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    H55S1262EFP

    Abstract: No abstract text available
    Text: 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128MBit 8Mx16bit) 128Mbit H55S1262EFP 16bits 200us

    H5TQ2G63BFR-H9C

    Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
    Text: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9


    Original     		PDF 256Mx4 H5TQ1G43BFR-H9C 78ball) H5TQ1G43TFR-H9C H5TQ1G43BFR-G7C H5TQ1G43TFR-G7C H5TQ1G83BFR-H9C H5TQ2G63BFR-H9C H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR

    Untitled

    Abstract: No abstract text available
    Text: 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128MBit 8Mx16bit) 128Mbit H55S1262EFP 16bits 200us

    H55S1262EFP

    Abstract: No abstract text available
    Text: 128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128MBit 8Mx16bit) 128Mbit H55S1262EFP 16bits 200us