lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List
|
Original
|
HD49323A
HA12134A
HA12141N
HA12155N
HA12163
HA12167F
HA12173
HA12179F
HA12181F
HA12187F
lvc16244
BC240
2sk3174
CBT1G125
LV2GT14A
HC32 Hitachi
HA13557A
transistor 2SC1162
H8 hitachi programming manual
30204SP
|
PDF
|
2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
|
Original
|
3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
|
PDF
|
2SJ486
Abstract: Hitachi 2SJ
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
|
PDF
|
2SJ1334
Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
Text: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
|
Original
|
HA16142P/FP
ADE-504-006
DO-35
DO-41
HA16142P/FP
2SJ1334
2SK3235
HSK81
Hitachi DSAUTAZ006
HA16141
|
PDF
|
2SJ484
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
|
PDF
|
2SJ483
Abstract: Hitachi 2SJ
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
|
PDF
|
TO220CFM
Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
Text: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)
|
Original
|
2SK2927*
O-220
2SK2928*
2SK2929*
2SK2930*
2SK2931*
TO220CFM
2SK2554
TO-220CFM
to-3p(i)d series
HAT1020R
HAT1021R
HAT1023R
HAT1024R
HAT1026R
HAT2016R
|
PDF
|
hitachi mosfet audio
Abstract: D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317
Text: Power MOSFET Quick Reference Literature Order Number Revision Number Hitachi Semiconductor Author Name When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole
|
Original
|
O-220
HAF2001
500pcsxN)
O-92MOD
O-126MOD
O-126FM
O-220AB
O-220FM
O-220C
SP-10
hitachi mosfet audio
D4L DIODE
2SK2830
2SK2225
2SJ214LS
2SK1919LS
2sk2829
Hitachi MOSFET
2SK1058
transistors 2SK1317
|
PDF
|
2SJ486
Abstract: Hitachi 2SJ DSA003642
Text: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512A Z 2nd. Edition Jul. 1997 Features • Low on-resistance R DS(on) = 0.5 Ω typ. (at V GS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline MPAK
|
Original
|
2SJ486
ADE-208-512A
2SJ486
Hitachi 2SJ
DSA003642
|
PDF
|
2SJ483
Abstract: Hitachi 2SJ DSA003642
Text: 2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 Z 1st. Edition Jun. 1997 Features • Low on-resistance R DS(on) = 0.08Ω typ (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A
|
Original
|
2SJ483
ADE-208-519
O-92MOD.
15lectronic
2SJ483
Hitachi 2SJ
DSA003642
|
PDF
|
2SJ483
Abstract: DSA003780 Hitachi 2SJ
Text: 2SJ483 Silicon P Channel MOS FET High Speed Power Switching ADE-208-519 1st. Edition Features • Low on-resistance R DS on = 0.08Ω typ (at VGS = –10 V, I D = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A Outline TO-92MOD.
|
Original
|
2SJ483
ADE-208-519
O-92MOD.
2SJ483
DSA003780
Hitachi 2SJ
|
PDF
|
2SJ486
Abstract: ADE-208-512 Hitachi 2SJ Hitachi DSA00395
Text: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features • Low on-resistance R DS on = 0.5 Ω typ. (at V GS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline MPAK 3 1 D 2 1. Source
|
Original
|
2SJ486
ADE-208-512
2SJ486
Hitachi 2SJ
Hitachi DSA00395
|
PDF
|
2SJ484
Abstract: Hitachi 2SJ DSA003642 ADE-208-501A
Text: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501A Z 2nd. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 0.18 Ω typ. (at V GS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices.
|
Original
|
2SJ484
ADE-208-501A
2SJ484
Hitachi 2SJ
DSA003642
ADE-208-501A
|
PDF
|
WY SC-62 HITACHI
Abstract: 2SJ484 Hitachi DSA00389
Text: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance R DS on = 0.18 Ω typ. (at V GS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices. Outline
|
Original
|
2SJ484
ADE-208-501
WY SC-62 HITACHI
2SJ484
Hitachi DSA00389
|
PDF
|
|
|
ADE-208-512
Abstract: Hitachi 2SJ Hitachi DSA002757
Text: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching ADE-208-512 A 2nd. Edition Features • Low on-resistance R DS on = 0.5 Ω typ. (at V GS = –4V, I D = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline 2SJ486 Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
2SJ486
ADE-208-512
Hitachi 2SJ
Hitachi DSA002757
|
PDF
|
Hitachi 2SJ
Abstract: Hitachi DSA002757
Text: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching ADE-208-501 A 2nd. Edition Features • Low on-resistance R DS on = 0.18 Ω typ. (at V GS = –10V, I D = –1A) • Low drive current • High speed switching • 4V gate drive devices. Outline
|
Original
|
2SJ484
ADE-208-501
Hitachi 2SJ
Hitachi DSA002757
|
PDF
|
2sk135
Abstract: 2SK134 2SJ49 2sk134 hitachi 2sk135 2SK133 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sk133 2Sj48
Text: blE D *44^205 ÜD13D0Ö 217 IHIT4 2SK133,2SK134,2SK135 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 • FEATURES • • • • • • • High Power Gain. Excellent Frequency Response.
