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    H11D1 MOTOROLA Search Results

    H11D1 MOTOROLA Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    AS839 Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc
    AS8397- Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc

    H11D1 MOTOROLA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    H11D1

    Abstract: H11D2 MOTOROLA 813 transistor
    Text: MOTOROLA Order this document by H11D1/D SEMICONDUCTOR TECHNICAL DATA H11D1 * GlobalOptoisolator H11D2 6-Pin DIP Optoisolators High Voltage Transistor Output 300 Volts [CTR = 20% Min] *Motorola Preferred Device STYLE 1 PLASTIC The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes


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    H11D1/D H11D1 H11D2 H11D1 H11D2 H11D1/D* MOTOROLA 813 transistor PDF

    MOTOROLA 813 transistor

    Abstract: h11d1 motorola transistor 813 motorola QT Optoelectronics H11D1 H11D2
    Text: QT Optoelectronics MOTOROLA Order this document by H11D1/D SEMICONDUCTOR TECHNICAL DATA H11D1 * GlobalOptoisolator H11D2 6-Pin DIP Optoisolators High Voltage Transistor Output 300 Volts [CTR = 20% Min] *Motorola Preferred Device STYLE 1 PLASTIC The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes


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    H11D1/D H11D1 H11D2 H11D1 H11D2 H11D1/D* MOTOROLA 813 transistor h11d1 motorola transistor 813 motorola QT Optoelectronics PDF

    CNY37

    Abstract: MCP3040 4n33 and 4n35 mct81 MRD901 4N25 CROSS MOC70T-1 MOC70T1 moc3020 datasheet application notes CQX47
    Text: CR104/D GENERAL INSTRUMENT-TO-MOTOROLA OPTOELECTRONICS CROSS REFERENCE ISOLATORS General Instrument MOTOROLA Code General Instrument MOTOROLA Code 4N25, A 4N25, A A MCP3009, 10 MOC3009, 10 A 4N26 4N26 A MCP3011, 3011A MOC3011 A 4N27 4N27 A MCP3012 MOC3012


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    CR104/D MCP3009, MOC3009, MCP3011, MOC3011 MCP3012 MOC3012 MCP3020, MOC3020, MCP3022, CNY37 MCP3040 4n33 and 4n35 mct81 MRD901 4N25 CROSS MOC70T-1 MOC70T1 moc3020 datasheet application notes CQX47 PDF

    H11B817

    Abstract: H11L1M Triac 4N35 0811 triac optocouplers 4n35 4N32 pinout H11B817B motorola triac catalog
    Text: Fairchild Semiconductor Optoelectronic Components Optoelectronic Components All optoisolators are UL recognized under file number E90700 and are also available with VDE approval to specification 0884/6.60 certificate number 35025. -M white package, formerly Motorola.


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    E90700 MCT62 HCPL-0500 H11G1 H11G2 H11G3 H11AA1 H11AA4 H11AA814 H11C1 H11B817 H11L1M Triac 4N35 0811 triac optocouplers 4n35 4N32 pinout H11B817B motorola triac catalog PDF

    IRF 3250

    Abstract: IRf 334 irf 1402 irf 2117 cry 152 H22B1 EFG13C ec75 HFA16PB120 FA57SA50LC
    Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor


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    EC350 G2-1B02-TT H23LTI HCTL-2016 220N60C3D G2-1A05-TT H21A1 HCPL-4506 HGTG30N60C3 G2-1A06-ST IRF 3250 IRf 334 irf 1402 irf 2117 cry 152 H22B1 EFG13C ec75 HFA16PB120 FA57SA50LC PDF

    opto transistor moc

    Abstract: MOCD211 H11AA1M MOCD211R2 D211 OPTO 4n33 4n25 H11AA4M MOC3081M 4N35M H11D1M
    Text: Dual Channel Small Outline Optoisolators MOCD211 Transistor Output The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high


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    MOCD211 E90700, InformC215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M opto transistor moc H11AA1M MOCD211R2 D211 OPTO 4n33 4n25 H11AA4M MOC3081M 4N35M H11D1M PDF

    optocoupler crossreference

    Abstract: fairchild optocoupler cross reference MOC256 H11AA1M H11AA2M MOTOROLA Cross Reference Search H11L1M H11AA4M MOC3062M MOC3081M
    Text: AC Input Phototransistor Small Outline Surface Mount Optocoupler MOC256 The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the


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    MOC256 E90700, InputC215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M optocoupler crossreference fairchild optocoupler cross reference H11AA1M H11AA2M MOTOROLA Cross Reference Search H11L1M H11AA4M MOC3062M MOC3081M PDF

    D217 OPTO

    Abstract: MOC 4N25 MOCD217 Opto Coupler 4N33 MOCD217R2M 4N33 "cross reference" moc opto h11d1 motorola MOC3041-M application notes 4N25A
    Text: Dual Channel Small Outline Optoisolators MOCD217 Transistor Output Low Input Current The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high


