HE641 Search Results

HE641 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor BC 245 Abstract: HBC546 Text: HI-SINCERITY Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page No. : 1/4 MICROELECTRONICS CORP. HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC546 is primarily intended for use in driver stage of audio amplifiers. TO-92	Original	HE6417 HBC546 HBC546 183oC 217oC 260oC transistor BC 245	PDF
IC tl 077 Abstract: HBC547 transistor BC 245 Text: HI-SINCERITY Spec. No. : HE6418 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/5 MICROELECTRONICS CORP. HBC547 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC547 is designed for use in driver stage of audio amplifier. TO-92 Features • High Breakdown Voltage: 45V	Original	HE6418 HBC547 HBC547 183oC 217oC 260oC IC tl 077 transistor BC 245	PDF
HBC327 Abstract: 100MHZ HBC337 pt 100 to92 transistor BC 336 Text: HI-SINCERITY Spec. No. : HE6413 Issued Date : 1993.01.15 Revised Date : 2005.01.25 Page No. : 1/5 MICROELECTRONICS CORP. HBC327 PNP EPITAXIAL PLANAR TRANSISTOR Description This HBC327 is designed for driver and output-stages of audio amplifiers. Features TO-92	Original	HE6413 HBC327 HBC327 100mA HBC337 183oC 217oC 260oC 100MHZ HBC337 pt 100 to92 transistor BC 336	PDF
100MHZ Abstract: HBC327 HBC337 HE641 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6415 Issued Date : 1992.11.25 Revised Date : 2002.02.05 Page No. : 1/4 HBC337 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC337 is designed for driver and output-stage of audio amplifiers. Features TO-92	Original	HE6415 HBC337 HBC337 100mA HBC327 100MHZ HBC327 HE641	PDF
HAD826 Abstract: No abstract text available Text: HI-SINCERITY Spec. No. : HE6411 Issued Date : 199.03.06 Revised Date : 2005.01.25 Page No. : 1/4 MICROELECTRONICS CORP. HAD826 NPN EPITAXIAL PLANAR TRANSISTOR Description The HAD826 is designed for general purpose amplifier and high speed, mediumpower switching applications.	Original	HE6411 HAD826 HAD826	PDF
HBC546 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page No. : 1/3 HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC546 is primarily intended for use in driver stage of audio amplifiers. Features	Original	HE6417 HBC546 HBC546	PDF
HAD826 Abstract: HE641 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6411-B Issued Date : 199.03.06 Revised Date : 2000.09.01 Page No. : 1/3 HAD826 NPN EPITAXIAL PLANAR TRANSISTOR Description The HAD826 is designed for general purpose amplifier and high speed, medium-power switching applications.	Original	HE6411-B HAD826 HAD826 HE641	PDF
100MHZ Abstract: HBC327 HBC337 Text: HI-SINCERITY Spec. No. : HE6415 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/5 MICROELECTRONICS CORP. HBC337 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC337 is designed for driver and output-stage of audio amplifiers. TO-92 Features	Original	HE6415 HBC337 HBC337 100mA HBC327 183oC 217oC 260oC 100MHZ HBC327	PDF
HLB120A Abstract: h2a transistors Text: HI-SINCERITY Spec. No. : HE6412 Issued Date : 1998.12.01 Revised Date : 2005.02.05 Page No. : 1/4 MICROELECTRONICS CORP. HLB120A NPN Triple Diffused Planar Type High Voltage Transistors Description The HLB120A is a medium power transistor designed for use in switching	Original	HE6412 HLB120A HLB120A 183oC 217oC 260oC h2a transistors	PDF
HLB120A Abstract: npn transistors 400V low power to92 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6412 Issued Date : 1998.12.01 Revised Date : 2002.01.31 Page No. : 1/3 HLB120A NPN Triple Diffused Planar Type High Voltage Transistors Description The HLB120A is a medium power transistor designed for use in	Original	HE6412 HLB120A HLB120A npn transistors 400V low power to92	PDF
100MHZ Abstract: HBC327 HBC337 transistor BC 336 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6413 Issued Date : 1993.01.15 Revised Date : 2002.02.05 Page No. : 1/4 HBC327 PNP EPITAXIAL PLANAR TRANSISTOR Description This HBC327 is designed for driver and output-stages of audio amplifiers. Features TO-92	Original	HE6413 HBC327 HBC327 100mA HBC337 100MHZ HBC337 transistor BC 336	PDF
HBC547 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6418-C Issued Date : 1992.11.25 Revised Date : 2000.09.20 Page No. : 1/4 HBC547 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC547 is designed for use in driver stage of audio amplifier. Features • High Breakdown Voltage: 45V	Original	HE6418-C HBC547 HBC547	PDF
T8E6 Abstract: HE721 3400 sg03 dox5 he721 803 FP08E 388D he043 HE312 he391a Text: 1 - 射频/微波集成放大器系列 1-1.单片集成放大器型号 HE578A HE578A 频率范围功率增益噪声系数输出功率驻波比 f MHz Gp(dB)Typ Fn(dB)Typ P-1(dBm)Typ VSWR Typ V/mA 1.0 18.0 1.5:1 3-5/60 ST32 500MHz 20.0 100－3000 1000MHz	Original		PDF
QF004A Abstract: he315 HE160B dox5 SMO 365 R he721 sg03 smd diode F6 2D stripline directional couplers LBM700A-85 Text: A bow ei BOWEI is one o fth e leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and m anufacturing RF/microwavea components for the world's marketplace.BOWEI serves the communication	OCR Scan	12000-square-meter IS09000-2000, HD-28A HD-28C HD-32A HE883 HE761) QF004A he315 HE160B dox5 SMO 365 R he721 sg03 smd diode F6 2D stripline directional couplers LBM700A-85	PDF