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    HIGH FREQUENCY BJT Search Results

    HIGH FREQUENCY BJT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    HIGH FREQUENCY BJT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		PDF FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz

    FPD7612P70

    Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		PDF FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz 11GHz) 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R

    FPD6836P70

    Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
    Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.


    Original     		PDF FPD6836P70 FPD6836P70 22dBm 18GHz 11GHz) 18GHz) FPD6836P70-AG FPD6836P70-AJ FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p

    FPD6836P70

    Abstract: No abstract text available
    Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.


    Original     		PDF FPD6836P70 FPD6836P70 22dBm 18GHz FPD6836P70-AG FPD6836P70-AJ FPD6836P70SQ

    FPD7612P70

    Abstract: PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		PDF FPD7612P70 FPD7612P70 22dBm 85GHz 18GHz 11GHz) PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code

    FPD200P70

    Abstract: TL11 TL22 l420 FPD200P70SR
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


    Original     		PDF FPD200P70 FPD200P70 25mmx200mm 20dBm 26GHz 15GHz FPD200P70-AJ TL11 TL22 l420 FPD200P70SR

    FPD200P70

    Abstract: No abstract text available
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


    Original     		PDF FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ

    fpd200p70

    Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


    Original     		PDF FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor

    Untitled

    Abstract: No abstract text available
    Text: L6699 Enhanced high voltage resonant controller Datasheet − production data Features • Symmetrical duty cycle, variable frequency control of resonant half bridge ■ Self-adjusting adaptive deadtime ■ High-accuracy oscillator ■ 2-level OCP: frequency-shift and immediate


    Original     		PDF L6699

    L6699

    Abstract: L4984 smps resonant llc full bridge L6699DTR LLC resonant full bridge schematic application l6562 a comparison of half bridge resonant converter resonant half bridge
    Text: L6699 Enhanced high voltage resonant controller Datasheet − production data Features • Symmetrical duty cycle, variable frequency control of resonant half bridge ■ Self-adjusting adaptive deadtime ■ High-accuracy oscillator ■ 2-level OCP: frequency-shift and immediate


    Original     		PDF L6699 SO16N L6699 L4984 smps resonant llc full bridge L6699DTR LLC resonant full bridge schematic application l6562 a comparison of half bridge resonant converter resonant half bridge

    L6699

    Abstract: L4984 L6699D LLC resonant full bridge schematic half bridge smps resonant full bridge schematic resonance half bridge converter half bridge smps controller L6562 Application Note L6699DTR
    Text: L6699 Enhanced high voltage resonant controller Datasheet − production data Features • Symmetrical duty cycle, variable frequency control of resonant half bridge ■ Self-adjusting adaptive deadtime ■ High-accuracy oscillator ■ 2-level OCP: frequency-shift and immediate


    Original     		PDF L6699 SO16N L6699 L4984 L6699D LLC resonant full bridge schematic half bridge smps resonant full bridge schematic resonance half bridge converter half bridge smps controller L6562 Application Note L6699DTR

    TCP202 10x

    Abstract: TDS700 P6243 11A32 TCP0030 TCPA400 TCPA300 Tektronix A622 Tektronix* A622 probe TCP404XL
    Text: 115-2012:QuarkCatalogTempNew 8/13/12 5:11 PM Page 115 1 Active and Current Probes TEST & MEASUREMENT Active Probes Accurate High-Frequency Measurements with Reduced Probe Loading For testing high-impedance, high-frequency circuit elements which demand minimal loading, our portfolio of active voltage probes provides the proper signal bandwidth


    Original     		PDF P6205 TCPA300 TCPA400 TCP303, TCP305 TCP312 TCP404XL TCPA400 TCP202 10x TDS700 P6243 11A32 TCP0030 Tektronix A622 Tektronix* A622 probe

    6r280

    Abstract: fet mixer RF2431 MIXER SCHEMATIC DIAGRAM NF 846
    Text: RF2431 8 HIGH FREQUENCY LNA/MIXER Typical Applications • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • Spread-Spectrum Communication Systems • General Purpose Frequency Conversion


    Original     		PDF RF2431 RF2431 1800MHz 2400MHz 6r280 fet mixer MIXER SCHEMATIC DIAGRAM NF 846

    HV82

    Abstract: No abstract text available
    Text: HV825 High Voltage EL Lamp Driver IC Features General Description Processed with HVCMOS technology 1.0 to 1.6V operating supply voltage DC to AC conversion Output load of typically up to 6.0nF Adjustable output lamp frequency Adjustable converter frequency


    Original     		PDF HV825 HV825 DSFP-HV825 C103008 HV82

    11-pin pager board

    Abstract: C4722 motorola semiconductor RF CATALOG MC2800 MC2800SYNEVK MMBR941LT1 MMBT3904LT1 MMBT3906LT1 MMBV609LT1 SM5166AV
    Text: Freescale Semiconductor, Order Inc.this document by MC2800SYNEVK/D MC2800SYNEVK Advance Information FLEX  Paging RF/IF Frequency This document contains the information of a frequency synthesized receiver prototype for FLEX roaming paging platform. This FLEX paging receiver board is a high


