM repeater mobile switching centre in gsm Zebra gsm analog converter ANALOG TELEPHONE base station receiver GSM
Text: SunRise Zebra GSM Repeater Smart Mini-PBX with GSM access Solar Panel SunRise When the communication distance becomes greater, it’s convenient and cost efficient to install Sunrise frequency repeaters. Armed complete with interface module and its own solar power supply,
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RS-232
GSM repeater circuit
advantages of GSM module RS232
usb caller id
GSM Intercom From circuit
GSM repeater
mobile switching centre in gsm
Zebra
gsm analog converter
ANALOG TELEPHONE
base station receiver GSM
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A1042
Abstract: C 6089 repeater GSM LNA
Text: LNA A1042 Applications • Base Transceiver Stations, Tower Mounted Amplifier, Repeater for GSM 850, GSM 900 and CDMA ■ General Purpose Low Noise Amplifier Major Characteristics ■ Matched amplifier with low noise and high gain ■ Off-the-shelf component, tape & reel packaged
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A1042
PS-013-0404
A1042
C 6089
repeater GSM LNA
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SKY65126
Abstract: SKY65050-372LF
Text: 2G, 3G Base Station Repeater Part numbers link to product information Down-Link/Up-Link Down-Link/Up-Link RF Frequency Band: GSM, TD-SCDMA, WCDMA RF Frequency Band: GSM, DCS,DCS, PCS,PCS, TD-SCDMA, WCDMA MHz, 900MHz, MHz,LTE 1800/1900 MHz, LTEGHz 2.1 GHz, 2.3–2.4 GHz
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Down-Con65016
SKY73134
AV113-12LF
SMP1307
SMP1307
SKY73134-11
SKY65017-70LF
SKY74038-21
SKY65013
SKY65126
SKY65050-372LF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27801-1E ASSP For Power Management Applications Mobile Phones Power Management IC for GSM Mobile Phone MB3891 • DESCRIPTION MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all
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DS04-27801-1E
MB3891
MB3891
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RR40-41
Abstract: F0007 MB3891 MB3891PFV sim 28
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27801-1E ASSP For Power Management Applications Mobile Phones Power Management IC for GSM Mobile Phone MB3891 • DESCRIPTION MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all
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DS04-27801-1E
MB3891
MB3891
F0007
RR40-41
F0007
MB3891PFV
sim 28
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F0007
Abstract: MB3891 MB3891PFV
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27801-1E ASSP For Power Management Applications Mobile Phones Power Management IC for GSM Mobile Phone MB3891 • DESCRIPTION MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all
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DS04-27801-1E
MB3891
MB3891
F0007
MB3891PFV
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GSM repeater circuit
Abstract: repeater gsm circuit GSM repeater power amplifier module dual gsm repeater repeater gsm gsm repeater LMV242
Text: April 2004 LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller General Description Features The LMV242 is a power amplifier PA controller intended for use within an RF transmit power control loop in GSM/GPRS mobile phones. The LMV242 supports all single-supply PA’s
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LMV242
LMV242
GSM repeater circuit
repeater gsm circuit
GSM repeater power amplifier module
dual gsm repeater
repeater gsm
gsm repeater
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NE5500434
Abstract: nec RF package SOT89 nec 2501
Text: DATA SHEET SILICON POWER MOS FET NE5500434 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate lateral MOS
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NE5500434
NE5500434
OT-89
nec RF package SOT89
nec 2501
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm
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NE5500179A
NE5500179A
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NE5500179A
Abstract: NE5500179A-T1 VP215
Text: DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm
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NE5500179A
NE5500179A
NE5500179A-T1
VP215
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transistor NEC D 882 p
Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor nec 618 nec 882 datasheet transistor NEC 882 p NE5500179A NE5500179A-T1 VP215
Text: DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology NEC’s
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NE5500179A
NE5500179A
transistor NEC D 882 p
nec d 882 p datasheet
nec d 882 p
nec d 882 p transistor
nec 618
nec 882 datasheet
transistor NEC 882 p
NE5500179A-T1
VP215
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S1312A
Abstract: AC1349 Skyworks PA LTE C1349
