power IGBT MOSFET transistor GTO SCR di
Abstract: MOSFET IGBT THEORY AND APPLICATIONS gto thyristor driver ic Hockey Puck scr 1000a gto Gate Drive circuit gct thyristor 6 thyristor driver circuit GTO thyristor driver MITSUBISHI GATE TURN-OFF THYRISTOR scr powerex snubber capacitor
Text: New High Power Semiconductors: High Voltage IGBTs and GCTs Eric R. Motto*, M. Yamamoto* * Powerex Inc., Youngwood, Pennsylvania, USA * Mitsubishi Electric, Power Device Division, Fukuoka, Japan Abstract: Ultra high power, high voltage, power electronics is on the verge of a new era. Two new power
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Abstract: No abstract text available
Text: APT45GP120J 1200V The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
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APT45GP120J
APT45GP120J
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A2149
Abstract: No abstract text available
Text: APT75GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT75GP120J
A2149
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Untitled
Abstract: No abstract text available
Text: APT75GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT75GP120J
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APT40GP60B
Abstract: T0-247
Text: APT40GP60B 600V POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP60B
O-247
APT40GP60B
T0-247
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APT40GP60B
Abstract: T0-247 40A33 40gp60b2 40gp60b
Text: APT40GP60B 600V POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP60B
O-247
APT40GP60B
T0-247
40A33
40gp60b2
40gp60b
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25C1740
Abstract: 35GP120B2DF2 228F APT35GP120B T0-247 70A 1200V IGBTS 35GP120B
Text: APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120B
O-247
25C1740
35GP120B2DF2
228F
APT35GP120B
T0-247
70A 1200V IGBTS
35GP120B
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7463
Abstract: APT32GU30B T0-247
Text: APT32GU30B 300V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT32GU30B
O-247
7463
APT32GU30B
T0-247
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15gp60
Abstract: No abstract text available
Text: APT15GP60B 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP60B
O-247
APT15GP60B
T0-247
15gp60
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15gp60
Abstract: No abstract text available
Text: APT15GP60BD1 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP60BD1
O-247
APT15GP60BD1
T0-247
15gp60
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APT30DF120
Abstract: No abstract text available
Text: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT45GP120JDF2
APT45
APT30DF120
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35GP120
Abstract: 35GP120B2DF2 35GP120B 35GP120B2
Text: APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120B2DF2
35GP120
35GP120B2DF2
35GP120B
35GP120B2
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30 mhz power IGBT
Abstract: No abstract text available
Text: APT45GP120JDF2 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT45GP120JDF2
APT45ction
MIL-STD-750
30 mhz power IGBT
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15GP60BDF1
Abstract: 15gp60b APT15GP60BDF1 15GP60BDF 15gp60
Text: APT15GP60BDF1 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP60BDF1
O-247
APT15GP60BDF1
T0-247
15GP60BDF1
15gp60b
15GP60BDF
15gp60
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APT40GP60B
Abstract: APT40GP60S
Text: APT40GP60B APT40GP60S 600V POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP60B
APT40GP60S
O-247
APT40GP60B
APT40GP60S
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APT45GP120J
Abstract: IC 7430 IC 7430 datasheet
Text: APT45GP120J 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT45GP120J
APT45GP120J
IC 7430
IC 7430 datasheet
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Untitled
Abstract: No abstract text available
Text: APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT45GP120B
O-247
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Untitled
Abstract: No abstract text available
Text: APT15GP60B APT15GP60S 600V POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP60B
APT15GP60S
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IC 7427
Abstract: IC 7427 datasheet APT80GP60JDF3
Text: APT80GP60JDF3 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT80GP60JDF3
IC 7427
IC 7427 datasheet
APT80GP60JDF3
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APT40GP60JD1
Abstract: No abstract text available
Text: APT40GP60JD1 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP60JD1
APT40GP60JD1
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APT40GP60JDF2
Abstract: No abstract text available
Text: APT40GP60JDF2 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP60JDF2
APT40GP60JDF2
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APT15GP90B
Abstract: T0-247
Text: APT15GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP90B
O-247
APT15GP90B
T0-247
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Untitled
Abstract: No abstract text available
Text: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT80GP60J
Volta587)
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Untitled
Abstract: No abstract text available
Text: APT15GP60K 600V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT15GP60K
O-220
APT15GP60K
600V3
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