|
OCR Scan
|
D13D0Ö
2SK133
2SK134
2SK135
2SJ48,
2SJ49,
2SJ50
35FOR
2sk135
2SJ49 2sk134
hitachi 2sk135
2Sk135 HITACHI
2Sk134 HITACHI
2SK13S
HITACHI 2SK133
2sk133 2Sj48
|
PDF
|
2SK134
Abstract: 2SJ49 2sk134 2SK135 2SJ50 2SJ49 2SK133 hitachi 2sk135 2SJ48 2sk1 CIMI
Text: blE D *44^205 ÜD13D0Ö 217 IHIT4 2SK133,2SK134,2SK135 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 • FEATURES • • • • • • • High Power Gain. Excellent Frequency Response.
|
OCR Scan
|
2SJ48,
2SJ49,
2SJ50
D13D0Ã
2SK133
2SK134
2SK13S
D13G10
2SJ49 2sk134
2SK135
2SJ50
2SJ49
hitachi 2sk135
2SJ48
2sk1
CIMI
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SJ486 Silicon P Channel MOS FET Low FrequencyPower Switching HITACHI Features • Low on-resistance RDsum> = 0.5 Q typ. at V os= -4V , ID= -100 mA • 2.5V gate drive devices. • Small package (MPAK). Outline M PAK ô s 530 ADE-208-512 A 2nd. Edition 2SJ486
|
OCR Scan
|
2SJ486
ADE-208-512
2SJ486
|
PDF
|
Hitachi 2SJ
Abstract: No abstract text available
Text: 2SJ484 Silicon P-Channel MOS FET High Speed Power Switching HITACHI ADE-208-501 A 2nd. Edition Features • Low on-resistance ^DS on —0.18 i2 typ. (at V cs = -I0 V , ID = —I A) • Low drive current • High speed switching • 4V gate drive devices.
|
OCR Scan
|
2SJ484
ADE-208-501
10Ofis,
Hitachi 2SJ
|
PDF
|
Hitachi 2SJ
Abstract: No abstract text available
Text: 2SJ483 Silicon P Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance R dsioh = 0-08Q typ at VGS = -1 0 V, ID = -2.5 A) • 4V gate drive devices. • Large current capacitance ID= -5 A Outline 5 16 ADE-208-519 1st. Edition 2SJ483
|
OCR Scan
|
2SJ483
ADE-208-519
0-08Q
2SJ483
Hitachi 2SJ
|
PDF
|
2SJ56 2sk176
Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SJ56 HITACHI 2SK1058 MOSFET
Text: HITACHI 5 1.4 S-Series for Power Amplifiers output stages can easily be designed just by connecting extra power MOSFETs in parallel. This flexibility arises from th e p o sitiv e temperature coefficient of the pow er MOSFET, which gives the transistor the ability to share
|
OCR Scan
|
2SK176
2SJ56
2SK220
2SK221
2SK258
2SK259
2SK260
2SK1056
2SJ56 2sk176
2sJ50 mosfet
Hitachi 2sk176 2sj56
2sk133 2Sj48
2sk1058 2SJ162
transistor 2sj162
2SJ56 HITACHI
2SK1058 MOSFET
|
PDF
|
2SJ56 2sk176
Abstract: 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
Text: HITACHI 35 5.9 Television and CRT Displays B lo ck D ia g ra m Video R o— G H orizon tal y D eflection' Coil , Vertical ' Deflection , Coil 1 I Horizontal Deflection Video output - "I Focus _ _ Electrocie” B O . Deflection Signal m Vertical Ci Vertical
|
OCR Scan
|
2SC2610
2SC2611
2SC4828
2SC26U
2SK296
2SJ56 2sk176
2SK176
2sk1058 2SJ162
HITACHI 2Sk176
2SJ75
2sk133 2Sj48
2sJ50 mosfet
2sj56
2SK1058 MOSFET APPLICATION NOTES
2sk135 application
|
PDF
|
HA 12058
Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Text: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION
|
OCR Scan
|
HD25/HD
HMCS40
HL8314E"
HL8312
HL8311
HLP1000
HL7802
HL7801
HL1221
HLP5000
HA 12058
HA12047
HA12038
ha12058
17812P
HA 12046
HA12026
HA12045
17815P
17808P
|
PDF
|
