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    HAT1072H Search Results

    HAT1072H Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    HAT1072H-EL-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -40A 4.5Mohm Lfpak Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation HAT1072H-EL-E

    MOSFET P-CH 30V 40A LFPAK
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    HAT1072H Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HAT1072H Renesas Technology Silicon P Channel Power MOS FET Original PDF
    HAT1072H Renesas Technology Silicon P Channel Power MOS FET Power Switching Original PDF
    HAT1072H Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 40A 5LFPAK Original PDF
    HAT1072H-EL-E Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 40A LFPAK Original PDF

    HAT1072H Datasheets Context Search

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    HAT1072H

    Abstract: No abstract text available
    Text: HAT1072H Silicon P Channel Power MOS FET Power Switching REJ03G1155-0700 Previous: ADE-208-1534E Rev.7.00 Sep 07, 2005 Features • • • • Capable of –4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 3.6 mΩ typ (at VGS = –10 V)


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    PDF HAT1072H REJ03G1155-0700 ADE-208-1534E) PTZZ0005DA-A HAT1072H

    HAT1072H

    Abstract: P Channel Power MOS FET Power Switching Hitachi DSA0044
    Text: HAT1072H Silicon P Channel Power MOS FET Power Switching ADE-208-1534E Z 6th. Edition May 2002 Features • Capable of -4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 3.6 mΩ typ (at VGS = -10 V) Outline


    Original
    PDF HAT1072H ADE-208-1534E HAT1072H P Channel Power MOS FET Power Switching Hitachi DSA0044

    HAT1072H

    Abstract: No abstract text available
    Text: HAT1072H Silicon P Channel Power MOS FET Power Switching REJ03G1155-0700 Previous: ADE-208-1534E Rev.7.00 Sep 07, 2005 Features • • • • Capable of –4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 3.6 mΩ typ (at VGS = –10 V)


    Original
    PDF HAT1072H REJ03G1155-0700 ADE-208-1534E) PTZZ0005DA-A HAT1072H

    HAT1072H

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


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    PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    HAT1072H

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original
    PDF

    HAT1072H

    Abstract: ADE-208-153
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


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    PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    1002ds

    Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
    Text: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5


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    PDF 24EMP BRC124ETP BRC143ETP BRC144ECM CR3KM-12 FS10KM-6 FS10VS-6 FS16KM-6 FS16VS-6 HAT3017R 1002ds 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as

    Q13FC1450000614

    Abstract: avr vr3 AVR453 avr vr6 VR3 avr ATMEGA406 CONN2 Sim jumper Q13FC145 0-150VDC
    Text: AVR454 Users Guide - ATAVRSB100 - Smart Battery Development Board Features • • • • • • • • • Evaluation of ATmega406 as a smart battery controller Cell voltage simulator Charge/discharge current simulator 18-bit Coulomb Counter ADC for current measurements


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    PDF AVR454 ATAVRSB100 ATmega406 18-bit 12-bit ATAVRSB100 SB100) SB100 2598C-AVR-06/06 Q13FC1450000614 avr vr3 AVR453 avr vr6 VR3 avr CONN2 Sim jumper Q13FC145 0-150VDC

    HAT1125H

    Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
    Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient


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    PDF uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L

    H7N1009MD

    Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
    Text: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility


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    PDF CR3KM-12 CR6KM-12 CR8KM-12 O-220FN OT-89 CR03AM-16 CR04AM-12 SC-59 CR03AM-12 CR05AM-12 H7N1009MD HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as