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ROHM Semiconductor MCH185A100DK CAP CER 10PF 50V C0G/NP0 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCH185A100DK	Cut Tape			1	1 $0.1 10 $0.1 100 $0.1 1000 $0.1 10000 $0.1	Buy Now
	MCH185A100DK	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.009	Buy Now
Bristol Electronics	MCH185A100DK		13,719			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MCH185A100DK		55,948			1 $0.036 10 $0.036 100 $0.036 1000 $0.036 10000 $0.0068	Buy Now
	MCH185A100DK		10,975			1 $2.5 10 $2.5 100 $2.5 1000 $0.875 10000 $0.75	Buy Now
NexGen Digital	MCH185A100DK		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ROHM CO LTD MCH185A100DK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MCH185A100DK		16,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
KOA Speer Electronics Inc MCH185A100DK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MCH185A100DK		4,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MCH185A100DK		2,370			1 $0.036 10 $0.036 100 $0.036 1000 $0.0135 10000 $0.0135	Buy Now

MCH185A100DK Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MCH185A100DK		ROHM	Ceramic Capacitors, Capacitors, CAP CER 10PF 50V NP0 0603		Original	PDF

MCH185A100DK Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
4069 NOT GATE IC Abstract: NEC LDMOS Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz	Original	NE5520379A GSM900 4069 NOT GATE IC NEC LDMOS	PDF
Untitled Abstract: No abstract text available Text: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs	Original	SPA1426Z SOF-26 SPA1426Z enha9421 DS120601 SPA1426ZSQ	PDF
12c5a Abstract: NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP (Bottom View) Gate 1.2 MAX. Drain 1.0 MAX. 4.4 MAX.	Original	NE5520379A 9Z001 GSM900/DCS 12c5a NE55xx GSM900 MCH185A180JK NE5520379A NE5520379A-T1A-A 16651 IC 7109 LDMOS NEC	PDF
ECP050D-500 Abstract: No abstract text available Text: ECP050 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 1800 MHz - 2300MHz 28dBm P1dB High Linearity: 45dBm OIP3 High Efficiency: PAE > 45% 15 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters	Original	ECP050 2300MHz 28dBm 45dBm PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP050 ECP050G ECP050G-500 ECP050G-1000 ECP050D-500	PDF
16l soic8 Abstract: qfn16 thermal resistance Text: ECP053 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 2.4GHz - 2.7GHz 28dBm P1dB High Linearity: 43dBm OIP3 High Efficiency: PAE > 45% 13 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters	Original	ECP053 28dBm 43dBm QFN-16 ECP053 ECP053G ECP053G-500 ECP053G-1000 ECP053D ECP053D-500 16l soic8 qfn16 thermal resistance	PDF
Transistor BC 457 Abstract: SOF-26 SPA1426Z POWER TRANSISTOR MCH185CN104KK TAJA105K020R bc 457 Transistor MCH185A221JK -1426Z Text: SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier SPA-1426Z Preliminary 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER RoHS Compliant and Pb-Free Product Package: SOF-26 Product Description Features RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar	Original	SPA-1426Z SOF-26 SPA-1426Z SPA-1426Z-EVB1 850MHz 910MHz SPA-1426Z-EVB2 Transistor BC 457 SOF-26 SPA1426Z POWER TRANSISTOR MCH185CN104KK TAJA105K020R bc 457 Transistor MCH185A221JK -1426Z	PDF
