Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GT8G131 Search Results

    SF Impression Pixel

    GT8G131 Price and Stock

    Toshiba America Electronic Components GT8G131(TE12L,Q)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics GT8G131(TE12L,Q) 4,846
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    GT8G131 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT8G131 Toshiba TRANS IGBT CHIP N-CH 400V 8A 8(2-6J1C) Original PDF
    GT8G131 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Original PDF
    GT8G131 Toshiba Discrete IGBTs Original PDF

    GT8G131 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a3120

    Abstract: GT8G131
    Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area • 4th generation trench gate structure IGBT • Enhancement-mode


    Original     		PDF GT8G131 a3120 GT8G131

    TCA160

    Abstract: No abstract text available
    Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area • 4th generation trench gate structure IGBT • Enhancement-mode


    Original     		PDF GT8G131 TCA160

    A3120

    Abstract: No abstract text available
    Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area • 4th generation trench gate structure IGBT • Enhancement-mode


    Original     		PDF GT8G131 A3120

    GT8G131

    Abstract: a3120
    Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area · 4th generation trench gate structure IGBT · Enhancement-mode


    Original     		PDF GT8G131 GT8G131 a3120

    A3120

    Abstract: IGBT gt8g131
    Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area · 4th generation trench gate structure IGBT · Enhancement-mode


    Original     		PDF GT8G131 A3120 IGBT gt8g131

    Untitled

    Abstract: No abstract text available
    Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area • 4th generation trench gate structure IGBT • Enhancement-mode


    Original     		PDF GT8G131

    IGBT gt8g131

    Abstract: GT8G131 a3120
    Text: GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm • Supplied in Compact and Thin Package Requires Only a Small Mounting Area • 4th generation trench gate structure IGBT • Enhancement-mode


    Original     		PDF GT8G131 IGBT gt8g131 GT8G131 a3120

    s5j53

    Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
    Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require


    Original     		PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A

    S6A35

    Abstract: SF3G42 SF10JZ47 S6785G SF3J42 1R5GU41 S6A37 SCR S6A37 GT8G132 SM3GZ47
    Text: [ 9 ] 応用回路例 [ 9 ] 応用回路例 1. スイッチング電源 1 自励式シングルフライバック方式 (RCC) 応用回路例 交 交流入力 二次整流 ダイオード 流 フィルタ + 直流出力 − 差動増幅 回 路 駆動用


    Original     		PDF AC100 1JU42 AC200 05NU42 CMS04, CMS05 5FWJ2CZ47M 5FWJ2C48M 10FWJ2CZ47M 10FWJ2C48M S6A35 SF3G42 SF10JZ47 S6785G SF3J42 1R5GU41 S6A37 SCR S6A37 GT8G132 SM3GZ47

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    ZS1092

    Abstract: flashtubes flashtube trigger coil Diagram igbt flash P6015A IGBT gt8g131 perkin GT8G131 200UF
    Text: Device Name Issued Date Issued By : BGDC 1017 /2502 : 09/03/2003 : Page # Rev Date Index # : 1 of 3 : : 1. Mechanical Data All dimensions in mm and diagram is not drawn to scale e l d r g b c 17+/-0.7 27.0 max 2.0+/-0.1 1.2+/-0.1 23.5+/-1.0 0.8+/-0.1 0.7+/-0.1


    Original     		PDF HS-DDC-H24-0004 ZS1092 flashtubes flashtube trigger coil Diagram igbt flash P6015A IGBT gt8g131 perkin GT8G131 200UF

    GT30F121

    Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
    Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications


    Original     		PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101