PU7457 Search Results

PU7457 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PU7457		Unknown	N-Channel Enhancement Mode MOSFET Array		Original	PDF
PU7457		Panasonic	N-Channel Power F-MOS FET (with built-in zener diode)		Original	PDF
PU7457		Panasonic	TRANS MOSFET N-CH 100±15V 3A 10Plastic SIL		Original	PDF
PU7457		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF

PU7457 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
zener diode power Abstract: DIODE C155 PU7457 D 1652 transistor C155S Text: Power Transistor Arrays F-MOS FETs PU7457 Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation	Original	PU7457 zener diode power DIODE C155 PU7457 D 1652 transistor C155S	PDF
PU7457 Abstract: PUB4757 Text: Power Transistor Arrays F-MOS FETs PUB4757 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation	Original	PUB4757 PU7457) PU7457 PUB4757	PDF
2SK3585 Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)	Original	PUB4753 PU7457) PUB4701 PUB4702 450/600o 380/680o SIP10-A1 2SK0301 2SK663) 2SK301) 2SK3585 Infrared-Sensor 2SK3578 2SK3584 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent	PDF
PU7457 Abstract: No abstract text available Text: Panasonic P ow er Transistor Arrays F -M O S FETs PU7457 S ilic o n N - C h a n n e l P o w e r F - M O S (w ith b u ilt - i n z e n e r d io d e ) I Features High avalanche energy capability Withstanding high electrostatic voltage No secondary breakdown	OCR Scan	PU7457 10-Lead PU7457	PDF
PU7457 Abstract: PUB4753 Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation	Original	PUB4753 PU7457) PU7457 PUB4753	PDF
Untitled Abstract: No abstract text available Text: Panasonic Power Transistor Arrays F-MOS FETs PU7457 S ilicon N-Channel Power F-M OS (with built-in zener diode) • Features • High avalanche energy capability • Withstanding high electrostatic voltage • No secondary breakdown • High breakdown voltage, large allowable power dissipation	OCR Scan	PU7457	PDF
Untitled Abstract: No abstract text available Text: Panasonic Power Transistor Arrays F-MOS FETs PU7457 S ilicon N -C hannel P ow er F-M O S FET (with b u ilt-in zener d io d e ) • • • 9 • 9 Features High avalanche energy capacity High electrostatic breakdown voltage No secondary breakdown High breakdown voltage, large allowable power dissipation	OCR Scan	PU7457	PDF
PUB4753 Abstract: PU7457 Text: Power Transistor Arrays F-MOS FETs PUB4753 (PU7457) Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation	Original	PUB4753 PU7457) PUB4753 PU7457	PDF