GT100DA60U
Abstract: No abstract text available
Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
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Original
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PDF
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GT100DA60U
OT-227
2002/95/EC
18-Jul-08
GT100DA60U
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GT100DA60U
Abstract: No abstract text available
Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
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Original
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PDF
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GT100DA60U
OT-227
E78996
2002/95/EC
11-Mar-11
GT100DA60U
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GT100DA60U
Abstract: No abstract text available
Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
|
Original
|
PDF
|
GT100DA60U
OT-227
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GT100DA60U
|
Untitled
Abstract: No abstract text available
Text: VS-GT100DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology with positive temperature coefficient • Speed 4 kHz to 30 kHz • Square RBSOA • 3 s short circuit capability
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Original
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PDF
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VS-GT100DA60U
OT-227
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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GT100DA60U
Abstract: No abstract text available
Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
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Original
|
PDF
|
GT100DA60U
OT-227
E78996
2002/95/EC
11-Mar-11
GT100DA60U
|
gt100da60u
Abstract: 184 324 DIODE V301000 gt100
Text: GT100DA60U Vishay High Power Products Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
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Original
|
PDF
|
GT100DA60U
OT-227
2002/95/EC
18-Jul-08
gt100da60u
184 324 DIODE
V301000
gt100
|
GT100DA60U
Abstract: No abstract text available
Text: GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft reverse
|
Original
|
PDF
|
GT100DA60U
OT-227
E78996
2002/95/EC
18-Jul-08
GT100DA60U
|
GT100DA60U
Abstract: No abstract text available
Text: GT100DA60U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology with positive temperature coefficient • Square RBSOA • 3 s short circuit capability • FRED Pt antiparallel diodes with ultrasoft
|
Original
|
PDF
|
GT100DA60U
OT-227
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GT100DA60U
|