AN5205
Abstract: Gunn Diode at power supply circuit gunn diode radar gunn diodes Gunn Diode gunn diode oscillator diode gunn gunn diode radar module radar gunn diode AN5205-2
Text: AN5205 AC2001 - 77 GHz Gunn Oscillator Module Application Note AN5205-2.0 July 1999 Electric field breakdown of a Gunn diode is related to the 'nl' product of the device doping level multiplied by the active length . The Gunn diode used in the AC2001 is normally operated at about 5 to 7V, whereas voltage
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AN5205
AC2001
AN5205-2
AC2001
AN5205
Gunn Diode at power supply circuit
gunn diode radar
gunn diodes
Gunn Diode
gunn diode oscillator
diode gunn
gunn diode radar module
radar gunn diode
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diode b34
Abstract: Gunn Diode gunn diodes NJX4410 x-band motion detector 4420H gunn effect b34 diode diode a4t gunn diode oscillator
Text: NEW JAPAN RA D I O CO LTD MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POW ER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw or pulsed mode osillators. These Gunn diodes utilizing the bulk negative resistance effect can be easily obtained microwave
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000117b
NJX40Q0
NJX4000
NJX4402,
diode b34
Gunn Diode
gunn diodes
NJX4410
x-band motion detector
4420H
gunn effect
b34 diode
diode a4t
gunn diode oscillator
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gunn diodes
Abstract: DC1279F-T Gunn Diode gunn diode datasheet 10 GHz gunn diode DC1200-T gunn diode marconi Marconi gunn DC1278F-T DC1279D
Text: Millimetre Wave Graded Gap Gunn Diodes The DC1200-T series extends the range of high power, graded gap, GaAs CW Gunn diodes further into the millimetre wave frequency band. They offer superior stability where low df/dt, low df/dv and cold start turn-on are at a premium.
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DC1200-T
DC1276F-T
DC1276G-T
DC1276H-T
DC1276J-T
DC1277D-T
DC1277E-T
DC1277F-T
DC1277G-T
gunn diodes
DC1279F-T
Gunn Diode
gunn diode datasheet
10 GHz gunn diode
gunn diode marconi
Marconi gunn
DC1278F-T
DC1279D
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Gunn Diode MA49156
Abstract: GaAs Gunn Diode 24 gunn diodes Gunn Diode e band x band gunn diode X-band marine radar gunn diode x band radar Gunn Diode 72 GHz MA49172 MA49156
Text: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is
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MA49000
MA49000
Gunn Diode MA49156
GaAs Gunn Diode 24
gunn diodes
Gunn Diode e band
x band gunn diode
X-band marine radar
gunn diode x band radar
Gunn Diode 72 GHz
MA49172
MA49156
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Untitled
Abstract: No abstract text available
Text: HUGHES/ MICROWAVE PRDTS 1 TE D m 41313303 OOOOaiO =1 Gunn Diodes _ T :07-i| _ Hughes 4720xH series of GaAs Gunn Diodes are available for operation at any specified frequency between 26.5 and 95 GHz. Power output levels range from 20 mW at 95 GHz to
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4720xH
035-inch
4720xH-04xx
100mW
150mW
250mW
350mW
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Untitled
Abstract: No abstract text available
Text: P ^p jlG E C P L E S S E Y DS3420-1.2 DC1270/1220 Series MILLIMETRE WAVE GUNN DIODES STANDARD AND GRADED GAP The introduction of the DC1270/DC1220 Series extends the range of high power standard and graded-gap GaAs CW Gunn diodes further into the millimetre wave frequency
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DS3420-1
DC1270/1220
DC1270/DC1220
DC1279D
DC1279F-T
DC1276Tand
DC1277
DC1278
DC1279
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Gunn Diode MA49156
Abstract: gunn diodes MA49156 MA49148 MA49000 gunn diode x band radar x-band gunn diode MA49508 MA49152 Gunn Diode e band
Text: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is
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MA49000
MA49000
Gunn Diode MA49156
gunn diodes
MA49156
MA49148
gunn diode x band radar
x-band gunn diode
MA49508
MA49152
Gunn Diode e band
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PDF
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Gunn Diode
Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
Text: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property
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gunn diodes
Abstract: AH443 GUNN impatt DH385 AH365 DH378 AH152 AH802 GaAs p-i-n diodes
Text: DIODES SELECTION GUIDE P R O D U C T S REF. D E S C R IP T IO N AH152 to AH 169 GaAs Abrupt tuning Varactors AH202 to AH240 GaAs Hyperabrupt tuning Varactors AH365 to AH380 GaAs Gunn Diodes 18-26GHz AH443 to AH497 GaAs Gunn Diodes (9-18GHZ) AH501 to AH539
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AH152
18-26GHz)
9-18GHZ)
10-16GHz)
94GHz
AH202
AH240
AH365
AH380
gunn diodes
AH443
GUNN
impatt
DH385
DH378
AH802
GaAs p-i-n diodes
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gunn diode generator
Abstract: No abstract text available
Text: GEC P L E S S E Y CT3513-1.2 GUNN DIODES - INTRODUCTION INTRODUCTION 1.1. Basic Gunn Diode Action There are two energy levels A and B— also known as Valleys—with the following properties: The variation of current with field for a perfect two terminal gallium arsenide device is shown in simplified form in Fig.1.