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    MOCD217 RS481A InpC215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M D217 OPTO MOC 4N25 Opto Coupler 4N33 MOCD217R2M 4N33 "cross reference" moc opto h11d1 motorola MOC3041-M application notes 4N25A PDF

    D223 OPTO

    Abstract: darlington optocoupler cross reference MOCD217M H11AA2M MOC8204M H11AA4M H11G2M MOC3081M H11D1M 4N32M
    Text: Dual Channel Small Outline Optoisolators MOCD223 Darlington Output The MOCD223 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline, plastic package. It is ideally


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    MOCD223 3C215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M MOC3081-M D223 OPTO darlington optocoupler cross reference MOCD217M H11AA2M MOC8204M H11AA4M H11G2M MOC3081M H11D1M 4N32M PDF

    MOC223

    Abstract: MOCD223M H11AA2M MOC 4N25 MOC223R2M H11AA4M MOC3062M MOC3081M 4N35M H11D1M
    Text: Small Outline Optoisolators MOC223 Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density


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    C215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M MOC3081-M MOC3163-M MOC223 MOCD223M H11AA2M MOC 4N25 MOC223R2M H11AA4M MOC3062M MOC3081M 4N35M H11D1M PDF

    MOTOROLA OPTOELECTRONIC ic pin diagram

    Abstract: triac driver opto moc3021 opto d207 MCT2E soic D217 OPTO IC 4N25 triac 730A-04 a4n33 opto triac moc3010 MOC3041 opto isolator
    Text: Optoelectronic Devices In Brief . . . Motorola’s families of optoelectronic components encompass red and infrared GaAs emitters and silicon detectors that are well matched for a variety of applications. Optoisolators Motorola’s “Global” 6–Pin Dual In–line Package DIP


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    MOC2A60-5 MOC2A60-10 02/Style 01/Style MOTOROLA OPTOELECTRONIC ic pin diagram triac driver opto moc3021 opto d207 MCT2E soic D217 OPTO IC 4N25 triac 730A-04 a4n33 opto triac moc3010 MOC3041 opto isolator PDF

    H11D1M

    Abstract: motorola 4n35 MOCD208-M 17434 MOTOROLA 813 transistor CNY17 pulse circuit H11AA4M H11G2M H11AV1M MOC8050M
    Text: MOC8100 GlobalOptoisolator 6-Pin DIP Optoisolator Transistor Output The MOC8100 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. It is designed for applications requiring higher output collector current IC with lower input


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    MOC8100 C215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M MOC3081-M H11D1M motorola 4n35 MOCD208-M 17434 MOTOROLA 813 transistor CNY17 pulse circuit H11AA4M H11G2M H11AV1M MOC8050M PDF

    216 OPTO SO8

    Abstract: MOC216R1 motorola 4n35 Dual opto coupler IC SOIC 8 footprint MOC3052M MOC215/buy/GDZ4.3BD5 H11AA4M H11G2M MOC3081M
    Text: Transistor Output Low Input Current These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density


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    MOC215, andC215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M MOC3081-M 216 OPTO SO8 MOC216R1 motorola 4n35 Dual opto coupler IC SOIC 8 footprint MOC3052M MOC215/buy/GDZ4.3BD5 H11AA4M H11G2M MOC3081M PDF

    H11D1M

    Abstract: Dual opto coupler IC MOC3023-M 4N26-M MOC306 MOTOROLA Cross Reference Search H11AA4M 4N32M MOC8050M MOC223M
    Text: Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting.


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    MOC211, MOCC215-M MOC223-M MOC3011-M MOC3021-M MOC3031-M MOC3041-M MOC3051-M MOC3062-M MOC3081-M H11D1M Dual opto coupler IC MOC3023-M 4N26-M MOC306 MOTOROLA Cross Reference Search H11AA4M 4N32M MOC8050M MOC223M PDF

    PD3007

    Abstract: H11D12
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ®®®® *1 VDE UL CSA 8ETI 8EMK0 DEMMO NEMKO BAST GlobsìOptolsolator 6-Pin D IP O ptolsolators High Voltage Transistor Output 300 Volts H11D1* H11D2 [CTR • 20% Min] ‘Motorola Preferred Device The H11D1 and H11D2 consist of gallium arsenide Infrared emitting diodes


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    H11D1 H11D2 H11D1* H11D2 PD3007 H11D12 PDF

    MOTOROLA 813 transistor

    Abstract: h11d1 motorola PD3007
    Text: QT Optoelectronics SEMICONDUCTOR TECHNICAL DATA T O VDE UL & CSA Order this document by H11D1/D •i SET SEMKO DEMKO NEMKO BABT H 11D 1* Glob al Optoi solator H11D2 6-Pin DIP Optoisolators High Voltage TVansistor Output 300 Volts [CTR =20% Min] "Motorola Preferred Device


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    H11D1/D H11D2 H11D1 H11D2 MOTOROLA 813 transistor h11d1 motorola PD3007 PDF

