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    H11B1 V Search Results

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    H11B1 V Price and Stock

    onsemi H11B1VM

    OPTOISO 4.17KV DARL W/BASE 6DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11B1VM Tube 1,112 1
    • 1 $1.24
    • 10 $1.24
    • 100 $1.24
    • 1000 $0.40846
    • 10000 $0.34474
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    Avnet Americas H11B1VM Bulk 15 Weeks 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.29108
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    Mouser Electronics H11B1VM 885
    • 1 $1.13
    • 10 $0.589
    • 100 $0.505
    • 1000 $0.384
    • 10000 $0.322
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    Newark H11B1VM Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.429
    • 10000 $0.336
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    Everlight Electronics Co Ltd H11B1-V

    OPTOISO 5KV DARL W/BASE 6DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H11B1-V Tube 195
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    • 100 -
    • 1000 $0.49123
    • 10000 $0.49123
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    Avnet Americas H11B1-V Reel 195
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    • 100 -
    • 1000 $0.32069
    • 10000 $0.32069
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    onsemi H11B1SR2VM

    Transistor Output Optocouplers Photodarlington
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics H11B1SR2VM 736
    • 1 $0.95
    • 10 $0.599
    • 100 $0.399
    • 1000 $0.298
    • 10000 $0.254
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    Carling Technologies AVH1-1B16-RENA

    Pushbutton Switches AVH1-1B16-RENA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AVH1-1B16-RENA
    • 1 $87.25
    • 10 $79.49
    • 100 $66.4
    • 1000 $66.4
    • 10000 $66.4
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    Fairchild Semiconductor Corporation H11B1VM

    Darlington Output Optocoupler, 7500V Isolation '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics H11B1VM 1,459 1
    • 1 $0.2497
    • 10 $0.2497
    • 100 $0.2347
    • 1000 $0.2122
    • 10000 $0.2122
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    H11B1 V Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H11B1-V Everlight Electronics Isolators - Optoisolators - Transistor, Photovoltaic Output - OPTOISO 5KV DARL W/BASE 6DIP Original PDF
    H11B1VM Fairchild Semiconductor 6-Pin DIP Photodarlington Output Optocoupler; Package: DIP-W; No of Pins: 6; Container: Bulk Original PDF

    H11B1 V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    H11B1

    Abstract: H11B3
    Text: MOTOROLA Order this document by H11B1/D SEMICONDUCTOR TECHNICAL DATA H11B1 * [CTR = 500% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Darlington Output Low Input Current H11B3 [CTR = 100% Min] *Motorola Preferred Device The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting


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    H11B1/D H11B1 H11B3 H11B1 H11B3 H11B1/D* PDF

    H11B1

    Abstract: H11B2 H11B3
    Text: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with


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    H11B1/H11B2/H11B3 H11B1, H11B2, H11B3, E52744 H11B1/H11B2/H11B3 17-August-01 H11B1 H11B2 H11B3 PDF

    optocoupler H11b1

    Abstract: H11B1 H11B2 H11B3
    Text: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with


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    H11B1/H11B2/H11B3 H11B1, H11B2, H11B3, E52744 H11B1/H11B2/H11B3 1-888-Infineon H11B1/2/3 optocoupler H11b1 H11B1 H11B2 H11B3 PDF

    H11B1

    Abstract: H11B2 H11B3
    Text: g y, , H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at IF = 1.0 mA H11B1, 500% H11B2, 200% H11B3, 100% • Isolation Test Voltage, 5300 VRMS • Coupling Capacitance, 0.5 pF • Underwriters Lab File #E52744 • V VDE Approval #0884 Available with


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    H11B1/H11B2/H11B3 H11B1, H11B2, H11B3, E52744 H11B1/H11B2/H11B3 H11B1/2/3 H11B1 H11B2 H11B3 PDF

    EL4N33

    Abstract: H11BX 4N33 4N32 4n33 schematic 4N31 H11B1 4N29 4N30 E214129
    Text: TIL113 4NXX Series H11BX Series 6 PIN PHOTODARLINGTON PHOTOCOUPLER Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N33 • H11BX series: H11B1, H11B2, H11B3, H11B255 • High isolation voltage between input and output Viso=5000 V rms • Creepage distance >7.62 mm


