Improved Gate Drive for GTO Series Connections
Abstract: gto Gate Drive circuit snubber IGCT GTO gate drive unit gto 20A GTO switching circuit dynex GTO gtos AN5177-3 DGT409
Text: AN5177 Application Note AN5177 Improved Gate Drive For GTO Series Connections Application Note Replaces September 2000 version, AN5177-3.0 AN5177-3.1 July 2002 Using an improved gate drive to ease GTO series connection problems. INTRODUCTION There are problems encountered with dynamic voltage sharing
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AN5177
AN5177
AN5177-3
Improved Gate Drive for GTO Series Connections
gto Gate Drive circuit
snubber IGCT
GTO gate drive unit
gto 20A
GTO switching circuit
dynex GTO
gtos
DGT409
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snubber FOR 3PHASE BRIDGE RECTIFIER
Abstract: EUPEC Thyristor gct thyristor 74x26mm eupec igbt BSM 100 gb FAST HIGH VOLTAGE DIODE 4000 V EUPEC D1201 D1201 D170S eupec phase control thyristor
Text: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.
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D170S
D170U
snubber FOR 3PHASE BRIDGE RECTIFIER
EUPEC Thyristor
gct thyristor
74x26mm
eupec igbt BSM 100 gb
FAST HIGH VOLTAGE DIODE 4000 V
EUPEC D1201
D1201
eupec phase control thyristor
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DISC THYRISTOR
Abstract: D170U D1201 D170S single phase bridge rectifier pin configuration "921" Thyristor diode gto EUPEC Thyristor V4500 4500 igbt
Text: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.
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D170S
D170U
DISC THYRISTOR
D170U
D1201
single phase bridge rectifier pin configuration
"921" Thyristor
diode gto
EUPEC Thyristor
V4500
4500 igbt
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GTO thyristor Application notes
Abstract: gto Gate Drive circuit HP optocoupler GTO gate drive unit DG306A GTO thyristor THYRISTOR GTO DGT304SE DGT409BCA AN4571
Text: GDU 9X-XXXXX Series GDU 9X-XXXXX Series GTO Gate Drive Units Application Note Replaces March 1998 version, AN4571 - 5.1 AN4571-6.0 January 2000 This application note should be used in conjunction with individual Gate Drive Unit datasheets which contain electrical, timing and outline
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AN4571
AN4571-6
GTO thyristor Application notes
gto Gate Drive circuit
HP optocoupler
GTO gate drive unit
DG306A
GTO thyristor
THYRISTOR GTO
DGT304SE
DGT409BCA
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Untitled
Abstract: No abstract text available
Text: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse
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DGT409BCA
DS4414-4
DGT409
000V/Â
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DSF8045SK
Abstract: DSF8045SK40 DSF8045SK41 DSF8045SK42 DSF8045SK43 DSF8045SK44 DSF8045SK45
Text: DSF8045SK DSF8045SK Fast Recovery Diode Advance Information Replaces March 1998 version, DS4150-5.6 DS4146-6.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 430A IFSM 3500A Qr 440µC trr 3.07µs APPLICATIONS • Snubber Diode For GTO Applications FEATURES
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DSF8045SK
DS4150-5
DS4146-6
DSF8045SK45
DSF8045SK44
DSF8045SK43
DSF8045SK42
DSF8045SK41
DSF8045SK40
DSF8045SK
DSF8045SK40
DSF8045SK41
DSF8045SK42
DSF8045SK43
DSF8045SK44
DSF8045SK45
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TGS 2600
Abstract: GTO thyristor 3000V 800A 150a gto DGT409BCA DGT409BCA6565 TGS 200
Text: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse
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DGT409BCA
DS4414-4
DGT409
TGS 2600
GTO thyristor 3000V 800A
150a gto
DGT409BCA
DGT409BCA6565
TGS 200
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1000A 100V power diode
Abstract: DSF8045SK DSF8045SK40 DSF8045SK41 DSF8045SK42 DSF8045SK43 DSF8045SK44 DSF8045SK45
Text: DSF8045SK DSF8045SK Fast Recovery Diode Advance Information Replaces March 1998 version, DS4150-5.6 DS4146-6.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 430A IFSM 3500A Qr 440µC trr 3.07µs • Snubber Diode For GTO Applications FEATURES
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DSF8045SK
DS4150-5
DS4146-6
DSF8045SK45
DSF8045SK44
DSF8045SK43
DSF8045SK42
DSF8045SK41
DSF8045SK40
1000A 100V power diode
DSF8045SK
DSF8045SK40
DSF8045SK41
DSF8045SK42
DSF8045SK43
DSF8045SK44
DSF8045SK45
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TGS 2600
Abstract: 150a gto TGS 2600 series TGS 800 GTO thyristor 3000V 800A GTO 6500V AN4506 DGT409BCA DGT409BCA6565 gto Gate Drive
Text: DGT409BCA DGT409BCA Reverse Blocking Gate Turn-off Thyristor Replaces January 2000 version, DS4414-4.0 APPLICATIONS The DGT409 BCA is a symmetrical GTO designed for applications which specifically require a reverse blocking capability, such as current source inverters CSI . Reverse
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DGT409BCA
DS4414-4
DGT409
TGS 2600
150a gto
TGS 2600 series
TGS 800
GTO thyristor 3000V 800A
GTO 6500V
AN4506
DGT409BCA
DGT409BCA6565
gto Gate Drive
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1000A 100V power diode
Abstract: DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60
Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling
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DSF11060SG
DS4217-2
DS4548
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
M779b.
