HEWLETT-PACKARD TRANSISTOR MICROWAVE Search Results

HEWLETT-PACKARD TRANSISTOR MICROWAVE Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

HEWLETT-PACKARD TRANSISTOR MICROWAVE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HMXR-5001 Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001 Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog	Original		PDF
RF transistors with s-parameters Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave	PDF
AT-42035 Abstract: micro-x 420 Text: What mLliM HEWLETT* PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features different functions. The 20 emitter finger interdigitated geometry • High Output Power: yields a medium sized transistor 21.0 dBm Typical PldB at 2.0 GHz	OCR Scan	AT-42035 easy23 AT-42035 Rn/50 micro-x 420	PDF
transistor s11 s12 s21 s22 Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21	PDF
Untitled Abstract: No abstract text available Text: What HEWLETTÍ mLfíM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features functions. The 20 emitter finger interdigitated geometry yields a • High Output Power: 12.0 dBm Typical PxdB at 2.0 GHz medium sized transistor with	OCR Scan	AT-42010 AT-42010 Rj/50 DD17bSfl M4475fl4	PDF
5965-5365E Abstract: marking CJP TT 2490 marking aat sot363 6252 IC circuit diagram Text: Whit HEWLETT* wSKM PACKARD 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit • Single Positive Supply Voltage 1.5 - 5V Surface Mount Package SOT-363 (SC -70) • Current Adjustable, 1 to	OCR Scan	INA-12063 OT-363 INA-12063 OT-363 OT-143 2J001005 5965-5365E 5965-5365E marking CJP TT 2490 marking aat sot363 6252 IC circuit diagram	PDF
Untitled Abstract: No abstract text available Text: HEWLETT-PACKARD/ CHPNTS m blE ]> • ll4475fl4 DDDTfib1! 3b5 M H P A HEW LETT A T-6°585 PACKARD U P to 6 G H z L ow N olse Silicon Bipolar Transistor 85 Plastic Package Features • • • • • Low Bias Current Operation Low Noise Figure:1.4 dB typical at 1.0 GHz	OCR Scan	l4475fl4 AT-60585	PDF
Untitled Abstract: No abstract text available Text: HEWLETT-PACKARD/ CHPNTS m blE D HEW LETT PACKARD • M44 7 5Ô M DDGT7fiS 10T « H P A AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35 micro-X Package Features 22.0 dBm typical Pi dB at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz EMITTER High Gain-Bandwidth Product: 7.0 GHz typical fr	OCR Scan	AT-01635 AT-01635	PDF
Untitled Abstract: No abstract text available Text: HEWLETT-PACKARD/ CMPNTS blE D • 4 M 4 7 SA 4 0 0 0 ti77b 1Tb ■ H P A AT-00570 Up to 4 GHz General Purpose Silicon Bipolar Transistor W kim H E W LE T T PACKARD 70 mil Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • 11.5 dB typical Gi dB at 2.0 GHz	OCR Scan	AT-00570 AT-00570	PDF
Untitled Abstract: No abstract text available Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical PldB at 2.0 GHz 20.5dBmTypicalP1 fflat4.0 GHz • High Gain at 1 dB Compression: 14.0dBTypicaIGldBat2.0 GHz	OCR Scan	AT-42010 AT-42010 Rn/50	PDF
INA-03170 Abstract: INA-01170 INA-02170 INA-03 6679 az ina series AN-S003 INA-10386 mmic ina INA-01 Text: INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process. These devices are 50 ohm	Original	INA-02170. INA-01170, INA-03170, INA-10386. AN-S011: INA-03170 INA-01170 INA-02170 INA-03 6679 az ina series AN-S003 INA-10386 mmic ina INA-01	PDF
Untitled Abstract: No abstract text available Text: HEWLETT-PACKARD/ m CUPNTS blE ]> • 4447564 D0ÜT7Ö3 HEW LETT A T -0 1 610 PACKARD UP to 4 Hz General Purpose Silicon Bipolar Transistor 33b 100 mil Package Features • 22.0 dBm typical Pi dB at 2.0 GHz • 9.5 dB typical Gi dB at 2.0 GHz • • High Gain-Bandwidth Product: 7.0 GHz typical fr	OCR Scan	AT-01610	PDF
Untitled Abstract: No abstract text available Text: HEWLETT-PACKARD/ CMPNTS blE 1 H EW LETT PACKARD • 4 4 4 7 S 6 4 0 0 0 1 7 7 4 323 « H P A AT-00535 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35mfcro-X Package Features • 16.0 dBm typical Pi dBat 2.0 GHz • 10.5 dB typical G i dB at 2.0 GHz	OCR Scan	AT-00535 35mfcro-X AT-00535	PDF
ina series Abstract: Signal Path Designer AN-S003 Text: INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process. These devices are 50 ohm	Original	INA-02: INA-03: INA-10: AN-S011: 5965-8670E ina series Signal Path Designer AN-S003	PDF

