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    HFE-100 LOW POWER Search Results

    HFE-100 LOW POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    HFE-100 LOW POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C Excellent hFE Linearity A : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise : NF=0.2dB(Typ.). f=(1kHz).


    Original     		PDF KTA1266L. KTC3198L 150mA 150mA 100mA, 30MHz 100Hz,

    KTA1266L

    Abstract: KTC3198L
    Text: SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C ᴌExcellent hFE Linearity A : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ᴌLow Noise : NF=0.2dB(Typ.). f=(1kHz).


    Original     		PDF KTC3198L 150mA KTA1266L. 100mA, 30MHz 100Hz, KTA1266L KTC3198L

    KTC3198L

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES B C ・Excellent hFE Linearity A : hFE 2 =100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=0.2dB(Typ.). f=(1kHz).


    Original     		PDF KTC3198L 150mA KTA1266L. 100mA, 30MHz 100Hz, KTC3198L

    2SC5343

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC5343 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). z Low Noise: NF=10dB(Typ). At f=1KHZ.


    Original     		PDF 2SC5343 150mA 100mA 2SC5343

    Untitled

    Abstract: No abstract text available
    Text: 2SC5343 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=10dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SC5343 150mA 100mA

    2sc5343

    Abstract: Transistor 10A 60v
    Text: 2SC5343 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=1dB(Typ). At f=1KHZ. — MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SC5343 OT-23 150mA 100mA 2sc5343 Transistor 10A 60v

    16w SOT23

    Abstract: sc-59 SOT23 NPN SOT323 2PD601A 2PC4081R 2PC4081 2PC4081Q 2PC4081S 2PC4617
    Text: Philips Semiconductors Small-signal Transistors Selection guide SURFACE-MOUNT DEVICES NPN GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) PNP COMPL. PAGE 2PC4081 SC-70 40 100


    Original     		PDF 2PC4081 SC-70 2PA1576 2PC4081Q 2PA1576Q 2PC4081R 2PA1576R 2PC4081S 16w SOT23 sc-59 SOT23 NPN SOT323 2PD601A 2PC4081R 2PC4081 2PC4081Q 2PC4081S 2PC4617

    Untitled

    Abstract: No abstract text available
    Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) I-PACK 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor


    Original     		PDF KSA1242

    KSA1242

    Abstract: No abstract text available
    Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor


    Original     		PDF KSA1242 KSA1242

    Untitled

    Abstract: No abstract text available
    Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor


    Original     		PDF KSA1242 O-251 KSA1242YTU KSA1242OTU

    2SD1899-Z

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SD1899-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 4 • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.25 V


    Original     		PDF 2SD1899-Z 2SD1899-Z

    Untitled

    Abstract: No abstract text available
    Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor


    Original     		PDF KSA1242 KSA1242OTU KSA1242YTU O-251

    KSA1242

    Abstract: No abstract text available
    Text: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor


    Original     		PDF KSA1242 KSA1242

    2SA1150

    Abstract: 2SA115 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC2710. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SA115 2SC2710

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SC2710

    TC-1818A

    Abstract: TC181 2SD1899-Z
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1899-Z NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION <R> PACKAGE DRAWING Unit: mm The 2SD1899-Z is designed for Audio Frequency Amplifier and 5.5 ±0.2 4 • High hFE: hFE = 100 to 400 • Low VCE(sat): VCE(sat) ≤ 0.25 V


    Original     		PDF 2SD1899-Z 2SD1899-Z TC-1818A TC181

    2SA1150

    Abstract: 2SC2710
    Text: 2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1150 Low Frequency Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC2710. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1150 2SC2710. 2SA1150 2SC2710

    KTA1266L

    Abstract: KTC3198L
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3198L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Linearity of Iif e : hFE 2 =100(Typ.) at V Ce =6V, Ic=150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.) at (f=lkHz).


    OCR Scan     		PDF KTC3198L 150mA KTA1266L. 150mA 100mA, 30MHz 100Hz KTA1266L KTC3198L

    KTA1266L

    Abstract: KTC3198L
    Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. KTC3198L EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Linearity of h |.|. : hFE 2 =100(Typ.) at V ce=6V, Ic=150mA : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.) at (f=lkHz).


    OCR Scan     		PDF KTC3198L 150mA KTA1266L. 150mA 100mA, 30MHz 100Hz KTA1266L KTC3198L

    KTC3198

    Abstract: KTA1266 transistor KTC3198
    Text: SEMICONDUCTOR TECHNICAL DATA KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent I Linearity : hFE 2 =100(Typ.) at VCE=6V, Ic=150mA. : hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.) • Low Noise : NF=ldB(Typ.) at f=lkHz.


    OCR Scan     		PDF KTC3198 150mA. KTA1266 270Hz KTC3198 KTA1266 transistor KTC3198

    Untitled

    Abstract: No abstract text available
    Text: KSA1242 PNP EPITAXIAL SILICON TRANSISTOR CAMERA FLASH APPLICATIONS MEDIUM POWER AMPLIFIER • hFE= 100-320 VCE = -2V, lc = -0.5V • hFE= 70(Min) (V ce = -2V, lc = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max) ABSOLUTE MAXIMUM RATINGS Rating Unit


    OCR Scan     		PDF KSA1242

    GE-84

    Abstract: No abstract text available
    Text: KSA1242 PNP EPITAXIAL SILICO N TRAN SISTO R CAMERA FLASH APPLICATIONS MEDIUM POWER AMPLIFIER . hFE = 100-320 VCE = -2V, lc = -0.5V . hFE = 70(Min) (VCE = “2V, lc = -4A) • Low Saturation Voltage: V CE(sat) = -1V (Max) ABSOLUTE MAXIMUM RATINGS Rating Unit


    OCR Scan     		PDF KSA1242 GE-84

    width10ms

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1242 STROBO FLASH APPLICATIONS. Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 6.8 MAX. FEATURES: . hFE=100~ 320 VCe =-2V, Ic =-0.5A . hFE=70(Min.) (Vc e =-2V, Ic=-4A) . Low Collector Saturation Voltage : VcE(sat)=~l-OV(Max.) (Ic=-4A, Ib =-0.1A)


    OCR Scan     		PDF 2SA1242 -10mA, A1242 width10ms

    Untitled

    Abstract: No abstract text available
    Text: 2SA1242 TOSHIBA 2 S A 1 242 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS MEDIUM POWER AMPLIFIER APPLICATIONS hFE = 100-320 (Vc e = -2 V , IQ = -0 .5 A) hFE = 70 (Min.) (VCE = -2 V , IC = -4 A ) Low Collector Saturation Voltage


    OCR Scan     		PDF 2SA1242