    Original     		PDF MC2800SYNEVK/D MC2800SYNEVK MMBR941LT1, MC2800 SM5166AV 11-pin pager board C4722 motorola semiconductor RF CATALOG MC2800SYNEVK MMBR941LT1 MMBT3904LT1 MMBT3906LT1 MMBV609LT1

    Untitled

    Abstract: No abstract text available
    Text: RF2052 HIGH PERFORMANCE WIDEBAND RF PLL/VCO WITH INTEGRATED RF MIXER Package: QFN, 32-Pin, 5mmx5mm Features   VCO 30MHz to 2.5GHz Frequency Range Fractional-N Synthesizer Synth Very Fine Frequency Resolution 1.5Hz for 26MHz Reference Frac-N sequence


    Original     		PDF RF2052 32-Pin, 30MHz 26MHz 18dBm com/rf205x. 32-Pin 25pcs RF2052SB

    C4722

    Abstract: CFWC450F BLM11B750S MC2800 MC2800SYNEVK MMBR941LT1 MMBT3904LT1 MMBT3906LT1 MMBV609LT1 SM5166AV
    Text: Order this document by MC2800SYNEVK/D MC2800SYNEVK Advance Information  Paging RF/IF Frequency FLEX Synthesizer Receiver This document contains the information of a frequency synthesized receiver prototype for FLEX roaming paging platform. This FLEX paging receiver board is a high


    Original     		PDF MC2800SYNEVK/D MC2800SYNEVK MMBR941LT1, MC2800 SM5166AV C4722 CFWC450F BLM11B750S MC2800SYNEVK MMBR941LT1 MMBT3904LT1 MMBT3906LT1 MMBV609LT1

    transistor NEC D 882 p

    Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A
    Text: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP


    Original     		PDF NE856 transistor NEC D 882 p transistor c 1349 Transistor BF 479 NE85630-T1-A

    BF 3027

    Abstract: transistor T1J NESG2101M05-T1-A NESG2101M05 S21E nec 2562 GA1060 14851 mje 2055 1GP20
    Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:


    Original     		PDF NESG2101M05 OT-343 NESG2101M05 BF 3027 transistor T1J NESG2101M05-T1-A S21E nec 2562 GA1060 14851 mje 2055 1GP20

    transistor T1J

    Abstract: NEC 9319 bjt npn
    Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:


    Original     		PDF NESG2101M05 OT-343 transistor T1J NEC 9319 bjt npn

    transistor gl 1117

    Abstract: NEC NESG2101M05 IC 7408 1GP20 NESG2101M05 NESG2101M05-T1 S21E re 10019
    Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:


    Original     		PDF NESG2101M05 OT-343 NESG2101M05 461e-12 9e-15 transistor gl 1117 NEC NESG2101M05 IC 7408 1GP20 NESG2101M05-T1 S21E re 10019

    ECU-V1H470JCG

    Abstract: No abstract text available
    Text: RF RF2431 HIGH FREQUENCY LNA/MIXER MICRO-DEVICES Typical Applications • UHF Digital and Analog Receivers Commercial and Consumer Systems • Digital Communication Systems Portable Battery Powered Equipment • Spread Spectrum Communication Systems General Purpose Frequency Conversion


    OCR Scan     		PDF RF2431 RF2431 250MHz 50MHz ERJ-6ENFJ806 ERJ-6GEYJ470 ECU-V1H104KBW ECU-V1H470JCG ECU-V1H102JCX ECU-V1H470JCG

    ECUV1H102JCX

    Abstract: ATC HL_12 0805CS-030XMBC nfb50 ecu connectors RF2431PCBA RF2431 SOIC-16 ECUV1H470JCG MIXER SCHEMATIC DIAGRAM
    Text: RF RF2431 MICRO-DEVICES HIGH FREQUENCY LNA/MIXER Typical Applications • UHF Digital and Analog Receivers Commercial and Consumer Systems • Digital Communication Systems Portable Battery Powered Equipment • Spread Spectrum Communication Systems General Purpose Frequency Conversion


    OCR Scan     		PDF RF2431 RF2431 at010 50MHz /1008CT-040XM MPSS100-3C RF2431PCB-L 2400MHz 00DD731 ECUV1H102JCX ATC HL_12 0805CS-030XMBC nfb50 ecu connectors RF2431PCBA SOIC-16 ECUV1H470JCG MIXER SCHEMATIC DIAGRAM

    transistor NEC D 882

    Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST DESCRIPTION


    OCR Scan     		PDF NE856 24-Hour transistor NEC D 882 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55