Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS blE D • 4 M 4 7 SA 4 0 0 0 ti77b 1Tb ■ H P A AT-00570 Up to 4 GHz General Purpose Silicon Bipolar Transistor W kim H E W LE T T PACKARD 70 mil Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • 11.5 dB typical Gi dB at 2.0 GHz
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AT-00570
AT-00570
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Untitled
Abstract: No abstract text available
Text: Philips Semi c on du ct or s Pr od uc t specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N-channel enhancement mode field-effed power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK436W-1000B
OT429
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BU2508D
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508D GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
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BU2508D
7110flEb
711002b
BU2508D
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A7N transistor
Abstract: transistor a7n ti77 ec ubt
Text: Philips S em ic ondu c tors P ro d u ct specification T r e n c h M O S transistor Logic level FET PHT11N06LT G E N E R A L DESCRI PTIO N N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting.
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PHT11N06LT
A7N transistor
transistor a7n
ti77
ec ubt
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