    ED0A

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA < ^ > T O ŒL V0€ ui C SA SETI BS ® SE M K O O EM KO BAST NEMKO 6-Pin DIP Optoisolators High Voltage TVansistor Output 300 Volts H11D1* H11D2 [C TR a 2 0 % Min] ‘M otorola Preferred Device S T Y L E 1 P L A S T IC


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    H11D1 H11D1* H11D2 H11D1, ED0A PDF

    C3883

    Abstract: GE H11D2 verin VDE0833 H11D1 GE
    Text: MOTOROLA B SEMICONDUCTOR TECHNICAL DATA H11D1 H11D2 H11D3 H11D4 6-Pin DIP Optoisolators Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e , s ilico n , p h o to tra n s is to r d e te cto rs in a sta n d a rd 6-pin DIP package. T hey are d esig n ed fo r


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    H11D1 H11D3 E54915 C3883 GE H11D2 verin VDE0833 H11D1 GE PDF

    h11g1 case 730c-04

    Abstract: 730D-05 730c-04 MOC3081 H11AV1 C8100 730A-04 H11L1 Case 730A-04 MOC3Q51
    Text: Section 5 Optoisolators/Optocouplers Lead F orm T est O p tio n s .5-3 P ackage D im e n s io n s . 5-4 AC In p u t C o u p le r H11AA1


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    H11AA1 30A-04 730C-04 4N35Series CNY17-1 H11A1 MOC5007 MOC3010 MOC3020 MOC3Q51 h11g1 case 730c-04 730D-05 MOC3081 H11AV1 C8100 730A-04 H11L1 Case 730A-04 PDF

    H11D1

    Abstract: H11D3 VDE0113 VDE0160 VDE0832 VDE0833 VDE0883
    Text: MOTOROLA SE M IC O N D U C TO R TECHNICAL DATA H11D 1 H 11 D 2 H 11 D 3 H 11D 4 6 -P in D IP O p to is o la to rs Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e ,


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    H11D1 H11D3 E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE110b, 30A-02 VDE0113 VDE0160 VDE0832 VDE0833 VDE0883 PDF

    H1101

    Abstract: H1102 TIL127 4N29 4N30 4N31 H11B255 H11B3 MCA230 MOC8111
    Text: OPTOELECTRONICS — COUPLERS/ISOLATORS Style 1 : Pin 1. 2. 3. 4. 5. 6. continued CASE 730A-01 Anode Cathode NC Emitter Collector Base Style 3: Pin 1. 2. 3. 4. 5. 6. Anode Cathode NC Emitter Collector NC Transistor Output with No Base Connection — Style 3


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    30A-01 TIL118 MOC8111 MOC8112 MOC8205 MOC8206 H11D1 H11D2 H11D3 H11D4 H1101 H1102 TIL127 4N29 4N30 4N31 H11B255 H11B3 MCA230 PDF

    motorola til111

    Abstract: TIL112 H1101 A4N25A MOC1005 optocoupler MCT2E IC TIL 119 Optocoupler TIL157 H1102 7500
    Text: OPTOELECTRONICS continued Style 1: An optocoupler consists of a gallium arsenide infrared emitting diode, IRED, optically coupled to a monolithic silicon photo­ detector/output device in a light-shielding package. Motorola of­ fers a wide array of standard devices in the popular 6-pin DIP


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    30A-01 miA204 MOC8205 MOC8206 H11D1 H11D2 H11D3 H11D4 4N38A MCT275 motorola til111 TIL112 H1101 A4N25A MOC1005 optocoupler MCT2E IC TIL 119 Optocoupler TIL157 H1102 7500 PDF

    mcp3021z

    Abstract: P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler
    Text: PHOTOCOUPLER CROSS REFERENCE For user’s convenience, the Sharp equivalents in comparison with the other m anufacturers’ products are suggested in this list. The data is prepared on the basis of main electrical and mechanical characteristics, however, Sharp assumes no responsibility for the actual use of the data and for the specifications of other


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    LP666J LP721 TLP721F LP731 TLP732 PC918 PC702V PC714V mcp3021z P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler PDF

    triac driver opto moc3021

    Abstract: MOC3000 ic moc3041 C6550 driver circuit MCT2E A4N25A motorola til111 MOC3061 h11av1a 4n40 opto coupled scr
    Text: MO TO R O L A SC -CDIODES/OPTO} 1SE D I L,3b755S D D Û D 0 D 1 Optoisolators T M \ - % S | 3 Case 730A-02 A n optoisolator con sists of a gallium arsenide infrared em itting diode, IRED, optically coupled to a m onolithic silic o n p h o to -d e te cto r in a lig h t -s h ie ld in g p ack age .


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    3b755S 30A-02 OJJ20 730B-02 730C-02 730D-Q2 triac driver opto moc3021 MOC3000 ic moc3041 C6550 driver circuit MCT2E A4N25A motorola til111 MOC3061 h11av1a 4n40 opto coupled scr PDF