2SD1258
Abstract: No abstract text available
Text: Power Transistors 2SD1258 2SD1258 Silicon NPN Triple-Diffused Planar Type Package Dimensions High DC Current Gain hFe , Power Amplifier • Features • High DC current gain (Iife) • Good linearity of DC current gain (hra) • “N Type” package configuration with a cooling fin for direct soldering
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2SD1258
100-c
2SD1258
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2SD1834
Abstract: T100
Text: 2SD1834 Transistors Medium Power Transistor 60V, 1A 2SD1834 zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. MPT3 1.5 2.5 4.0
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2SD1834
2SD1834
T100
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2SD2120
Abstract: No abstract text available
Text: Ordering number:EN3239 NPN Epitaxial Planar Silicon Transistor 2SD2120 General Driver Applications Features Package Dimensions • Darlington connection Contains bias resistance, damper diode . · High DC current gain. · Less dependence of DC current gain on temperature.
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EN3239
2SD2120
2SD2120]
2SD2120
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2SD1755
Abstract: VUO60
Text: Power Transistors 2SD1755 2S D 1755 Silicon NPN Epitaxial Planar Type Package D im ensions High DC C urrent Gain hFE , Pow er A m plifier U n i t ! mm • Features • High DC current gain 3.7 max 7 .3 ma x. (I i f e ) 3 .2 m a x. 0. 9 ± 0 . 1 0.5max. • Good linearity of DC current gain (htE)
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2SD1755
2SD1747/A)
2SD1755
VUO60
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2SD2144S
Abstract: 2SD2114K SC-72 T146
Text: 2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor 20V, 0.5A 2SD2114K / 2SD2144S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat).
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2SD2114K
2SD2144S
500mA
2SD2114K
SC-59
15Min.
2SD2144S
SC-72
T146
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freewheeling diode 5A
Abstract: B13007D JESD97 STB13007DT4 T0-263
Text: STB13007DT4 High voltage fast-switching NPN power transistor General features • Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range ■ High voltage capability ■ Integrated free-wheeling diode
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STB13007DT4
2002/93/EC
T0-263)
freewheeling diode 5A
B13007D
JESD97
STB13007DT4
T0-263
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BF520
Abstract: ZTX1049A NPN Transistor VCEO 80V 100V TS16949 ZTX1149A transistor bf 494 ZTX114
Text: ZTX1049A NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FEATURES • VCEV = 80V • Very low saturation voltages • High gain • 20 amps pulse current APPLICATIONS • LCD backlight converters E-Line • Emergency lighting • DC-DC converters PINOUT
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ZTX1049A
BF520
ZTX1049A
NPN Transistor VCEO 80V 100V
TS16949
ZTX1149A
transistor bf 494
ZTX114
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NTE2666
Abstract: NTE2667
Text: NTE2666 NPN & NTE2667 (PNP) Silicon Complementary Transistors High Frequency Driver Features: D DC Current Gain Specified to 5 Amperes D Collector-Emitter Sustaining Voltage D High Current Gain - Bandwidth Product Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE2666
NTE2667
500mA,
NTE2666
NTE2667
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Untitled
Abstract: No abstract text available
Text: Ordering n u m b e r:EN 3881 2SB1510/2SD2284 No.3881 SA\YO PNP/NPN Epitaxial Planar Silicon Transistors 60V/3A Driver Applications A pplications • Motor drivers, hammer drivers, relay drivers. Features • High DC current gain. . Good dependence of DC current gain.
