2N5455
Abstract: 40636 2SK960 2Sk955 hfe max 200 2SK989 A5T2907 40361 40538 A8T4061
Text: STI Type: 2N3389 Notes: Polarity: NPN Power Dissipation: .80 VCBO: 195 VCER: 160 ICBO: 140 ICBO A: 2.0 hFE: 60 hFE A: 7.0 VCE: .80 VBE: .90 IC: 10 COB: 10 fT: 30 Case Style: TO-205AD/TO-39 Industry Type: 2N3389 STI Type: 2N3410 Notes: Polarity: NPN Power Dissipation: .50
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2N3389
O-205AD/TO-39
2N3410
2N3413
O-205AD/TO-39:
2N3411
AD815
2N5455
40636
2SK960
2Sk955
hfe max 200
2SK989
A5T2907
40361
40538
A8T4061
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motorola to-202
Abstract: 2SC685 2SC2241
Text: POWER SILICON NPN Item Number Part Number 10 15 20 25 30 fT hFE Min I C 5 V(BR)CEO Manufacturer Max (Hz) t, ICBO Max (A) Max 8) tf Max (8) PD Max (W) Toper Max °C) Package Style < 1 A, (Co nt' d) 100m 100m 100m 100m .10 100m 100m 100m 100m 100m 300 300 300
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O-202
T0-226
T0-66
O-226
O-202var
motorola to-202
2SC685
2SC2241
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J1 3007-1
Abstract: IC 4049 F J1 3007-2 J1 3007-2 hfe 4049 ic c 1891 ITR06659 IC 2822 ITR06656 ITR06658
Text: 注文コード No. N 3 0 0 7 2SC4365 No. N 3 0 0 7 30300 NPN エピタキシァルプレーナ形シリコントランジスタ 2SC4365 特長 VHF. UHF / MIX. OSC. 低電圧高周波増幅用 ・低電圧動作：fT=3.0GHz typ（VCE=3V） 。 ：MAG=12dB typ（VCE=3V, IC=10mA）。
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2SC4365
S21e2
2018B
J1 3007-1
IC 4049
F J1 3007-2
J1 3007-2
hfe 4049
ic c 1891
ITR06659
IC 2822
ITR06656
ITR06658
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2044B
Abstract: 2SC4306 ITR06635 ITR06636
Text: Ordering number:ENN2930A NPN Epitaxial Planar Silicon Transistor 2SC4306 High-Current Switching Applications Package Dimensions unit:mm 2045B [2SC4306] 2.3 1.5 6.5 5.0 4 5.5 • Adoption of FBET, MBIT processes. · Low saturation voltage. · High-speed switching.
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ENN2930A
2SC4306
2045B
2SC4306]
2SC4306-used
2044B
2044B
2SC4306
ITR06635
ITR06636
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2044B
Abstract: 2SA1641 ITR04055 ITR04056
Text: Ordering number:ENN2926A PNP Epitaxial Planar Silicon Transistors 2SA1641 High-Current Switching Applications Package Dimensions unit:mm 2045B [2SA1641] 2.3 1.5 6.5 5.0 4 5.5 • Adoption of FBET, MBIT processes. · Low saturation voltage. · Fast switching speed.
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ENN2926A
2SA1641
2045B
2SA1641]
2SA1641-used
2044B
2044B
2SA1641
ITR04055
ITR04056
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2N1100
Abstract: 2N2082 2n441 2N1523 2N443 2N4048 2N174 2N442 2N2076 2N277
Text: germanium power transistors 153 PNP ALLOY TRANSISTORS Up to 65 Amp RATED BREAKDOWN VOLTAGES TfPE NU~'BERS 2N 173 2N 174 2N 277 2N 278 2N441 2N442 2N443 2N 1099 2N 1100 2N 1358 2N 1412 2N 1970 2N 1980 2N 1981 2N 1982 2N 2075 2N 2076 2N 2077 2N 2078 2N 2079
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tb31224cf
Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future
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SCE0007A
tb31224cf
transistor 2sk1603
TA8264AHQ
TC94A58FAG
TA7769P
TA8275HQ
2SK1603
ta8266hq
2SK2056
S2Y52
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2044B
Abstract: 2SA1641
Text: Ordering number:EN2926A PNP Epitaxial Planar Silicon Transistor 2SA1641 High-Current Switching Applications Features • Adoption of FBET, MBIT processes. · Low saturation voltage. · Fast switching speed. · Large current capacity. · Small and slim package making it easy to make
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EN2926A
2SA1641
2SA1641-used
2045B
2SA1641]
2044B
2044B
2SA1641
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2044B
Abstract: 2SC4306
Text: Ordering number:EN2930A NPN Epitaxial Planar Silicon Transistor 2SC4306 High-Current Switching Applications unit:mm 2045B [2SC4306] 6.5 5.0 2.3 0.5 7.0 4 5.5 • Adoption of FBET, MBIT processes. · Low saturation voltage. · Fast switching speed. · Large current capacity.