Text: PRELIMINARY DATA SHEET SKY65172: 400-2700 MHz Variable Gain Amplifier Applications Description • GSM/EDGE, CDMA2000, WCDMA, LTE, TD-SCDMA cellular base station systems Repeaters WLL and ISM band transmitters Other wireless communication systems
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SKY65172:
CDMA2000,
SKY65172
01213A
S1312A
AC1349
Skyworks PA LTE
C1349
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SKY67151-396LF-EVB
Abstract: SKY67151 sky67151-396lf
Text: PRELIMINARY DATA SHEET SKY67151-396LF: 0.7-3.8 GHz Ultra Low-Noise Amplifier Applications • LTE, GSM, WCDMA, TD-SCDMA infrastructure • Ultra low-noise, high performance LNAs • Cellular repeaters • High temperature applications to +105 °C Features
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SKY67151-396LF:
J-STD-020)
SKY67151-396LF
02390A
SKY67151-396LF-EVB
SKY67151
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dual gsm repeater
Abstract: gsm repeater GSM repeater circuit SKY65330 Base Station subsystem DCS1800 EGSM900 PCS1900
Text: PRODUCT SUMMARY SKY65330: Tx/Rx Front-End Module with Integrated Coupler for Quad-Band GSM and EDGE Applications Applications • Quad-band femto base stations and cellular repeaters for GSM850, EGSM900, DCS1800, and PCS1900 bands Features • High efficiency
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SKY65330:
GSM850,
EGSM900,
DCS1800,
PCS1900
40-pin,
J-STD-020)
SKY65330
00926A
dual gsm repeater
gsm repeater
GSM repeater circuit
Base Station subsystem
DCS1800
EGSM900
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Untitled
Abstract: No abstract text available
Text: HMC334LP4 / 334LP4E v02.0310 MIXERS - DOWNCONVERTERS - SMT 9 SiGe WIDEBAND DOWNCONVERTER, 0.8 - 2.7 GHz Typical Applications Features The HM334LP4 E is ideal for: Conversion Loss: 0 dB • Basestations & Repeaters LO to RF Isolation: 48 dB • GSM, GPRS & Edge
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HMC334LP4
334LP4E
HM334LP4
con4350
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class h power amplifier schematic
Abstract: MCH185A100DK ECJ1VF1A105Z ECP100 ECS-H1CC106R MCH185A101JK MCH185A180JK QFN-16 06035J0R5BBT L1123
Text: ECP100 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems 100 - 2300MHz 31 dBm P1dB High Linearity: 47 dBm OIP3 High Efficiency: PAE > 45%
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ECP100
PCS/CDMA2000/IMT2000/UMTS
2300MHz
96GHz
QFN-16
ECP100
SS-000535-000
class h power amplifier schematic
MCH185A100DK
ECJ1VF1A105Z
ECS-H1CC106R
MCH185A101JK
MCH185A180JK
QFN-16
06035J0R5BBT
L1123
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16 pin 4x4 amplifier gsm
Abstract: amplifier QFN16 MCH185A3R3CK
Text: ECP100 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems 100 - 2300MHz 31 dBm P1dB High Linearity: 47 dBm OIP3 High Efficiency: PAE > 45%
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ECP100
2300MHz
96GHz
PCS/CDMA2000/IMT2000/UMTS
QFN-16
ECP100
ECP100G
ECP100G-500
ECP100G-1000
ECP100D
16 pin 4x4 amplifier gsm
amplifier QFN16
MCH185A3R3CK
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Untitled
Abstract: No abstract text available
Text: HMC334LP4 / 334LP4E v03.0410 MIXERS - DOWNCONVERTERS - SMT 9 SiGe WIDEBAND DOWNCONVERTER, 0.6 - 2.7 GHz Typical Applications Features The HM334LP4 E is ideal for: Conversion Loss: 0 dB • Basestations & Repeaters LO to RF Isolation: 48 dB • GSM, GPRS & Edge
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HMC334LP4
334LP4E
HM334LP4
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MABAES0061
Abstract: HMC334LP4 HMC334LP4E LTE baseband chip center tap transformer 10 0 0410
Text: HMC334LP4 / 334LP4E v03.0410 MIXERS - DOWNCONVERTERS - SMT 9 SiGe WIDEBAND DOWNCONVERTER, 0.6 - 2.7 GHz Typical Applications Features The HM334LP4 E is ideal for: Conversion Loss: 0 dB • Basestations & Repeaters LO to RF Isolation: 48 dB • GSM, GPRS & Edge
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HMC334LP4
334LP4E
HM334LP4
MABAES0061
HMC334LP4E
LTE baseband chip
center tap transformer 10 0 0410
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Untitled
Abstract: No abstract text available
Text: TGA4935 High Linearity LNA Gain Block Applications • • • • • • Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems Military Communications Product Features • • • • • • • Functional Block Diagram
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TGA4935
TGA4935
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Untitled
Abstract: No abstract text available
Text: HMC334LP4 / 334LP4E v03.0410 MIXERS - DOWNCONVERTERS - SMT 9 SiGe WIDEBAND DOWNCONVERTER, 0.6 - 2.7 GHz Typical Applications Features The HM334LP4 E is ideal for: Conversion Loss: 0 dB • Basestations & Repeaters LO to RF Isolation: 48 dB • GSM, GPRS & Edge
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HMC334LP4
334LP4E
HM334LP4
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