1000A 100V power diode
DSF11060SG
DSF11060SG55
DSF11060SG56
DSF11060SG58
DSF11060SG60
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DSF8035SK
Abstract: DSF8035SK35
Text: DSF8035SK DSF8035SK Fast Recovery Diode Replaces March 1998 version, DS4412-1.3 DS4412-2.0 January 2000 KEY PARAMETERS VRRM 3500V IF AV 335A IFSM 3500A Qr 400µC trr 4.0µs APPLICATIONS • Snubber Diode For GTO Applications FEATURES ■ Double side cooling
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DSF8035SK
DS4412-1
DS4412-2
DSF8035SK35
DSF8035SK
DSF8035SK35
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DSF8035SK35
Abstract: AN4506 AN4839 AN4853 DSF8035SK
Text: DSF8035SK DSF8035SK Fast Recovery Diode Replaces March 1998 version, DS4412-1.3 DS4412-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 335A IFSM 3500A Qr 400µC trr 4.0µs • Snubber Diode For GTO Applications FEATURES ■ Double side cooling
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DSF8035SK
DS4412-1
DS4412-2
DSF8035SK35
DSF8035SK35
AN4506
AN4839
AN4853
DSF8035SK
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DS4217-2
Abstract: ds4217 AN4506 DSF11060SG DSF11060SG55 DSF11060SG56 DSF11060SG58 DSF11060SG60 DSF110
Text: DSF11060SG DSF11060SG Fast Recovery Diode Replaces March 1998 version, DS4217-2.4 DS4548 - 3.2 January 2000 KEY PARAMETERS VRRM 6000V IF AV 400A IFSM 4200A Qr 700µC trr 6.0µs APPLICATIONS • Snubber Diode For GTO Circuits FEATURES ■ Double Side Cooling
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DSF11060SG
DS4217-2
DS4548
DSF11060SG60
DSF11060SG58
DSF11060SG56
DSF11060SG55
M779b.
ds4217
AN4506
DSF11060SG
DSF11060SG55
DSF11060SG56
DSF11060SG58
DSF11060SG60
DSF110
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DG858BW
Abstract: GTO thyristor 4500V 4000A 200a gto preliminary AN4506 AN4839 AN4853 DSF21545SV DSF21545SV45
Text: DSF21545SV DSF21545SV Fast Recovery Diode Replaces March 1998 version, DS4153-3.1 DS4153-4.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 3230A IFSM 20000A Qr 1800µC trr 7.0µs • The DSF21545SV is a purpose designed freewheel diode to complement the DG858BW GTO in inverter
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DSF21545SV
DS4153-3
DS4153-4
0000A
DSF21545SV
DG858BW
GTO thyristor 4500V 4000A
200a gto preliminary
AN4506
AN4839
AN4853
DSF21545SV45
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DSF8045SK
Abstract: No abstract text available
Text: DSF8045SK DSF8045SK Fast Recovery Diode Advance Information DS4146-8 July 2014 LN 31792 APPLICATIONS KEY PARAMETERS VRRM 4500V IF(AV) 430A IFSM 3500A Qr 440µC trr 3.07µs • Snubber Diode For GTO Applications FEATURES ■ Double side cooling ■ High surge capability
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DSF8045SK
DS4146-8
DSF8045SK45
DSF8045SK44
DSF8045SK43
DSF8045SK42
DSF8045SK41
DSF8045SK40
DSF8045SK
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DF685
Abstract: DS4303-1
Text: DF685 DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability
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DF685
DS4303-1
DS4303-2
DF685
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GTO thyristor 4500V 4000A
Abstract: DS4303-1 AN4506 AN4839 AN4853 DF685
Text: DF685 DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs APPLICATIONS • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability
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DF685
DS4303-1
DS4303-2
DF685
GTO thyristor 4500V 4000A
AN4506
AN4839
AN4853
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ACTQ04
Abstract: 54ACTQ04FMQB
Text: 54ACTQ04 Quiet Series Hex Inverter General Description The ’ACTQ04 contains six inverters and utilizes NSC Quiet Series technology to guarantee quiet output switching and improved dynamic threshold performance. FACT Quiet Series features GTO™ output control and undershoot corrector in addition to a split ground bus for superior ACMOS performance.
