HE6009
Abstract: HJ122
Text: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2002.08.13 Page No. : 1/4 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ122 is designed for use in general purposes and low speed switching applications.
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HE6009
HJ122
HJ122
O-252
HE6009
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HE6009
Abstract: HJ122 Y2 MARKING
Text: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications.
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HE6009
HJ122
O-252
HJ122
200oC
183oC
217oC
260oC
245oC
HE6009
Y2 MARKING
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HE6009
Abstract: HJ122 damper diode darlington npn
Text: HI-SINCERITY Spec. No. : HE6009 Issued Date : 1996.02.03 Revised Date : 2003.04.11 Page No. : 1/4 MICROELECTRONICS CORP. HJ122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-252 The HJ122 is designed for use in general purposes and low speed switching applications.
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Original
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PDF
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HE6009
HJ122
O-252
HJ122
HE6009
damper diode darlington npn
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