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CT3513-1
gunn diode generator
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gunn diodes
Abstract: gunn 4411 gunn diode 10.5 ghz
Text: NE W J A P A N R A D I O CO L T D MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POWER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw
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NJX40Q0
NJX4000
NJX4402,
CX4410,
4420U
NJX4410,
4420U
NJX4621
gunn diodes
gunn
4411
gunn diode 10.5 ghz
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ML4942
Abstract: ML4953
Text: M L 4000 SERIES HIGH FREQUENCY CW GUNN DIODES - 18 TO 100GHZ This series o f high frequency Gunn diodes features low noise both AM and FM , good efficiency and one-step conversion from dc to microwave energy using a single, low voltage power supply. These devices are ideally suited for use as param p pump sources and as transm itters
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100GHZ
ML4942
ML4953
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CXY11C
Abstract: gunn effect gunn diode 10.5 ghz CXY11a Gunn Diode CXY11B CXY11 10 GHz gunn diode Mullard CXY11B cxyiia
Text: GUNN EFFECT DEVICES CXYIIA CXYIIB CXYMC T E N T A T IV E D A T A G allium a rsen id e bulk effect devices em ploying the Gunn effect to produce CW oscillatio n s at m icrow ave fre q u e n c ie s. Each device is encapsulated in a v a ra c to r type p ill package suitable for m ounting in v a rio u s types of cavity.
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IB8665Iwer
CXY11B/10
12GHz
CXY11A/8
CXY11A
CXY11A/10
CXY11A/11
CXY11B/8
CXY11B
CXY11C
gunn effect
gunn diode 10.5 ghz
Gunn Diode
CXY11
10 GHz gunn diode
Mullard CXY11B
cxyiia
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MA49156
Abstract: Gunn Diode MA49156 x-band gunn diode MA49508 Gunn Diode x band gunn diode Gunn Diode 72 GHz gunn diode x band radar gunn diodes klystron
Text: MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO WAVEGUIDE, COAXIAL, MICROSTRIP OR STRIPLINE TRANSMISSION
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MA49000
MA49139
MA49110
MA49156
Gunn Diode MA49156
x-band gunn diode
MA49508
Gunn Diode
x band gunn diode
Gunn Diode 72 GHz
gunn diode x band radar
gunn diodes
klystron
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gunn diode datasheet
Abstract: gunn diodes gunn diode marconi Marconi gunn Gunn Diode marcon DC1251F DC1251G DC1251H DC1251J
Text: High Power Gunn Diodes Gallium Arsenide bulk effect devices for CW power generation in the range 4 to 40 GHz * Low cost * High reliability * Custom devices available Minimum Typical Typical operating operating Frequency output band power voltage current Outline
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DC1253F
DC1253G
DC1253H
DC1283F
DC1283G
DC1283H
DC1251F
DC1251G
DC1251H
DC1251J
gunn diode datasheet
gunn diodes
gunn diode marconi
Marconi gunn
Gunn Diode
marcon
DC1251F
DC1251G
DC1251H
DC1251J
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gunn diode datasheet
Abstract: MARCONI DC1201C Gunn Diode DC1201A marcon DC1203B DC1201E gunn diode marconi DC1203A DC1203C
Text: Low Power Gunn Diodes Gallium Arsenide bulk effect devices for CW power generation in the range 4 to 26 GHz * Low cost * Low operating current * Custom devices available Minimum Typical Typical operating Frequency output operating band power voltage current
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DC1203A
DC1203B
DC1203C
DC1203D
DC1203E
DC1233A
DC1233B
DC1233C
DC1233D
DC1233E
gunn diode datasheet
MARCONI DC1201C
Gunn Diode
DC1201A
marcon
DC1203B
DC1201E
gunn diode marconi
DC1203A
DC1203C
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Untitled
Abstract: No abstract text available
Text: MA49192-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power10m Frequency Min. (Hz)40G Frequency Max. (Hz)60G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.0 I(Oper.) Typ.(A) Oper. Current300m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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MA49192-138
Power10m
Current300m
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gunn diode
Abstract: No abstract text available
Text: DGB6839D Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power100m Frequency Min. (Hz)12.4G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage8.0 I(Oper.) Typ.(A) Oper. Current500m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB6839D
Power100m
Current500m
gunn diode
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Untitled
Abstract: No abstract text available
Text: ML4941 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)27G Frequency Max. (Hz)32G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage6.5 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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ML4941
Power200m
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Untitled
Abstract: No abstract text available
Text: DC1204E Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current130m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DC1204E
Power30m
Voltage15
Current130m
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Untitled
Abstract: No abstract text available
Text: DGB8241 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)24.5G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current220m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DGB8241
Power20m
Current220m
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Untitled
Abstract: No abstract text available
Text: DC1204C Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current130m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DC1204C
Power20m
Voltage15
Current130m
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Untitled
Abstract: No abstract text available
Text: MA49190-118 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power10m Frequency Min. (Hz)18G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage7.0 I(Oper.) Typ.(A) Oper. Current250m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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MA49190-118
Power10m
Current250m
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Untitled
Abstract: No abstract text available
Text: DGB8244 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)24.5G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current220m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB8244
Power20m
Current220m
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