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    STMicroelectronics STGWT60H65DFB

    IGBT TRENCH FS 650V 80A TO-3P
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    STMicroelectronics STGWT60H65DFB 474 1
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    TME STGWT60H65DFB 139 1
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    GWT60H65DFB Datasheets Context Search

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    GW60H65DFB

    Abstract: No abstract text available
    Text: STGW60H65DFB GWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB PDF

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DFB GWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		STGW60H65DFB STGWT60H65DFB O-247 DocID024365 PDF

    GW60H65DFB

    Abstract: GWT60H65DFB STGW60H65DFB fieldstop igbt GW60 AM01507v1
    Text: STGW60H65DFB GWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V


    Original     		STGW60H65DFB STGWT60H65DFB O-247 DocID024365 GW60H65DFB GWT60H65DFB fieldstop igbt GW60 AM01507v1 PDF

    Untitled

    Abstract: No abstract text available
    Text: STGW60H65DFB GWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		STGW60H65DFB STGWT60H65DFB O-247 DocID024365 PDF