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    HEMT-3301

    Abstract: HEMT HEMT-1001
    Text: HEMT-3301/HEMT-1001 940 nm High Radiant Emitters Data Sheet Description Features The HEMT-3301 and HEMT-1001are infrared emitters, using amesa structure GaAs on GaAs infrared diode, IRED, optimized for maximum quantum efficiency at a peak wavelength of 940 nm. The HEMT-3301 and HEMT1001emitters are untinted, undiffused plastic packages


    Original     		HEMT-3301/HEMT-1001 HEMT-3301 HEMT-1001are HEMT1001emitters HEMT-3301. HEMT-1001. AV02-0912EN HEMT HEMT-1001 PDF

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    Abstract: No abstract text available
    Text: HEMT-3301/HEMT-1001 940 nm High Radiant Emitters Datasheet Description Features The HEMT-3301 and HEMT-1001are infrared emitters, using amesa structure GaAs on GaAsinfrared diode, IRED, optimizedfor maximum quantum efficiencyat a peak wavelength of 940 nm.The HEMT-3301 and HEMT-1001emitters


    Original     		HEMT-3301/HEMT-1001 HEMT-3301 HEMT-1001are HEMT-1001emitters HEMT-3301. HEMT-1001. AV02-0912EN PDF