Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6267 Issued Date : 1992.11.25 Revised Date : 2005.01.14 Page No. : 1/4 MICROELECTRONICS CORP. H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.
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HE6267
H2N3417
H2N3417
183oC
217oC
260oC
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diode marking H2
Abstract: H2N7000
Text: HI-SINCERITY Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2006.08.10 Page No. : 1/5 MICROELECTRONICS CORP. H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching
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HE6267
H2N7000
H2N7000
150oC
200oC
183oC
217oC
260oC
245oC
10sec
diode marking H2
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H2N7000
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 1/4 H2N7000 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers.
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HE6267
H2N7000
H2N7000
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1902 transistor
Abstract: H2N3417
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267-B Issued Date : 1992.11.25 Revised Date : 2000.09.01 Page No. : 1/3 H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.
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HE6267-B
H2N3417
H2N3417
1902 transistor
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