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54ACTQ04
ACTQ04
5-Aug-2002]
54ACTQ04FMQB
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74actQ04SC
Abstract: 74ACTQ04
Text: Revised March 2001 74ACTQ04 Quiet Series Hex Inverter General Description Features The ACTQ04 contains six inverters and utilizes Fairchild Quiet Series technology to guarantee quiet output switching and improved dynamic threshold performance. FACT Quiet Series features GTO output control and undershoot corrector in addition to a split ground bus for superior
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74ACTQ04
ACTQ04
74ACTQ04SC
74ACTQ04SJ
74ACTQ04MTC
74ACTQ04PC
MTC14
74ACTQ04
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Untitled
Abstract: No abstract text available
Text: 54ACTQ10 Quiet Series Triple 3-Input NAND Gate General Description The ’ACTQ10 contains three, 3-input NAND gates and utilizes NSC Quiet Series technology to guarantee quiet output switching and improved dynamic threshold performance. FACT Quiet Series features GTO ® output control and undershoot corrector in addition to a split ground bus for superior ACMOS performance.
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54ACTQ10
ACTQ10
5962-9218201MCA
5962-9218201MDA
6-Dec-2000]
0209/5962-9218201MDA
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AN4839
Abstract: RC5327230 Honeywell v3
Text: GDU 90 20722 GDU 90-20722 Gate Drive Unit Replaces March 1998 version, DS4568-3.1 DS4568-4.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. KEY PARAMETERS APPLICATIONS IFGM IG ON
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DS4568-3
DS4568-4
AN4571,
DG858BW
500mm
RC5327230
AN4839
RC5327230
Honeywell v3
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AN4839
Abstract: No abstract text available
Text: GDU 90-20721 GDU 90-20721 Gate Drive Unit Replaces March 1998 version, DS4567-3.1 DS4567-4.0 January 2000 This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit. APPLICATIONS KEY PARAMETERS IFGM IG ON
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DS4567-3
DS4567-4
AN4571,
DG858BW
500mm
RC5327230
AN4839
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GTO thyristor
Abstract: GTO ABB ABB GTO CSG THYRISTOR GTO GTO thyristor ABB abb ys thyristor CSG-601 THYRISTOR DE PUISSANCE 601-25-A ABB GTO
Text: , A B B S E M I C O N D U C TORS Asymmetric GTO Thyristors AG 001bß3ö 0000036 1 B A B B _ _ 3 6 E J>. Asymmetrische GTO Thyristoren Free-floating silicon High-dynamic voltage capability at turn-off Low on-state and switching losses Coaxial gate leads soldered
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OCR Scan
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Q000Q36
Vorm815
GTO thyristor
GTO ABB
ABB GTO CSG
THYRISTOR GTO
GTO thyristor ABB
abb ys thyristor
CSG-601
THYRISTOR DE PUISSANCE
601-25-A
ABB GTO
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TT220
Abstract: No abstract text available
Text: SGS-THOMSON * J f m[*IMmi gTO(oM][](g§ STHI07N50 STHI07N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT PRELIMINARY DATA TYPE V DSS STHI07N50 STHI07N50FI 500 V 500 V 7 A 7 A • HIGH INPUT IMPEDANCE • LOW O N-VOLTAGE • HIGH CURRENT C APABILITY
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STHI07N50
STHI07N50FI
ATT220
500ms
TT220
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