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2SB1510/2SD2284
2SB1510
2084B
M2SD2284
D151MH,
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3L26
Abstract: ST13007DFP
Text: ST13007DFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ ■ ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE
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ST13007DFP
O-220FP
3L26
ST13007DFP
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Untitled
Abstract: No abstract text available
Text: UTC X1049A N P N EPITAXIAL SILICON TRANSISTOR HIGH GAIN TRANSISTOR FEATURES *VCEV = 80V *High Gain *20 Amps pulse current APPLICATIONS *LCD Backlight converters *Emergency lighting *DC-DC converters 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25℃
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X1049A
100mA
100ms
QW-R201-061
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Untitled
Abstract: No abstract text available
Text: NPN SILICON TRANSISTOR KSE3055T GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High Current Gain-Bandwidth Product fT = 2Ub (MIN ABSOLUTE MAXIMUM RATINGS Symbol C haracteristic Collector Base Voltage Collector-Emitter Voltage
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KSE3055T
200aA,
500nA,
500kHz
300nA,
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Untitled
Abstract: No abstract text available
Text: KSE2955T PNP SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES • High Current Gain-Bandwidth Product tT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol
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KSE2955T
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IT205
Abstract: No abstract text available
Text: KSE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES * High Current Gain-Bandwidth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic V cB O Symbol
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KSE3055T
200mA,
IT205
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2SD1118
Abstract: 5A Solid State RELAY IC
Text: 2SD1118 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH SPEED SWITCHING Outline Drawings Features TO-220AB High speed switching High D.C. current gain Low saturation voltage High reliability Applications Switching regulators DC-DC converter 1 : Base
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2SD1118
O-220AB
SC-46
2SD1118
5A Solid State RELAY IC
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2SD852
Abstract: 2SD1383K T146 2sd852 transistor
Text: 2SD1383K Transistors High-gain Amplifier Transistor 32V , 0.3A 2SD1383K zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD852. 2SD1383K
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2SD1383K
2SD852.
2SD852
2SD1383K
T146
2sd852 transistor
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2N5686
Abstract: 2N5684 PNP 2N5684 amplifier 2N5686
Text: ON Semiconductort PNP High-Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – • • IC Continuous = 50 Amperes. DC Current Gain –
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2N5684
2N5686
r14525
2N5684/D
2N5686
2N5684
PNP 2N5684
amplifier 2N5686
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Untitled
Abstract: No abstract text available
Text: 2SD2142K Transistors High-gain Amplifier Transistor 30V, 0.3A 2SD2142K zDimensions (Unit : mm) zFeatures 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA) 2) High input impedance. SMT3 2.9 1.1 0.4 0.8 (3) 1.6
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2SD2142K
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JE2955
Abstract: MJE2955 mje2955 data JE2955K MJE3055K mje3055 MJE2955K transistor MJE3055 mje3055 data SAA 1283
Text: MJE2955 SILICON MJE2955K HIGH POWER PNP SILICON TRANSISTORS 10 AMPERE POWER TRANSISTORS PNP SILICON . . . designed for use in general-purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current-Gain — Bandwidth Product — f j = 2.0 M H Z (Min)
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MJE2955
MJE2955K
MJE3055,
MJE3055K
MJE2955-Case
MJE2955K-Case
Operating95
JE2955
MJE2955
mje2955 data
JE2955K
MJE3055K
mje3055
MJE2955K
transistor MJE3055
mje3055 data
SAA 1283
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2SD2156
Abstract: 2SD215 2SD2156A
Text: Power Transistors 2SD215Ó, 2SD2156A 2SD2156, 2SD2156A Silicon NPN Triple-Diffused Planar Type High DC Current Gain • Features Package Dimensions Power Amplifier h FE , • High DC c u rre n t gain (Iife) (Iife ) • “Full Pack” package for simplified m ounting on a heat sink with one
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2SD215Ã
2SD2156A
2SD2156,
2SD2156
2SD215
2SD2156A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE TPC6601 LOW ELECTRICITY CONSUMPTION FOR MOBILE BATTERY. LOW VOLTAGE, HIGH SPEED CURRENT SWITCHING APPLICATIONS. DC/DC CONVERTER etc. •High DC Current Gain : hFE=200 to 500 IC=-0.3A •Low Saturation Voltage : VCE(sat)=-0.2V (Max.)
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TPC6601
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2SC5738
Abstract: No abstract text available
Text: 2SC5738 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)
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2SC5738
2SC5738
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Untitled
Abstract: No abstract text available
Text: 2SC6000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 250 to 400 IC = 2.5 A • Low collector-emitter saturation: VCE (sat) = 0.18 V (max) •
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2SC6000
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2SC5784
Abstract: No abstract text available
Text: 2SC5784 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
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2SC5784
2SC5784
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