TRANSISTOR 0835 Abstract: No abstract text available Text: What mLliM HEWLETT* PACKARD Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0835,-0836 Features 0.5 GHz and can be used as a high gain transistor below this fre quency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial	OCR Scan	MSA-0835 TRANSISTOR 0835	PDF
AT-42000 Abstract: 42000 Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Chip Technical Data AT-42000 This device is designed for use in low noise, wideband amplifier, • High Output Power: 21.0 dBm Typical PldB at 2.0 GHz mixer and oscillator applications	OCR Scan	AT-42000 AT-42000 nitride44 Rn/50 42000	PDF
B52 transistor Abstract: No abstract text available Text: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz	OCR Scan	AT-42000 AT-42000 44475AM 0017b54 B52 transistor	PDF
hl 4929 Abstract: 34T sot-363 ATIC 164 D2 48 pin Text: That HEWLETT WL'kM PACKARD 1.5 GHz Low N oise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, A ctive Bias Circuit Surface Mount Package SOT-363 SC -70 D escription Pin C onnections and Package Marking The INA-12063 is a unique RFIC	OCR Scan	INA-12063 OT-363 INA-12063 OT-363 OT-143 5965-5365E 4447S GD1S32Û hl 4929 34T sot-363 ATIC 164 D2 48 pin	PDF
T3D 62 Abstract: t3d 98 AT-41400 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66 Text: K m HEWLETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features that are easy to match for low noise and moderate power appli cations. This device is designed for use in low noise, wideband amplifier, mixer and oscillator	OCR Scan	AT-41400 AT-41400 Rn/50 MM475flM 0017bE3 17L24 T3D 62 t3d 98 T3D 87 AT-41400-GP4 t3d 54 chip die npn transistor t3d 69 T3D 83 t3d 66	PDF
AT-41410 Abstract: AT41410 Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz	OCR Scan	AT-41410 AT-41410 Rn/50 AT41410	PDF
Untitled Abstract: No abstract text available Text: What HEWLETT* miltm PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz	OCR Scan	AT-41410 AT-41410 Rn/50	PDF
transistor rf type M 2530 Abstract: signal path designer INA02170 Text: f T J I H EW LETT 1WM P A C K A R D INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process.	OCR Scan	INA-02: INA-03: AN-S011: transistor rf type M 2530 signal path designer INA02170	PDF
Untitled Abstract: No abstract text available Text: HEWLETT-PACKARD/ CHPNTS t.lE D WM 4447534 1 44 577 □DD‘Ö Surface Mount, Low Current Silicon Bipolar Transistor Technical Data AT-60111 AT-60211 Features • Low C u rrent O peration AT-60111: 0.4 mA at 3 V AT-60211: 0.8 mA at 3 V • Low Noise Figure	OCR Scan	AT-60111 AT-60211 AT-60111: AT-60211: OT-143	PDF
chip die npn transistor Abstract: No abstract text available Text: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz	OCR Scan	AT-41400 AT-41400 Rn/50 chip die npn transistor	PDF

HEWLETT-PACKARD TRANSISTOR MICROWAVE Search Results

HEWLETT-PACKARD TRANSISTOR MICROWAVE Result Highlights (5)

HEWLETT-PACKARD TRANSISTOR MICROWAVE Datasheets Context Search

HMXR-5001

RF transistors with s-parameters

AT-42035

transistor s11 s12 s21 s22

Untitled

5965-5365E

Untitled

Untitled

Untitled

Untitled

INA-03170

Untitled

Untitled

ina series

TRANSISTOR 0835

AT-42000

B52 transistor

hl 4929

T3D 62

AT-41410

Untitled

transistor rf type M 2530

Untitled

chip die npn transistor