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    TIL113 H11BX H11B1, H11B2, H11B3, H11B255 E214129) TIL113, EL4N33 4N33 4N32 4n33 schematic 4N31 H11B1 4N29 4N30 E214129 PDF

    optocouplers 501 IC

    Abstract: TIL113 CNX48U
    Text: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current


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    CNX48U, H11BX, MOC8080 TIL113 CNX48U H11B1 TIL113 H11B2 H11B255 optocouplers 501 IC PDF

    H11BX

    Abstract: CNX48U H11B255 optocouplers 501 H11B1 H11B2 H11B3 MOC8080 TIL113
    Text: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current


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    CNX48U, H11BX, MOC8080 TIL113 CNX48U H11B1 TIL113 H11B2 H11B255 H11BX CNX48U H11B255 optocouplers 501 H11B1 H11B2 H11B3 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current


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    CNX48U, H11BX, MOC8080 TIL113 CNX48U H11B1 TIL113 H11B2 H11B255 PDF

    h11b255

    Abstract: CNX48U
    Text: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current


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    CNX48U, H11BX, MOC8080 TIL113 CNX48U H11B1 TIL113 H11B2 H11B255 h11b255 PDF

    optocouplers 501

    Abstract: H11BX CNX48U TIL113 H11B1 H11B255 optocouplers 501 IC H11B2 H11B3 MOC8080
    Text: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current


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    CNX48U, H11BX, MOC8080 TIL113 CNX48U H11B1 TIL113 H11B2 H11B255 optocouplers 501 H11BX CNX48U H11B1 H11B255 optocouplers 501 IC H11B2 H11B3 PDF

    E91231

    Abstract: H11B H11B1 H11B1X H11B2 H11B2X H11B3 H11B3X
    Text: H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT UL recognised, File No. E91231 l 6.4 6.2 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead form : - STD - G form VDE 0884 in SMD approval pending l SETI approved, reg. no.151786-18


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    H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3 E91231 ins50 DB92167-AAS/A2 E91231 H11B H11B1 H11B1X H11B2 H11B2X H11B3 H11B3X PDF

    E91231

    Abstract: H11B H11B1 H11B1X H11B2 H11B2X H11B3 H11B3X
    Text: H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT UL recognised, File No. E91231 l 6.4 6.2 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead form : - STD - G form VDE 0884 in SMD approval pending l SETI approved, reg. no.151786-18


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    H11B1X, H11B2X, H11B3X H11B1, H11B2, H11B3 E91231 instru50 DB92167-AAS/A2 E91231 H11B H11B1 H11B1X H11B2 H11B2X H11B3 H11B3X PDF

    Untitled

    Abstract: No abstract text available
    Text: H11B1/H11B2/H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES • Isolation test voltage: 5300 VRMS A 1 6 B C 2 5 C • Lead Pb -free component NC 3 4 E • Component in accordance to RoHS 2002/95/EC


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    H11B1/H11B2/H11B3 2002/95/EC 2002/96/EC i179005 H11B1/H11B2/H11B3 UL1577, E52744 H11B1 H11B2 H11B3 PDF

    optocoupler H11b1

    Abstract: No abstract text available
    Text: H11B1, H11B2, H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, with Base Connection FEATURES • Isolation test voltage: 5300 VRMS A 1 6 B C 2 5 C • Lead Pb -free component NC 3 4 E • Component in accordance to RoHS 2002/95/EC


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    H11B1, H11B2, H11B3 2002/95/EC 2002/96/EC i179005 H11B3 UL1577, optocoupler H11b1 PDF

    Untitled

    Abstract: No abstract text available
    Text: H11B1/H11B2/H11B3 Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection FEATURES • Isolation test voltage: 5300 VRMS • Coupling capacitance, 0.5 pF • Lead Pb -free component A 1 6 B C 2 5 C NC 3 4 E • Component in accordance to RoHS 2002/95/EC


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    H11B1/H11B2/H11B3 2002/95/EC 2002/96/EC i179005 H11B1/H11B2/H11B3 UL1577, E52744 VDE0884) H11B1 H11B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS tfi] DESCRIPTION [& The H11B series consists of a gallium arsenide infrared em itting diode, coupled with a silicon photodarlington transistor in a dual in-line package. FEATURES


