AN5205
Abstract: Gunn Diode at power supply circuit gunn diode radar gunn diodes Gunn Diode gunn diode oscillator diode gunn gunn diode radar module radar gunn diode AN5205-2
Text: AN5205 AC2001 - 77 GHz Gunn Oscillator Module Application Note AN5205-2.0 July 1999 Electric field breakdown of a Gunn diode is related to the 'nl' product of the device doping level multiplied by the active length . The Gunn diode used in the AC2001 is normally operated at about 5 to 7V, whereas voltage
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AN5205
AC2001
AN5205-2
AC2001
AN5205
Gunn Diode at power supply circuit
gunn diode radar
gunn diodes
Gunn Diode
gunn diode oscillator
diode gunn
gunn diode radar module
radar gunn diode
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Untitled
Abstract: No abstract text available
Text: MA49192-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power10m Frequency Min. (Hz)40G Frequency Max. (Hz)60G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.0 I(Oper.) Typ.(A) Oper. Current300m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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MA49192-138
Power10m
Current300m
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gunn diode
Abstract: No abstract text available
Text: DGB6839D Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power100m Frequency Min. (Hz)12.4G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage8.0 I(Oper.) Typ.(A) Oper. Current500m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB6839D
Power100m
Current500m
gunn diode
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Untitled
Abstract: No abstract text available
Text: ML4941 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)27G Frequency Max. (Hz)32G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage6.5 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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ML4941
Power200m
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Untitled
Abstract: No abstract text available
Text: DC1204E Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current130m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DC1204E
Power30m
Voltage15
Current130m
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Untitled
Abstract: No abstract text available
Text: DGB8241 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)24.5G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current220m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DGB8241
Power20m
Current220m
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Untitled
Abstract: No abstract text available
Text: DC1204C Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current130m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DC1204C
Power20m
Voltage15
Current130m
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Untitled
Abstract: No abstract text available
Text: MA49190-118 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power10m Frequency Min. (Hz)18G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage7.0 I(Oper.) Typ.(A) Oper. Current250m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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MA49190-118
Power10m
Current250m
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Untitled
Abstract: No abstract text available
Text: DGB8244 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)24.5G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current220m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB8244
Power20m
Current220m
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Untitled
Abstract: No abstract text available
Text: DGB8255 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)26.5G Frequency Max. (Hz)40G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current300m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB8255
Power20m
Current300m
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Untitled
Abstract: No abstract text available
Text: MA49178-118 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power250m Frequency Min. (Hz)18G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage8.0 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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MA49178-118
Power250m
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Untitled
Abstract: No abstract text available
Text: DGB6848D Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power100m Frequency Min. (Hz)40G Frequency Max. (Hz)60G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage3.5 I(Oper.) Typ.(A) Oper. Current1.2 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB6848D
Power100m
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Untitled
Abstract: No abstract text available
Text: TEO124 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power300m Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StyleN/A Mounting Style-
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TEO124
Power300m
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Untitled
Abstract: No abstract text available
Text: ML4971 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power60m Frequency Min. (Hz)50G Frequency Max. (Hz)60G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.5 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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ML4971
Power60m
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Untitled
Abstract: No abstract text available
Text: DGB8213 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current150m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB8213
Power20m
Voltage12
Current150m
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Untitled
Abstract: No abstract text available
Text: MA49193-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power75m Frequency Min. (Hz)40G Frequency Max. (Hz)50G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.5 I(Oper.) Typ.(A) Oper. Current1.4 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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MA49193-138
Power75m
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Untitled
Abstract: No abstract text available
Text: DC1226F Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power50m Frequency Min. (Hz)26G Frequency Max. (Hz)40G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current700m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DC1226F
Power50m
Current700m
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Untitled
Abstract: No abstract text available
Text: MA49173-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power100m Frequency Min. (Hz)26G Frequency Max. (Hz)40G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage6.0 I(Oper.) Typ.(A) Oper. Current1.2 Semiconductor Material Package StyleScrew Mounting StyleT
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MA49173-138
Power100m
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Untitled
Abstract: No abstract text available
Text: VSQ9119S1N34 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power150m Frequency Min. (Hz)42G Frequency Max. (Hz)46G Efficiency Min.9.0 V(Oper.) Nom.(V) Oper. Voltage11 I(Oper.) Typ.(A) Oper. Current170m Semiconductor MaterialInP Package StyleScrew Mounting StyleT
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VSQ9119S1N34
Power150m
Voltage11
Current170m
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Untitled
Abstract: No abstract text available
Text: TEPO25 Diodes Pulse-Mode Gunn Diode P o Min.(W) Output Power30 Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current7.0 Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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TEPO25
Power30
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Untitled
Abstract: No abstract text available
Text: GC5647A Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)4.0G Frequency Max. (Hz) Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current530m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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GC5647A
Power200m
Voltage15
Current530m
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Untitled
Abstract: No abstract text available
Text: DGB8211 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current150m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DGB8211
Power20m
Voltage12
Current150m
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Untitled
Abstract: No abstract text available
Text: DGB8112 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power800m Frequency Min. (Hz)5G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DGB8112
Power800m
Voltage12
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gunn diode generator
Abstract: No abstract text available
Text: GEC P L E S S E Y CT3513-1.2 GUNN DIODES - INTRODUCTION INTRODUCTION 1.1. Basic Gunn Diode Action There are two energy levels A and B— also known as Valleys—with the following properties: The variation of current with field for a perfect two terminal gallium arsenide device is shown in simplified form in Fig.1.
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CT3513-1
gunn diode generator
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