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EN2930A
2SC4306
2045B
2SC4306]
2SC4306-used
2044B
2044B
2SC4306
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2N3904 TRANSISTOR using darlington amplifier
Abstract: crystal 20Mhz of 2n3904 10mhz crystal oscillator 74LS04 as colpitts oscillator 74LS04 LT1034 20MHz quartz crystal crystal oscillator 4049 LT1011
Text: Application Note 12 October 1985 Circuit Techniques for Clock Sources Jim Williams Almost all digital or communication systems require some form of clock source. Generating accurate and stable clock signals is often a difficult design problem. Quartz crystals are the basis for most clock sources. The
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50ppm
an25fa
AN12-8
2N3904 TRANSISTOR using darlington amplifier
crystal 20Mhz
of 2n3904
10mhz crystal oscillator
74LS04 as colpitts oscillator
74LS04
LT1034
20MHz quartz crystal
crystal oscillator 4049
LT1011
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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Comp27-1296
triacs bt 804 600v
UR720
1N4465
AO110
diode 1N539
2N3750
Unitrode discrete databook
2N6138
CM104
unitrode 679 BRIDGE rectifier
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111ii
MZ5558
Z5555,
Z5556,
MZ5557
powec rm 1110
rm 1100 powec
MPC1000
transistors JX 6822 A
inverter welder 4 schematic
SAA 14Z
transistor SI 6822
stg 8810
PL 15Z DIODE
germanium transistor
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20u5
Abstract: 2044B 2SC43 2SC4306
Text: Ordering number: EN 2930A 2 S C 4 3 06 No. 2930A SMIYO NPN Epitaxial P lanar Silicon Transistor i High-Current Switching Applications Features . Adoption of FBET.MBIT processes. • Low saturation voltage. • Fast switching speed. •Large current capacity.
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293OA
2SC43
2SC4306-used
20u5
2044B
2SC4306
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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1N5438
Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi
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27TfC
1N5438
tfc 5630
2N5161
germanium
2N4193
1N1319
A2023 transistor
2N217
1N5159
transistor bf 175
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germanium transistor
Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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varactor 36z
Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r
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Z1000
MZ4614
MZ4627
1N4099
M4L3052
M4L3056
1N5158
varactor 36z
germanium
halbleiter index transistor
Halbleiter Buch
2n5347
2n3054
working of reactance modulator
JE2955
germanium transistor
2N3902
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PDF
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MC4049
Abstract: mrf536 MRF534 MM4049 hfe 4049 MMC4049 case 317-01
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MM4049 MMC4049 MRF534 MRF536 The RF Line PNP SILICON HIGH-FREQUENCY TRANSISTORS . . . d e s ig n e d f o r u s e a s a h ig h - f r e q u e n c y c u r r e n t m o d e s w itc h . B e c a u s e o f th e e x tr e m e ly
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MM4049
MMC4049
MRF534
MRF536
RF534
RF536
MC4049
mrf536
hfe 4049
case 317-01
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PDF
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2N1103
Abstract: CK26A 2SA474 2SA475 2N1524 OC303 OC309-1 OC309-2 OC304 A1383 transistor
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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buy56-4
BUY56-6
buy56-10
BUY72-4
BUY72-6
BUY72-10
2N1103
CK26A
2SA474
2SA475
2N1524
OC303
OC309-1
OC309-2
OC304
A1383 transistor
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PDF
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A1383 transistor
Abstract: 2N907 transistor t09 2N907 PNP 2SA475 A1383 2SA474 2N1508 OC303 OC309-1
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
A1383 transistor
2N907
transistor t09
2N907 PNP
2SA475
A1383
2SA474
OC303
OC309-1
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transistor t09
Abstract: A1383 transistor 2sc114 usaf516es047m usaf516es048m 2SA474 2SA27 usaf517es060m 2sc107 transistor 2SC114 replacement
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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PT6905A
PT6905B
PT6905C
100msa
100m5a
MM2261
MM2262
MM2263
transistor t09
A1383 transistor
2sc114
usaf516es047m
usaf516es048m
2SA474
2SA27
usaf517es060m
2sc107
transistor 2SC114 replacement
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