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    H11B1 H11B2 H11B3 H11B2 H11B3 E90700 ST1603A ST1731 ST1732 PDF

    ST1736

    Abstract: optocouplers H11B1
    Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES


    OCR Scan
    H11B1 H11B2 H11B3 H11B3 E90700 H11B1) H11B2) H11B3) ST1736 optocouplers H11B1 PDF

    H11B1

    Abstract: H11B2 VDE0160 VDE0832 VDE0833
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica­


    OCR Scan
    E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, 30A-02 H11B1 H11B2 VDE0160 VDE0832 VDE0833 PDF

    Untitled

    Abstract: No abstract text available
    Text: csxa PHOTODARUNGTON OPTOCOUPLERS s m E u m s iic s H11B1 H11B2 H11B3 The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-fine package High current transfer ratio H1181 -500% mtn.


    OCR Scan
    H11B1 H11B2 H11B3 H1181 H11B3 E90700 ST1603A H11B1) H11B2) PDF

    Untitled

    Abstract: No abstract text available
    Text: H11B1/H11B2/H11B3 Photodarlington Optocoupler FEATURES • CTR Minimum at Ip = 1.0 mA H11 B1, 500% H11 B2, 200% H 1 1 B 3 ,100% • Isolation Test Voltage, 5300 V RMS D im ensions in inches mm pin one ID lai 121 Î .248 (6.30) .256 (6.50) • Coupling Capacitance, 0.5 pF


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    H11B1/H11B2/H11B3 E52744 H11B1/2/3 PDF

    Untitled

    Abstract: No abstract text available
    Text: H11B1 H11B2 H11B3 O P T O C O U P L E R S Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • Very high output/input DC current transfer ratio • Isolation voltage o f 2 kV RMS and 2.82 kV DC


    OCR Scan
    H11B1 H11B2 H11B3 0110b bbS3T31 D03SSD4 PDF

    PS2004B

    Abstract: PS2004 4N29 4N30 4N32 4N33 4N38 FCD850 FCD855 FCD860
    Text: — fiumu LE D -D arlin g to n Transistor with Base Connection LED- 2" — U > h > • 7 * h • è uj $1 PS2004B PS2014 MFCD850 4N29 4N30 4N31 4N32 4N33 4N38 FCD850 FCD855 FCD860 FCD865 H11B1 H11B2 MCA230 MCA231 # i i -6 jF 50 i 'J 'J # JED E C 80 60 80


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    PS2004B PS2014 MFCD850 H11B1 H11B2 MCA230 MCA231 MCA255 TIL113 TIL119 PS2004B PS2004 4N29 4N30 4N32 4N33 4N38 FCD850 FCD855 FCD860 PDF

    FF 030 PK

    Abstract: led ir Darlington pair IC schematic 4n33 schematic H11B1 H11G1 H11G2 H11G3 H24B1 H24B3
    Text: ISOCOM COMPONENTS Photo Darlington With Base Lead Part N u m b er Fea tu res Iso la tio n V o lta g e VDC C u rren t T ra n s fe r R a tio M in % H11B1 M C A255 IS662 Ir = lO fiA M a x (V ) (D ark) VcE(Sat) M ax (v) V ce = 1 0 V ( lc = ( lc = 1000 1m A )


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    10jiA H11B1 MCA255 IS660 100mA) IS661 IS662 H11G1 H11G2 FF 030 PK led ir Darlington pair IC schematic 4n33 schematic H11G1 H11G2 H11G3 H24B1 H24B3 PDF

    Untitled

    Abstract: No abstract text available
    Text: H11B1/H11B2/H11B3 SIEMENS FEATURES * CTR M in im u m at l F = 1 m A H 1 1 B 1 ,500% H11 B 2 ,2 0 0 % PHOTODARLINGTON OPTOCOUPLER Package Dimensions in Inches mm I?1 Ù ] f?l Anode [ E .248(6.30) 256 (6.50) J D Base i Cathode (~2 _ J H 1 1 B 3 ,100%, * W ith s ta n d T e s t V o lta g e , 7500 V o lt


    OCR Scan
    E52744 11B1/H11B2/H1183 H11B1/2/3 PDF