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    Abstract: No abstract text available
    Text: BVDSS = 650 V RDS on typ = 2.3 Ω HFW5N65S / HFI5N65S ID = 4.2 A 650V N-Channel MOSFET D2-PAK I2-PAK FEATURES  Originative New Design HFW5N65S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFI5N65S 1.Gate 2. Drain 3. Source


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