HF POWER AMPLIFIER D1001UK Search Results

HF POWER AMPLIFIER D1001UK Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MGN1S1208MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

HF POWER AMPLIFIER D1001UK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: m 0133107 DOOO'IIG 327 • SHLB bOE D SEHELAB PLC 'T''3l-'Z-^ SEMELAB D1001UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 2 0W -28V -175M H z SINGLE ENDED MECHANICAL DATA Dimensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS	OCR Scan	D1001UK -175M 300/xs,	PDF
D1001UK Abstract: No abstract text available Text: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1001UK 175MHz D1001UK	PDF
Untitled Abstract: No abstract text available Text: INI TetraFET itti mi SEME D1001UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20 W -2 8 V -1 7 5 M H z SINGLE ENDED ,c k. 2 . * * F FEATURES T _ ▼ Í I ¡: H i K • SIMPLIFIED AMPLIFIER DESIGN j • SUITABLE FOR BROAD BAND APPLICATIONS	OCR Scan	D1001UK	PDF
Untitled Abstract: No abstract text available Text: nil Vrr r = mi TetraFET SEM E D1001UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2 0 W -2 8 V -1 7 5 M H z SINGLE ENDED FEATURES 4 _U fT • SIMPLIFIED AMPLIFIER DESIGN I J • SUITABLE FOR BROAD BAND APPLICATIONS	OCR Scan	D1001UK	PDF
b649 Abstract: D1001UK Text: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1001UK 175MHz 100nF 10-30pF 16-100pF D1001UK 175MHz b649	PDF
Untitled Abstract: No abstract text available Text: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1001UK 175MHz 19swg 22swg B64920A618X830	PDF
b649 Abstract: D1001UK Text: TetraFET D1001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1001UK 175MHz 19swg 22swg B64920A618X830 b649 D1001UK	PDF
b649 Abstract: D1001UK 20V5A Text: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1001UK 175MHz 19swg 22swg B64920A618X830 b649 D1001UK 20V5A	PDF
Untitled Abstract: No abstract text available Text: TetraFET D1001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1001UK 175MHz 19swg 22swg B64920A618X830	PDF
Untitled Abstract: No abstract text available Text: TetraFET D1001UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1001UK 175MHz 19swg 22swg B64920A618X830	PDF
b649 Abstract: HF power amplifier D1001UK D1002UK D1001UK Text: TetraFET D1002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1002UK 175MHz 100nF D1001UK 10-30pF 16-100pF D1002UK 175MHz b649 HF power amplifier D1001UK D1001UK	PDF
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10	PDF
Untitled Abstract: No abstract text available Text: TetraFET D1002UK.03 METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1002UK 175MHz 19swg 22swg B64920A618X830	PDF
b649 Abstract: D1001UK D1019UK enamelled copper wire Text: TetraFET D1019UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1019UK 175MHz 19swg 22swg B64920A618X830 b649 D1001UK D1019UK enamelled copper wire	PDF

b649 Abstract: D1001UK D1019UK Text: TetraFET D1019UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED C 1 2 4 3 A B FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS H • LOW Crss	Original	D1019UK 175MHz 19swg 22swg B64920A618X830 b649 D1001UK D1019UK	PDF