fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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STP7NB40
STT3PF30L
STD20NE03L
STP60NE03L-12
STP60NE03L-10
STP40NF03L
STP80NE03L-06
STS4DPF30L
fqp60n06
spb32N03l
rfp60n06
SSH6N80
FQP50N10
FSD6680
STP55NF06 AND ITS EQUIVALENT
SFP70N03
HGTG*N60A4D
irf630 irf640
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Hitachi MOSFET
Abstract: Hitachi DSA002730
Text: H5N2509P Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1378 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.053 Ω typ. (ID=15A, VGS=10V) Low drain cut-off current: IDSS = 1 µA max (at VDS = 250 V, VGS=0)
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H5N2509P
ADE-208-1378
D-85622
Hitachi MOSFET
Hitachi DSA002730
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Hitachi DSA0076
Abstract: H5N2509P
Text: H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 Z Target Specification 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) = 0.053 Ω typ.
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H5N2509P
ADE-208-1378
Hitachi DSA0076
H5N2509P
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Hitachi DSA0076
Abstract: H5N6001P
Text: H5N6001P Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1425A Z 2nd. Edition May 2001 Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Frange)
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H5N6001P
ADE-208-1425A
Hitachi DSA0076
H5N6001P
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Hitachi DSA0076
Abstract: HAT2088R
Text: HAT2088R Silicon N Channel MOSFET High Speed Power Switching ADE-208-1234 Z 1st. Edition Mar. 2001 Features • Low on-resistance • Low leakage current • High density mounting Outline SOP–8 8 5 6 7 8 D D D D 4 G 5 7 6 3 1 2 4 1, 2, 3 Source 4 Gate
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HAT2088R
ADE-208-1234
Hitachi DSA0076
HAT2088R
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Hitachi DSA00260
Abstract: H5N6001P
Text: H5N6001P Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1425A Z 2nd. Edition May 2001 Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Frange)
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H5N6001P
ADE-208-1425A
Hitachi DSA00260
H5N6001P
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hitachi mosfet audio
Abstract: D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317
Text: Power MOSFET Quick Reference Literature Order Number Revision Number Hitachi Semiconductor Author Name When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole
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O-220
HAF2001
500pcsxN)
O-92MOD
O-126MOD
O-126FM
O-220AB
O-220FM
O-220C
SP-10
hitachi mosfet audio
D4L DIODE
2SK2830
2SK2225
2SJ214LS
2SK1919LS
2sk2829
Hitachi MOSFET
2SK1058
transistors 2SK1317
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B647
Abstract: transistor b647 d667 B647 transistor d667 transistor B647 AC transistor 2SD647 2SD667 FP-14DA HA16654A
Text: HA16654A, HA16664A Series PWM Controlled Switching Regulator ADE-204-055 Z Rev. 0 Dec. 2000 The HA16654A and HA16664A are PWM control switching regulator ICs which drive a power MOSFET at high speed and high frequency. The standby current is limited to as small as 1.5 mA (typ). These
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HA16654A,
HA16664A
ADE-204-055
HA16654A
B647
transistor b647
d667
B647 transistor
d667 transistor
B647 AC transistor
2SD647
2SD667
FP-14DA
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d667
Abstract: b647 transistor b647 d667 transistor 2SD647 B647 AC transistor B647 transistor 2SB647 2SD667 FP-14DA
Text: HA16654A, HA16664A Series PWM Controlled Switching Regulator The HA16654A and HA16664A are PWM control switching regulator ICs which drive a power MOSFET at high speed and high frequency. The standby current is limited to as small as 1.5 mA typ . These devices incorporate totem pole circuits suited for high-speed push-pull operation at the output stage,
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HA16654A,
HA16664A
HA16654A
d667
b647
transistor b647
d667 transistor
2SD647
B647 AC transistor
B647 transistor
2SB647
2SD667
FP-14DA
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40673 MOSFET
Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F
Text: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E
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BF964
BF966
3SK107E
3SK107F
3SK107G
BF996S
40673 MOSFET
MFE131 mosfet
3SK77GR
3N159
40673
MPF201
MFE521
3SK77BL
3N200 MOSFET
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SIEMENS 800
Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80
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O-220AB
O-218
O-204
204AC
O-238AA
SIEMENS 800
950p to-247 package
MTH6N85
2SK351
IRFAF30
21n60n
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2sj217
Abstract: pf0030 hitachi 2SJ295 2SK1919 PF0040 KWSA103 PF0030 PF0042 2SJ214 2SJ220
Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m
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303L/3Â
KWSA103
HWSA10I
HWSB10I
HWSA01
PF0030
PP0031
PF0040
PP004I
2sj217
pf0030 hitachi
2SJ295
2SK1919
PF0042
2SJ214
2SJ220
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2sk1299
Abstract: PF0042 2SJ295 2SJ299 2SK1919 PF0040 KWSA103 PF0030 Hitachi Scans-001