J50 mosfet Abstract: MCH185A180JK GSM900 MCH185A4R7CK NE5520379A NE5520379A-T1A PT 4962 FET 4016 ldmos nec Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz	Original	NE5520379A NE5520379A J50 mosfet MCH185A180JK GSM900 MCH185A4R7CK NE5520379A-T1A PT 4962 FET 4016 ldmos nec	PDF
CL10B104KONC Abstract: AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK SGA-9289 Sirenza amplifier SOT-89 MCR03J200 Text: Design Application Note - AN022 SGA-9289 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the	Original	AN022 SGA-9289 EAN-101535 CL10B104KONC AN022 MCH185A220JK la 4440 amplifier circuit diagram 300 watt MCH185A390JK MCH185A100DK MCH185A4R7CK Sirenza amplifier SOT-89 MCR03J200	PDF
300 watts amplifier schematics Abstract: MCH185C102KK power amplifier 500 watt transistor circuit Text: ECP103 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters Multi-carrier systems 2.1-2.7GHz 30.5 dBm P1dB High Linearity: 46 dBm OIP3 High Efficiency: PAE > 40% 11 dB Linear Gain Single 5V Supply High Reliabilty	Original	ECP103 QFN-16 ECP103 ECP103G ECP103G-500 ECP103G-1000 ECP103D ECP103D-500 ECP103D-1000 QFN-16 300 watts amplifier schematics MCH185C102KK power amplifier 500 watt transistor circuit	PDF
Untitled Abstract: No abstract text available Text: ECP200 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 100 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 11 dB Linear Gain at 1.96GHz Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE	Original	ECP200 2300MHz 96GHz PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP200 ECP200G ECP200G-500 ECP200G-1000 ECP200D	PDF
16 pin 4x4 amplifier gsm Abstract: mch185C102kk MCH185A100DK ECJ-1VF1A105Z Text: PRELIMINARY DATA SHEET ECP052 0.5 WATT POWER AMPLIFIER Features Applications 0.8GHz to 1GHz 28.0dBm P1dB High Linearity: 44dBm OIP3 High Efficiency: PAE > 50% 17dB Linear Gain High Reliability Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE	Original	ECP052 44dBm QFN-16 ECP052 ECP052G ECP052G-500 ECP052G-1000 ECP052D ECP052D-500 ECP052D-1000 16 pin 4x4 amplifier gsm mch185C102kk MCH185A100DK ECJ-1VF1A105Z	PDF
CL10B104KONC Abstract: MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK SGA-9189 Sirenza amplifier SOT-89 ECB-102216-B AN-021 Text: Design Application Note - AN021 SGA-9189 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9189 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the	Original	AN021 SGA-9189 EAN-101534 CL10B104KONC MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK Sirenza amplifier SOT-89 ECB-102216-B AN-021	PDF
4069 NOT GATE IC Abstract: GSM900 MCH185A180JK MCH185A4R7CK NE5520379A NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz	Original	NE5520379A NE5520379A NE5520379A-EVAL 4069 NOT GATE IC GSM900 MCH185A180JK MCH185A4R7CK NE5520379A-T1A tc 9122 17339 NEC LDMOS ldmos nec	PDF
NEC 718 Abstract: LDMOS NEC Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER NE5520379A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 15 dB TYP @ 900 MHz	Original	NE5520379A 24-Hour NEC 718 LDMOS NEC	PDF

