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    HIGH SENSITIVITY PHOTOTRANSISTOR Search Results

    HIGH SENSITIVITY PHOTOTRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    HIGH SENSITIVITY PHOTOTRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SMALL TYPE PHOTOTRANSISTOR PH110 FEATURES_ DESCRIPTION_ • HIGH SENSITIVITY lc = 400 |iA TYP, H = 50 |xW/cm2 • HIGH SPECTRAL SENSITIVITY Sensitivity active wavelength: 820 nm TYP The PH110 is a small type high sensitivity phototransistor


    OCR Scan     		PH110 PH110 SE310 b427S2S 00bS3G2 b427525 00bS303 PDF

    PH108A

    Abstract: No abstract text available
    Text: SMALL TYPE SILICON PHOTOTRANSISTOR PH108A FEATURES DESCRIPTION • SMALL PACKAGE 4.0 x 2.8 x 2.5 mm • HIGH SPECTRAL SENSITIVITY Sensitivity active wavelength: 820 nm TYP • HIGH SENSITIVITY II = 0.6 mA TYP @ V c e = 5 V, H = 0.5 mW/cm2 The PH108A is a small type high sensitivity phototransistor


    OCR Scan     		PH108A PH108A SE308 b427525 DDb5300 PDF

    high sensitivity phototransistor

    Abstract: KPCB0001EA S4404-01 SE-171
    Text: PHOTOTRANSISTOR Phototransistor S4404-01 High sensitivity phototransistor S4404-01 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications l Miniature plastic package with lens l Visible-cut package l High sensitivity: 2.8 mA 1000 lx


    Original     		S4404-01 S4404-01 SE-171 KPTR1002E01 high sensitivity phototransistor KPCB0001EA PDF

    high sensitivity phototransistor

    Abstract: IR Emitters PT126
    Text: PT126C EE1 FEATURES • Angle of half sensitivity=±45 • High sensitivity • Fast response time DESCRIPTIONS • The PT126C EE1 is a high speed and high sensitivity phototransistor; molded. • The device is spectrally matched with IR emitters Absolute Maximum Rating Ta=25°C


    Original     		PT126C high sensitivity phototransistor IR Emitters PT126 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT Phototransistor KDT2001 Description - The KDT2001 is a high-sensitivity NPN silicon phototransistor. - Visible ray cut-off mold type : Spectral sensitivity : λ=700~1050nm : Peak sensitivity wavelength : λP=860nm - High reliability, Low power dissipation and Long life span.


    Original     		KDT2001 KDT2001 1050nm 860nm PDF

    mouse Phototransistor

    Abstract: phototransistor method time transistor 6c DPT-092-120 rise time of phototransistor DPT-092
    Text: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DPT-092-120 REV : PAGE : Phototransistor MODEL NO : PT928-6C/F1  Features : • Wide angle of half sensitivity=50 • High sensitivity • Fast response time  Description : The PT928-6C/F1 is a high speed and high sensitivity single phototransistor


    Original     		DPT-092-120 PT928-6C/F1 PT928-6C/F1 555mW/c mouse Phototransistor phototransistor method time transistor 6c DPT-092-120 rise time of phototransistor DPT-092 PDF

    Untitled

    Abstract: No abstract text available
    Text: Phototransistors PNZ0111 Silicon NPN Phototransistor Unit : mm ø5.08±0.15 4.8 max. For optical control systems Features High sensitivity 16.0±1.0 2.67±0.15 Wide spectral sensitivity Base pin for easy circuit design Wide directional sensitivity : θ = 80 deg. typ.


    Original     		PNZ0111 PDF

    KPCB0001EA

    Abstract: S2829 SE-171
    Text: PHOTOTRANSISTOR Phototransistor S2829 Subminiature package phototransistor S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications l Subminiature plastic package with lens l Visible-cut package l High sensitivity: 1.0 mA 1000 lx


    Original     		S2829 S2829 SE-171 KPTR1001E02 KPCB0001EA PDF

    VISIBLE LIGHT PHOTOTRANSISTOR

    Abstract: phototransistor visible light visible phototransistor high sensitivity phototransistor Phototransistor light detector Optical Receiver optical sensor VISIBLE LIGHT phototransistor datasheet the sensitivity of Optical Sensor
    Text: Sensors Phototransistor, side view type RPM-20PB The RPM-20PB is a phototransistor in a side-facing package. High sensitivity with φ1.85 lens. FApplications Optical control equipment Receiver for sensors FExternal dimensions Unit: mm FFeatures 1) High sensitivity.