Text: 29 HITACHI 5.4 Communications Mobile RF SAW Filters NMT/GSM KTACS HITACHI KAMT« Tb Bx Tu ft* T» 9m, hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB HWSBXa HW SA03 H W SM » O m« Q m
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303L/3Â
KWSA103
HWSA10I
HWSB10I
HWSA01
PF0030
PP0031
PF0040
PP004I
2sk1299
PF0042
2SJ295
2SJ299
2SK1919
Hitachi Scans-001
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2SJ56 2sk176
Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SJ56 HITACHI 2SK1058 MOSFET
Text: HITACHI 5 1.4 S-Series for Power Amplifiers output stages can easily be designed just by connecting extra power MOSFETs in parallel. This flexibility arises from th e p o sitiv e temperature coefficient of the pow er MOSFET, which gives the transistor the ability to share
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2SK176
2SJ56
2SK220
2SK221
2SK258
2SK259
2SK260
2SK1056
2SJ56 2sk176
2sJ50 mosfet
Hitachi 2sk176 2sj56
2sk133 2Sj48
2sk1058 2SJ162
transistor 2sj162
2SJ56 HITACHI
2SK1058 MOSFET
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2sk1299
Abstract: 2SK1763 2SK1878 2sj177 2SJ295 2SK1579 TO220FM 2SJ244 2sj235 2SJ246
Text: HITACHI 5.7 Power Conversion 3 Power Management Switch for Battery Operating Equipment P channel MOSFET Vcc Load VCC (V) VDSS (V) lyp* No. I O IN - CM CM S~9 2SJ244 12— 24 30 2SJ246 24~40 60 2SJ24S Power management Switch circuit D-IV L Series Item Package
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2SJ244
2SJ246
2SJ245
2SJ317
2SJ298
2SJ300
2SJ299
2SJ278
2SJ279
2SJ290
2sk1299
2SK1763
2SK1878
2sj177
2SJ295
2SK1579
TO220FM
2SJ244
2sj235
2SJ246
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HA16107FP
Abstract: No abstract text available
Text: HITACHI/ LINEAR DEVICES SIE D • 44^202 00117Ô1 HA16107FP/P, HA16108FP/P- T7S r - ö ’s - i t ' S 600kHz PWM Switching Regulator Controller Description HA16107P, HA16108P The HA 16107 and HA 16108 series are primary control switching regulator control IC’s appropriate for di
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HA16107FP/P,
HA16108FP/P------
600kHz
HA16107P,
HA16108P
DP-16C)
HA16107FP,
HA16108FP
HA16108FP/P
HA16107FP
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2SK1778
Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m
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303L/3Â
KWSA103
HWSA10I
HWSB10I
HWSA01
PF0030
PP0031
PF0040
PP004I
2SK1778
2SJ177
2SJ295
PF0042
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Hitachi PF0030
Abstract: 25K1772 2sk1299 PF0040 2SJ295 KWSA103 PF0030 PF0042 2SJ299 2sk1205
Text: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m
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303L/3Â
KWSA103
HWSA10I
HWSB10I
HWSA01
PF0030
PP0031
PF0040
PP004I
Hitachi PF0030
25K1772
2sk1299
2SJ295
PF0042
2SJ299
2sk1205
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Untitled
Abstract: No abstract text available
Text: HITACHI 3SK236-Silicon N-Channel Dual Gate MOSFET Application CMPAK-4 VHF RF amplifier Features 2 m r' • Excellent cross modulation characteristics • Capable of low voltage operation 4 1 . Source 2. Gatel 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C
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3SK236----------Silicon
3SK236
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marking g1s
Abstract: 3SK238
Text: HITACHI 3SK238-Silicon N-Channel Dual Gate MOSFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute M aximum Ratings Ta = 25°C
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3SK238-------------Silicon
3SK238
VC52S
marking g1s
3SK238
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Untitled
Abstract: No abstract text available
Text: HITACHI 3SK237-Silicon N-Channel Dual Gâte MOSFET Application C M P A K -4 UHF/VHF RF amplifier Features 2 • High gain and low niose • Capable of low voltage opération 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute Maximum Ratings Ta = 25°C
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3SK237----------Silicon
3SK237
3SK237
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12W 04 SMD MOSFET
Abstract: PF1002 PF0012 mosfet 12w smd PF0022 pf0017b 12W SMD MOSFET PF0027 pf0030 hitachi PF0010
Text: HITACHI 17 1.8 RF Power Modules These modules offer high efficiency along with excellent immunity to intermodulation distortion and load mismatch. MOSFET technology is well suited to use in the output stage of a cellular radio. Hitachi offers a range of MOSFET Power Amplifiers
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NMT90Q/TACS
PF0010
2SJ291
220AB
2SJ192
2SJ293
220FM
2SJ294
2SJ29S
2SJ296
12W 04 SMD MOSFET
PF1002
PF0012
mosfet 12w smd
PF0022
pf0017b
12W SMD MOSFET
PF0027
pf0030 hitachi
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2SK1254
Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin
12-pin
4AK17
2SK972
4AK15
2SK971
2SK1254
2sj177
2SK970
2SK971
2SK972
2SK973
2SK975
4AK16
4AK17
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HITACHI Power MOSFET Arrays
Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin
12-pin
4AK17
2SK972
4AK15
2SK971
HITACHI Power MOSFET Arrays
2sk1299
2SK975
2sk1306
2SK1919
2SK970
2SK971
2SK972
2SK973
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