Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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MMBT5551
MMBT5551
OT-23
O-236)
MMBT5551G-x-AE3-R
QW-R206-010.
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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Original
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MMBT5551
MMBT5551
MMBT5551L-x-AE3-R
MMBT5551G-x-AE3-R
OT-23
QW-R206-010.
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.
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Original
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MMBT5551
MMBT5551
MMBT5551L-x-AE3-R
MMBT5551G-x-AE3-R
OT-23
MMBT5551-x-AE3-R
QW-R206-010
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PDF
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MMBT2369
Abstract: MARK 1J HIGH SPEED SWITCHING NPN SOT23 MMBT2369 SOT23
Text: MMBT2369 NPN Switching Transistor MMBT2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. C E SOT-23 Mark: 1J B Absolute Maximum Ratings * T a Symbol
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MMBT2369
MMBT2369
100mA.
OT-23
MARK 1J
HIGH SPEED SWITCHING NPN SOT23
MMBT2369 SOT23
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2n2222a SOT23
Abstract: 2N2222A JAN 2N2222ACSM 2N2222A SOT23 transistor 2N2222A 2N2222A LCC1
Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
2n2222a SOT23
2N2222A JAN
2N2222ACSM
2N2222A
SOT23 transistor 2N2222A
2N2222A LCC1
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2n2222a SOT23
Abstract: 2N2222A LCC1 Transistor 2N2222A SOT23 transistor 2N2222A 2N2222A JAN npn switching transistor 60v 2N2222A 2N2222ACSM HIGH SPEED SWITCHING NPN SOT23
Text: 2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
2n2222a SOT23
2N2222A LCC1
Transistor 2N2222A
SOT23 transistor 2N2222A
2N2222A JAN
npn switching transistor 60v
2N2222A
2N2222ACSM
HIGH SPEED SWITCHING NPN SOT23
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ts 4141
Abstract: ts 4141 TRANSISTOR 2N2369A 2N2369ACSM
Text: 2N2369ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR
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2N2369ACSM
2N2369A
100MHz
140kHz
ts 4141
ts 4141 TRANSISTOR
2N2369ACSM
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Untitled
Abstract: No abstract text available
Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
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2N2369A
Abstract: 2N2369ACSM
Text: SEME 2N2369ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN
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2N2369ACSM
2N2369A
100mA
100MHz
100kHz
300ms,
2N2369ACSM
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2n2222a SOT23
Abstract: 2N2222A LCC1 2N2222ACSM 2N2222A
Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
2n2222a SOT23
2N2222A LCC1
2N2222ACSM
2N2222A
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PDF
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2N2222ACSM
Abstract: No abstract text available
Text: SEME 2N2222ACSM LAB HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad.
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2N2222ACSM
150mA
2N2222ACSM
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KTN2369AS
Abstract: KTN2369S KTN2369
Text: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. K TN 2369S/A S EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent High Frequency Characteristics. • Excellent Switching Characteristics. MAXIMUM RATINGS Ta=25°C
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KTN2369S/AS
KTN2369AS
KTN2369S
100mA,
KTN2369AS
KTN2369S
KTN2369
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Untitled
Abstract: No abstract text available
Text: MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings
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MMBT3646
OT-23
OT-23
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SOT-23 marking l31
Abstract: wA SOT23 SWITCHING F9 SOT23 marking va transistors C5 MARKING TRANSISTOR transistor dg sot-23 U/25/20/TN26/15/850/F9 SOT23 BCW29 BCW30 BFQ31
Text: FERRANTI * semiconductors FMMT2369 NPN Silicon Planar High Speed Switching Transistor DESCRIPTION This device is intended specificelly fo r use in high speed, lo w current switching epplications. Encapsulated in th e popular SOT-213 package these devices are designed specifically fo r use in thin and thick film
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FMMT2369
OT-23
Continuo00/300
FMMT2222
FMMT2369A
FMMT2369
BSV52
BSS82B
BSS82C
SOT-23 marking l31
wA SOT23 SWITCHING
F9 SOT23
marking va transistors
C5 MARKING TRANSISTOR
transistor dg sot-23
U/25/20/TN26/15/850/F9 SOT23
BCW29
BCW30
BFQ31
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2N2222A LCC1
Abstract: 2n2222a SOT23 2N2222ACSM-RH SOT23 transistor 2N2222A 2N2222ACSM 2n2222a surface tr 5551 Transistor 2N2222A 2N2222A TST001
Text: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)
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2N2222ACSM-RH
TST001
TST002
2N2222A LCC1
2n2222a SOT23
2N2222ACSM-RH
SOT23 transistor 2N2222A
2N2222ACSM
2n2222a surface
tr 5551
Transistor 2N2222A
2N2222A
TST001
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KTN2369AS
Abstract: KTN2369S HIGH SPEED SWITCHING NPN SOT23
Text: SEMICONDUCTOR TECHNICAL DATA K TN 2369S/A S EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent High Frequency Characteristics. • Excellent Switching Characteristics. A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX
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OCR Scan
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KTN2369S/AS
KTN2369AS
KTN2369S
100mA,
KTN2369AS
KTN2369S
HIGH SPEED SWITCHING NPN SOT23
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CMPT2369
Abstract: No abstract text available
Text: Central CMPT2369 TM Semiconductor Corp. DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching
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CMPT2369
CMPT2369
OT-23
125oC
100mA
100MHz
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MARKING CODE c2r sot 23
Abstract: No abstract text available
Text: Central" Semiconductor Corp. CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching applications.
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OCR Scan
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CMPT3646
OT-23
100MHz
300mA
300mA,
OT-23
26-September
MARKING CODE c2r sot 23
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.) ORDERING INFORMATION Ordering Number
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2SC2655
2SC2655Gx-AE3-R
2SC2655L-x-T9N-B
2SC2655Gx-T9N-B
2SC2655L-x-T9N-K
2SC2655Gx-T9N-K
2SC2655L-x-T9N-R
2SC2655Gx-T9N-R
OT-23
O-92NL
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2STR1160
Abstract: 2STR2160 JESD97
Text: 2STR1160 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Description
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2STR1160
OT-23
OT-23
2STR2160.
2STR1160
2STR2160
JESD97
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2STR1215
Abstract: 2STR2215 JESD97
Text: 2STR1215 Low voltage fast-switching NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits Applications
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2STR1215
OT-23
OT-23
2STR1215
2STR2215.
2STR2215
JESD97
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.) ORDERING INFORMATION Ordering Number
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2SC2655
2SC2655L-x-AE3-R
2SC2655L-x-T9N-B
2SC2655L-x-T9N-K
2SC2655L-x-T9N-R
2SC2655Gx-AE3-R
2SC2655Gx-T9N-B
2SC2655Gx-T9N-K
2SC2655Gx-T9N-R
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: 2STR1215 LOW VOLTAGE FAST-SWITCHING HIGH GAIN NPN POWER TRANSISTOR Features • VERY LOW COLLECTOR-EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAST-SWITCHING SPEED ■ IN COMPLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE ■ MINIATURE SOT-23 PLASTIC PACKAGE
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2STR1215
2002/93/EC
OT-23
OT-23
2STR1215
2STR2215
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2STR1230
Abstract: 2STR2230 JESD97
Text: 2STR1230 Low voltage fast-switching NPN power transistor General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits ■
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2STR1230
OT-23
2002/93/EC
OT-23
2STR2230.
2STR1230
2STR2230
JESD97
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