MA2DF31
Abstract: No abstract text available
Text: Contribute to power loss with high speed trr and low VF 300V/5A Fast Recovery Diode MA2DF31 Overview MA2DF31 is the fast recovery diode suited for high voltage and high frequency rectification. With high speed trr and low VF characteristics by the new structure, this diode can reduce the power loss and offer
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00V/5A
MA2DF31
MA2DF31
O-220D
O-220D-1
M00882AE
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Untitled
Abstract: No abstract text available
Text: Enhanced downsizing and power saving in power supply circuits in mobile applications 1 to 1.5A class Schottky Barrier Diode MA21Dx×/MA22D×× Series Overview This newly developed 1 to 1.5A class of Schottky barrier diode is compact and high-performance, suitable for power
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MA21D×
/MA22D×
M00720CE
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MA21D34
Abstract: power supply mini laptop MA22D36
Text: Enhanced downsizing and power saving in power supply circuits in mobile applications 1 to 1.5A class Schottky Barrier Diode MA21Dx×/MA22D×× Series Overview This newly developed 1 to 1.5A class of Schottky barrier diode is compact and high-performance, suitable for power
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MA21D×
/MA22D×
M00720AE
MA21D34
power supply mini laptop
MA22D36
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MA21D34
Abstract: No abstract text available
Text: Enhanced downsizing and power saving in power supply circuits in mobile applications 1 to 1.5A class Schottky Barrier Diode MA21Dx×/MA22D×× Series Overview This newly developed 1 to 1.5A class of Schottky barrier diode is compact and high-performance, suitable for power
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MA21D×
/MA22D×
M00720BE
MA21D34
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PUB4753
Abstract: PU7457
Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation
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PUB4753
PU7457)
PUB4753
PU7457
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PU7457
Abstract: PUB4753
Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation
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PUB4753
PU7457)
PU7457
PUB4753
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SMP1334-084LF: 100 W High-Power Silicon PIN Diode Applications • Low-loss, high-power switches Low-distortion attenuators Features High RF power handling: 100 W Low thermal resistance: 10 °C/W Low series resistance: 0.45 Ω typical @ 100 mA
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SMP1334-084LF:
JSTD-020)
SQ04-0074.
SMP1334-084LF
202999B
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PDF
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Untitled
Abstract: No abstract text available
Text: Panasonic Power Transistor Arrays F-MOS FETs PU7457 S ilicon N-Channel Power F-M OS (with built-in zener diode) • Features • High avalanche energy capability • Withstanding high electrostatic voltage • No secondary breakdown • High breakdown voltage, large allowable power dissipation
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PU7457
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900 nm LED
Abstract: DIODE NU CND0201A
Text: Panasonic IrDA Compliant Transceiver CND0201 A Overview •T he Optical Transmission Module, CND0201A is incorporating a high-speed AIGaAs infrared light emitting diode, a high-speed PEN photo-diode and an integrated signal processing circuit. The module is conformable to IrDA1.2a(Low Power Type)physical Layer specification.
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CND0201
CND0201A
900 nm LED
DIODE NU
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PDF
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Untitled
Abstract: No abstract text available
Text: Panasonic IrDA Compliant Transceiver CND0201 A • ■ Overview •The Optical Transmission Module, CND0201A is incorporating a high-speed AIGaAs infrared light emitting diode, a high-speed PIN photo-diode and an integrated signal processing circuit. The module is conformable to IrDA1.2a(Low Power Type)physical Layer specification.
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CND0201
CND0201A
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN65 G aAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • High-power output, high-efficiency : PQ = 5.5 mW typ. • Good radiant power output linearity with respect to input current
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100mA
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA4401L GaAIAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 10 mW typ. • Fast response and high-speed modulation capability : fc = 20 MHz (typ.)
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LNA4401L
0102Q.
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN77L GaAIAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 1 8 mW typ. • Fast response and high-speed modulation capability : fc = 20 MHz (typ.)
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LN77L
0102Q.
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s 700 40
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN184 GaAIAs Infrared Light Em itting Diode Light source for distance measuring systems • Features • High-power output, high-efficiency : PQ = 5 mW typ. • Fast response and high-speed modulation capability : tr, t( = 20 ns(typ.)
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LN184
100Hz
100mA
s 700 40
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66 G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : PQ = 8 mW typ. Light emitting spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current
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0102Q.
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PDF
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66 G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : PQ = 8 mW typ. Light emitting spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current
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IR Blue Light infrared
Abstract: LN66
Text: Panasonic Infrared Light Emitting Diodes LN66 NC GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency :P0 = 8 mW (typ.) Light emitting spectrum suited for silicon photodetectors
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100mA
IR Blue Light infrared
LN66
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN54 G aAs Infrared Light Em itting Diode Unit : mm For optical control systems • Features • High-power output, high-efficiency : PQ = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors
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LN66F
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66F GaAs Infrared Light Emitting Diode For light source of remote control systems • Features • • • • High-power output, high-efficiency : Ie = 13.0 mW/sr min. Light emitting spectrum suited for silicon photodetectors
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LN66F
LN66F
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN155 G aAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 6 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 940 nm (typ.)
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LN155
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN175 GaAIAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 900 nm (typ.)
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LN175
100mA
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN172 GaAIAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 12 mW typ. • Light emitting spectrum suited for silicon photodetectors : A,P = 900 nm (typ.)
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LN172
100mA
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN155 G aAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 6 mW typ. • Light emitting spectrum suited for silicon photodetectors : A,P = 940 nm (typ.)
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LN155
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LN66A
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN66A G aAs Infrared Light Emitting Diode For optical control systems • Features • • • • • High-power output, high-efficiency : Ie = 9 mW /sr min. Light emitting spectrum suited for silicon photodetectors
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LN66A
0102Q.
LN66A
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