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    HFE 8050 Search Results

    HFE 8050 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SER8050-201MEB Coilcraft Inc General Purpose Inductor, 0.2uH, 20%, Ferrite-Core, 3335 Visit Coilcraft Inc
    SER8050-501MEB Coilcraft Inc General Purpose Inductor, 0.5uH, 20%, Ferrite-Core, 3335, Visit Coilcraft Inc
    SER8050-112MEC Coilcraft Inc General Purpose Inductor, 1.1uH, 20%, Ferrite-Core, 3335, Visit Coilcraft Inc
    SER8050-451MEC Coilcraft Inc General Purpose Inductor, 0.45uH, 20%, Ferrite-Core, 3335 Visit Coilcraft Inc
    SER8050-201 Coilcraft Inc Power inductor, 20% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc

    HFE 8050 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMS8050-L

    Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
    Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.


    Original     		PDF MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664

    8050B

    Abstract: 8550B
    Text: 8050B 8050B Silicon NPN Epitaxial Transistor Description :The 8050B is designed for use in 2W output amplifier of portable radios in class B push-pull operation Features: ●Excellent hFE Linearity ●Complementary to 8550B Chip Appearance Chip Size 580umx580um


    Original     		PDF 8050B 8050B 8550B 580um 580um 115um 115um 120um 120um 8550B

    8550b

    Abstract: 8050B 45594 Shanghai SIM-BCD Semiconductor PNP transistor 8550B
    Text: 8550B 8550B Silicon PNP Epitaxial Transistor Description :The 8550B is designed for use in 2W output amplifier of portable radios in class B push-pull operation Features: ●Excellent hFE Linearity ●Complementary to 8050B Chip Appearance Chip Size 580umx580um


    Original     		PDF 8550B 8550B 8050B 580um 580um 115um 115um 120um 120um 8050B 45594 Shanghai SIM-BCD Semiconductor PNP transistor 8550B

    semiconductor mps 8050 d

    Abstract: MPS 8050 D MPS 8050 B K MPS 8050 hFE 8050 K MPS 8050 c C 8050 d kmps8050 K MPS 8050 d Korea Electronics
    Text: SEMICONDUCTOR MPS8050 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K MPS 8050 B 801 No. 1 Description K KEC 2 KOREA ELECTRONICS CO.,LTD. MPS Series Name 8050 Device Name B,C,D Device Name 3 99.05.20 4 hFE Grade B 5 Lot No.


    Original     		PDF MPS8050 semiconductor mps 8050 d MPS 8050 D MPS 8050 B K MPS 8050 hFE 8050 K MPS 8050 c C 8050 d kmps8050 K MPS 8050 d Korea Electronics

    npn 8050 ecb

    Abstract: 2n5401 2n3904 S8050 equivalent LB120 NPN S8550 S9011 npn M28S bc547 pnp Transistor S9013 BC558 ebc
    Text: TO-92 PACKAGE MX MICROELECTRONICS ● Applied widely for AV,Fm,phones ,toys ,high&low frequency analogy amplifiers and controlers. ICBO TYPE NPN Ptot Ic VCBO VCEO ※ ICEO OR PNP ▲ mW (mA) VCES ICES VCB hFE fT PIN IC IB VCE IC *TPY (V) (mA) (MHZ) 123 100


    Original     		PDF S9011 S9012 S9013 S9014 BC636 BC638 BC640 BF420 BF422 npn 8050 ecb 2n5401 2n3904 S8050 equivalent LB120 NPN S8550 S9011 npn M28S bc547 pnp Transistor S9013 BC558 ebc

    c2328a

    Abstract: B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors
    Text: NPN Medium Power Transistors NPN Medium Power Transistors Device No. [Mark] Case Style VCES* V V CBO EBO V (V) Min (V) Min Min VCEO I CBO VCB I V hFE @ C & CE Min Max (mA) (V) (nA) @ (V) Max IC C ob (mA) @ (V) & (pF) I (V) Max (I = C ) Max Min Max B 10 V CE(SAT)


    Original     		PDF O-92L OT-89 KSB1121 MPS8550 MPS6562 c2328a B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors

    NPN transistor 8050d

    Abstract: 8050c transistor BR 8050 D 8050 pnp transistor st 8050d transistor 8050d BR 8550 BR 8050 8050C 8050D
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA 800mA 800mA, NPN transistor 8050d 8050c transistor BR 8050 D 8050 pnp transistor st 8050d transistor 8050d BR 8550 BR 8050 8050C 8050D

    Untitled

    Abstract: No abstract text available
    Text: ST 8050U NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40


    Original     		PDF 8050U

    NPN transistor 8050d

    Abstract: transistor br 8050d 8050c transistor transistor br 8050 NPN transistor 8050C BR 8050 BR 8050 D
    Text: 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA 800mA 800mA, NPN transistor 8050d transistor br 8050d 8050c transistor transistor br 8050 NPN transistor 8050C BR 8050 BR 8050 D

    NPN transistor 8050d

    Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
    Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA NPN transistor 8050d BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor

    NPN transistor 8050d

    Abstract: BR 8050 D 8050c transistor transistor br 8050 8050 TRANSISTOR PNP 8050c BR 8050 transistor 8050d st 8050d BR 8050D
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D 8050c transistor transistor br 8050 8050 TRANSISTOR PNP 8050c BR 8050 transistor 8050d st 8050d BR 8050D

    BR 8050 D

    Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
    Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA BR 8050 D NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d

    NPN transistor 8050d

    Abstract: BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d

    NPN transistor 8050d

    Abstract: BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor
    Text: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA 800mA 800mA, NPN transistor 8050d BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor

    transistor br 8050

    Abstract: BR 8050 D BR 8050 NPN transistor 8050 PNP 8550 BR 8050 c hFE 8050 transistor b 8050 1/STK 8050 ic
    Text: 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 8050S NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 3.5 ±0.2 4.55±0.2 4.5±0.2 FEATURES Power dissipation 0.625 W Tamb=25 C 14.3 ±0.2 PCM: Collector current


    Original     		PDF 8050S 01-Jun-2002

    st 8050d

    Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: st8050c st 8050C ST8050D transistor b 8050 st 8050 8050B transistor br 8050 transistor 8050d 8050c transistor
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF 8050SS-C 8050SS-D -55OC 8050SS

    st 8050d

    Abstract: 8050 TRANSISTOR PNP BR 8050 BR 8050 D transistor br 8050 st8050c st 8050C 8050 pnp transistor NPN transistor 8050d 8050D
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    TRANSISTOR MARKING YB 1L

    Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
    Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738


    OCR Scan     		PDF 2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846

    Untitled

    Abstract: No abstract text available
    Text: 8550S SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: SOT-23 * Complement to 8050S * Collector Current: Ic=-500mA * Collector D issipation: Pc=225mW Ta=25°C ABSOLUTE M AXIMUM R ATINGS a t Tan*-2$ C


    OCR Scan     		PDF 8550S OT-23 8050S -500mA 225mW 300uS, -100uA -50mA

    Untitled

    Abstract: No abstract text available
    Text: 8050S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 8550S * Collector C urrent: Ic=500mA * Collector D issipation: Pc=225mW Tc=25°C ABSOLUTE MAXIMUM RATINGS a t Tan*-25°C


    OCR Scan     		PDF 8050S 8550S 500mA 225mW 062in 300uS, 100uA 500mA