    Original     		RPM-20PB RPM-20PB VISIBLE LIGHT PHOTOTRANSISTOR phototransistor visible light visible phototransistor high sensitivity phototransistor Phototransistor light detector Optical Receiver optical sensor VISIBLE LIGHT phototransistor datasheet the sensitivity of Optical Sensor PDF

    phototransistor 600 nm

    Abstract: phototransistor visible light high sensitivity phototransistor KPCB0001EA S4404-01 SE-171
    Text: Phototransistor S4404-01 High sensitivity phototransistor S4404-01 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package


    Original     		S4404-01 S4404-01 SE-171 KPTR1002E02 phototransistor 600 nm phototransistor visible light high sensitivity phototransistor KPCB0001EA PDF

    phototransistor 500-600 nm

    Abstract: phototransistor 600 nm S2829 KPCB0001EA SE-171
    Text: PHOTOTRANSISTOR Phototransistor S2829 Subminiature package phototransistor S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications l Subminiature plastic package with lens l Visible-cut package l High sensitivity: 1.0 mA 1000 lx


    Original     		S2829 S2829 SE-171 KPTR1001E02 phototransistor 500-600 nm phototransistor 600 nm KPCB0001EA PDF

    Untitled

    Abstract: No abstract text available
    Text: Phototransistor S4404-01 High sensitivity phototransistor S4404-01 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package


    Original     		S4404-01 S4404-01 SE-171 KPTR1002E02 PDF

    Untitled

    Abstract: No abstract text available
    Text: Phototransistor S4404-18 High sensitivity phototransistor S4404-18 is a high sensitivity phototransistor molded into a visible-cut plastic package. Features Applications Miniature plastic package with lens Tape start/end mark sensor for VTRs, etc. Visible-cut package


    Original     		S4404-18 S4404-18 SE-171 KPTR1005E01 PDF

    RPM-20PB

    Abstract: No abstract text available
    Text: Sensors Phototransistor, side view type RPM-20PB The RPM-20PB is a phototransistor in a side-facing package. High sensitivity with φ1.85 lens. FApplications Optical control equipment Receiver for sensors FExternal dimensions Unit: mm FFeatures 1) High sensitivity.


    Original     		RPM-20PB RPM-20PB PDF

    Untitled

    Abstract: No abstract text available
    Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		BPW17N 2002/95/EC 2002/96/EC BPW17N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		BPW16N 2002/95/EC 2002/96/EC BPW16N 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		BPW17N 2002/95/EC 2002/96/EC BPW17N 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		BPW16N 2002/95/EC 2002/96/EC BPW16N 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    PN168

    Abstract: PNA1801L
    Text: Phototransistors PNA1801L PN168 Silicon planar type Unit: mm 5.0±0.2 15.0±1.0 • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Small size, high output power, low cost • φ3 shell type plastic package


    Original     		PNA1801L PN168) PN168 PNA1801L PDF

    Untitled

    Abstract: No abstract text available
    Text: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		BPW17N 2002/95/EC 2002/96/EC BPW17N 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 PDF

    BPW20RF

    Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
    Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		BPV11 2002/95/EC 2002/96/EC BPV11 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW20RF BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g PDF

    Untitled

    Abstract: No abstract text available
    Text: BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		BPW76A, BPW76B 2002/95/EC 2002/96/EC BPW76 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 11-Mar-11 PDF

    VBPW77NB

    Abstract: BPW77NA BPW77NB npn phototransistor APPLICATION NOTE BpW77 BPW77 phototransistor 600 nm Silicon NPN Phototransistor
    Text: BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		BPW77NA, BPW77NB BPW77 2002/95/EC 2002/96/EC 18-Jul-08 VBPW77NB BPW77NA BPW77NB npn phototransistor APPLICATION NOTE BpW77 phototransistor 600 nm Silicon NPN Phototransistor PDF