Untitled Abstract: No abstract text available Text: ECP203 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 2.1 - 2.7GHz 32.5 dBm P1dB High Linearity: 48 dBm OIP3 10 dB Linear Gain Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters Multi-carrier systems	Original	ECP203 QFN-16 ECP203 ECP203G ECP203G-500 ECP203G-1000 ECP203D ECP203D-500 ECP203D-1000 QFN-16	PDF
Transistor BC 457 Abstract: MCH185CN104KK SOF-26 TAJA105K020R SPA-1426Z Text: SPA-1426Z SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA-1426Z is made with InGaP-on-GaAs	Original	SPA-1426Z SOF-26 SPA-1426Z SOF-26 SPA-1426Z-EVB1 SPA-1426Z-EVB2 SPA-1426Z-EVB3 Transistor BC 457 MCH185CN104KK TAJA105K020R	PDF
bc 303 transistor Abstract: LL1608-FS3N9 TAJA105K020R MCH185A8R2JK GTEK MCH185CN104KK ML200D SOF-26 avg9 SPA1426Z Text: Preliminary SPA-1426Z Product Description Sirenza Microdevices’ SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with	Original	SPA-1426Z SPA-1426Z co105883 SPA-1426Z-EVB1 910MHz SPA-1426Z-EVB2 1960MHz SPA-1426Z-EVB3 bc 303 transistor LL1608-FS3N9 TAJA105K020R MCH185A8R2JK GTEK MCH185CN104KK ML200D SOF-26 avg9 SPA1426Z	PDF
SPA-1426 Abstract: Transistor BC 457 MCH185A8R2JK MCH185A221JK Text: SPA1426Z SPA1426Z 0.7GHz to 2.2GHz 1W InGaP HBT Amplifier 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1426Z is made with InGaP-on-GaAs	Original	SPA1426Z SPA1426Z SOF-26 SOF-26 Opt17] DS120601 SPA-1426 Transistor BC 457 MCH185A8R2JK MCH185A221JK	PDF
LDMOS NEC Abstract: No abstract text available Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP ��	Original	NE5520379A GSM900 HS350-P3 WS260 VP215 IR260 LDMOS NEC	PDF
J50 mosfet Abstract: LDMOS NEC Text: 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.5 – 0.2 4.2 Max Source • HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz	Original	NE5520379A GSM900 24-Hour J50 mosfet LDMOS NEC	PDF
2052-5636-02 100pf Abstract: GSM900 MCH185A180JK NE5520379A NE5520379A-T1A NEC LDMOS Text: NEC'S 3.2 V, 3 W, L/S BAND NE5520379A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35.5 dBm TYP 1.0 MAX. 4.4 MAX. Drain 0.8±0.15 9Z001 • CLASS AB OPERATION	Original	NE5520379A 9Z001 NE5520379A HS350-P3 2052-5636-02 100pf GSM900 MCH185A180JK NE5520379A-T1A NEC LDMOS	PDF
class h power amplifier schematic Abstract: MCH185A100DK ECJ1VF1A105Z ECP100 ECS-H1CC106R MCH185A101JK MCH185A180JK QFN-16 06035J0R5BBT L1123 Text: ECP100 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems 100 - 2300MHz 31 dBm P1dB High Linearity: 47 dBm OIP3 High Efficiency: PAE > 45%	Original	ECP100 PCS/CDMA2000/IMT2000/UMTS 2300MHz 96GHz QFN-16 ECP100 SS-000535-000 class h power amplifier schematic MCH185A100DK ECJ1VF1A105Z ECS-H1CC106R MCH185A101JK MCH185A180JK QFN-16 06035J0R5BBT L1123	PDF
16 pin 4x4 amplifier gsm Abstract: amplifier QFN16 MCH185A3R3CK Text: ECP100 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems 100 - 2300MHz 31 dBm P1dB High Linearity: 47 dBm OIP3 High Efficiency: PAE > 45%	Original	ECP100 2300MHz 96GHz PCS/CDMA2000/IMT2000/UMTS QFN-16 ECP100 ECP100G ECP100G-500 ECP100G-1000 ECP100D 16 pin 4x4 amplifier gsm amplifier QFN16 MCH185A3R3CK	PDF

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MCH185A100DK Search Results

MCH185A100DK Price and Stock

ROHM Semiconductor MCH185A100DK

ROHM CO LTD MCH185A100DK

KOA Speer Electronics Inc MCH185A100DK

MCH185A100DK Datasheets (1)

MCH185A100DK Datasheets Context Search

4069 NOT GATE IC

Untitled

12c5a

ECP050D-500

16l soic8

Transistor BC 457

J50 mosfet

CL10B104KONC

300 watts amplifier schematics

Untitled

16 pin 4x4 amplifier gsm

CL10B104KONC

4069 NOT GATE IC

NEC 718

Untitled

Transistor BC 457

bc 303 transistor

SPA-1426

LDMOS NEC

J50 mosfet

2052-5636-02 100pf

class h power amplifier schematic

16 pin 4x4 amplifier gsm