transistor BC 245
Abstract: HBC546
Text: HI-SINCERITY Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page No. : 1/4 MICROELECTRONICS CORP. HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC546 is primarily intended for use in driver stage of audio amplifiers. TO-92
|
Original
|
PDF
|
HE6417
HBC546
HBC546
183oC
217oC
260oC
transistor BC 245
|
IC tl 077
Abstract: HBC547 transistor BC 245
Text: HI-SINCERITY Spec. No. : HE6418 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/5 MICROELECTRONICS CORP. HBC547 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC547 is designed for use in driver stage of audio amplifier. TO-92 Features • High Breakdown Voltage: 45V
|
Original
|
PDF
|
HE6418
HBC547
HBC547
183oC
217oC
260oC
IC tl 077
transistor BC 245
|
HBC327
Abstract: 100MHZ HBC337 pt 100 to92 transistor BC 336
Text: HI-SINCERITY Spec. No. : HE6413 Issued Date : 1993.01.15 Revised Date : 2005.01.25 Page No. : 1/5 MICROELECTRONICS CORP. HBC327 PNP EPITAXIAL PLANAR TRANSISTOR Description This HBC327 is designed for driver and output-stages of audio amplifiers. Features TO-92
|
Original
|
PDF
|
HE6413
HBC327
HBC327
100mA
HBC337
183oC
217oC
260oC
100MHZ
HBC337
pt 100 to92
transistor BC 336
|
100MHZ
Abstract: HBC327 HBC337 HE641
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6415 Issued Date : 1992.11.25 Revised Date : 2002.02.05 Page No. : 1/4 HBC337 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC337 is designed for driver and output-stage of audio amplifiers. Features TO-92
|
Original
|
PDF
|
HE6415
HBC337
HBC337
100mA
HBC327
100MHZ
HBC327
HE641
|
HAD826
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6411 Issued Date : 199.03.06 Revised Date : 2005.01.25 Page No. : 1/4 MICROELECTRONICS CORP. HAD826 NPN EPITAXIAL PLANAR TRANSISTOR Description The HAD826 is designed for general purpose amplifier and high speed, mediumpower switching applications.
|
Original
|
PDF
|
HE6411
HAD826
HAD826
|
HBC546
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page No. : 1/3 HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC546 is primarily intended for use in driver stage of audio amplifiers. Features
|
Original
|
PDF
|
HE6417
HBC546
HBC546
|
HAD826
Abstract: HE641
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6411-B Issued Date : 199.03.06 Revised Date : 2000.09.01 Page No. : 1/3 HAD826 NPN EPITAXIAL PLANAR TRANSISTOR Description The HAD826 is designed for general purpose amplifier and high speed, medium-power switching applications.
|
Original
|
PDF
|
HE6411-B
HAD826
HAD826
HE641
|
100MHZ
Abstract: HBC327 HBC337
Text: HI-SINCERITY Spec. No. : HE6415 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/5 MICROELECTRONICS CORP. HBC337 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC337 is designed for driver and output-stage of audio amplifiers. TO-92 Features
|
Original
|
PDF
|
HE6415
HBC337
HBC337
100mA
HBC327
183oC
217oC
260oC
100MHZ
HBC327
|
HLB120A
Abstract: h2a transistors
Text: HI-SINCERITY Spec. No. : HE6412 Issued Date : 1998.12.01 Revised Date : 2005.02.05 Page No. : 1/4 MICROELECTRONICS CORP. HLB120A NPN Triple Diffused Planar Type High Voltage Transistors Description The HLB120A is a medium power transistor designed for use in switching
|
Original
|
PDF
|
HE6412
HLB120A
HLB120A
183oC
217oC
260oC
h2a transistors
|
HLB120A
Abstract: npn transistors 400V low power to92
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6412 Issued Date : 1998.12.01 Revised Date : 2002.01.31 Page No. : 1/3 HLB120A NPN Triple Diffused Planar Type High Voltage Transistors Description The HLB120A is a medium power transistor designed for use in
|
Original
|
PDF
|
HE6412
HLB120A
HLB120A
npn transistors 400V low power to92
|
100MHZ
Abstract: HBC327 HBC337 transistor BC 336
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6413 Issued Date : 1993.01.15 Revised Date : 2002.02.05 Page No. : 1/4 HBC327 PNP EPITAXIAL PLANAR TRANSISTOR Description This HBC327 is designed for driver and output-stages of audio amplifiers. Features TO-92
|
Original
|
PDF
|
HE6413
HBC327
HBC327
100mA
HBC337
100MHZ
HBC337
transistor BC 336
|
HBC547
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6418-C Issued Date : 1992.11.25 Revised Date : 2000.09.20 Page No. : 1/4 HBC547 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC547 is designed for use in driver stage of audio amplifier. Features • High Breakdown Voltage: 45V
|
Original
|
PDF
|
HE6418-C
HBC547
HBC547
|
T8E6
Abstract: HE721 3400 sg03 dox5 he721 803 FP08E 388D he043 HE312 he391a
Text: 1 - 射频/微波集成放大器系列 1-1.单片集成放大器 型号 HE578A HE578A 频率范围 功率增益 噪声系数 输出功率 驻波比 f MHz Gp(dB)Typ Fn(dB)Typ P-1(dBm)Typ VSWR Typ V/mA 1.0 18.0 1.5:1 3-5/60 ST32 500MHz 20.0 100－3000 1000MHz
|
Original
|
PDF
|
|
QF004A
Abstract: he315 HE160B dox5 SMO 365 R he721 sg03 smd diode F6 2D stripline directional couplers LBM700A-85
Text: A bow ei BOWEI is one o fth e leading RF/microwave solution providers in China. With more than twenty years extensive experience, BOWEI has been engineering and m anufacturing RF/microwavea components for the world's marketplace.BOWEI serves the communication
|
OCR Scan
|
PDF
|
12000-square-meter
IS09000-2000,
HD-28A
HD-28C
HD-32A
HE883
HE761)
QF004A
he315
HE160B
dox5
SMO 365 R
he721
sg03
smd diode F6 2D
stripline directional couplers
LBM700A-85
|