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    HL6319 Price and Stock

    Ushio Opto Semiconductors Inc HL6319G

    Laser Diode MQW-LD 640nm 10mW - Trays (Alt: HL6319G-A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HL6319G Tray 12 Weeks, 6 Days 41
    • 1 -
    • 10 -
    • 100 $37.1755
    • 1000 $28.704
    • 10000 $28.704
    		Buy Now

    Ushio Opto Semiconductors Inc HL63192DG

    638nm / 700mW AlGaInP Laser Diode - Trays (Alt: HL63192DG)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HL63192DG Tray 12 Weeks, 6 Days 24
    • 1 -
    • 10 -
    • 100 $62.58
    • 1000 $49.3902
    • 10000 $49.3902
    		Buy Now

    Ushio Opto Semiconductors Inc HL63193MG

    638nm / 700mW AlGaInP Laser Diode - Trays (Alt: HL63193MG)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HL63193MG Tray 12 Weeks, 6 Days 40
    • 1 -
    • 10 -
    • 100 $38.0844
    • 1000 $29.4078
    • 10000 $29.4078
    		Buy Now

    HL6319 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HL6319 Hitachi Semiconductor AlGaInP Laser Diodes Original PDF
    HL6319G Hitachi Semiconductor Original PDF
    HL6319G Hitachi Semiconductor Laser Diode, 10mW Power, 635nm Wave Length, 50mA Current Original PDF
    HL6319G OpNext AlGaInP Laser Diodes Original PDF
    HL6319G Renesas Technology AlGaInP Laser Diode Original PDF
    HL6319G98 OpNext Laser Diode, 10mW Power, 635nm Wave Length, 50mA Current Original PDF
    HL6319G98-A OpNext Laser Diode: 10mW Power: 635nm Wave Length: 50mA Current Original PDF

    HL6319 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: HL6319G/20G AlGaInP Laser Diodes ADE-208-479D Z 5th Edition Dec. 2000 Description The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.


    Original     		PDF HL6319G/20G ADE-208-479D HL6319G/20G HL6319G/20G: HL6319G HL6320G D-85622 Hitachi DSA00279

    Untitled

    Abstract: No abstract text available
    Text: HL6319G/20G ODE2011-00 M Rev.0 Aug. 01, 2008 AlGaInP Laser Diodes Description The HL6319G/20G are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.


    Original     		PDF HL6319G/20G HL6319G/20G ODE2011-00 HL6319G/20G: HL6319G HL6320G

    HL6320G

    Abstract: HL6319G
    Text: HL6319G/20G ODE-208-027 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.


    Original     		PDF HL6319G/20G ODE-208-027 HL6319G/20G HL6319G/20G: HL6319G HL6320G HL6320G HL6319G

    Untitled

    Abstract: No abstract text available
    Text: HL6319G/20G AlGaInP Laser Diodes ODE-208-479E Z Rev.5 Jan. 2003 Description The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.


    Original     		PDF HL6319G/20G ODE-208-479E HL6319G/20G HL6319G/20G: HL6319G HL6320G hl6319

    HL6319G

    Abstract: HL6320G Hitachi DSA0047
    Text: HL6319/20G AlGaInP Laser Diodes Description The HL6319/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well MQW structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application • Laser levelers


    Original     		PDF HL6319/20G HL6319/20G 635nm HL6319/20G: HL6319G HL6320G HL6319G HL6320G Hitachi DSA0047

    Untitled

    Abstract: No abstract text available
    Text: HL6319G/20G ODE-208-027 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.


    Original     		PDF HL6319G/20G HL6319G/20G ODE-208-027 HL6319G/20G: HL6319G HL6320G

    Hitachi DSA00164

    Abstract: No abstract text available
    Text: HL6319G InGaAsP Laser Diodes ADE-208-479B Z 3rd. Edition June 1997 Application • Laser levelers • Measurement Features • Optical power : 10mW CW • Visible wavelength : λp=635nm typ. Internal Circuit 1 3 PD LD 2 HL6319G Absolute Maximum Ratings (TC = 25°C)


    Original     		PDF HL6319G ADE-208-479B 635nm D-85622 Hitachi DSA00164

    Oclaro

    Abstract: violet laser diode Oclaro LASER
    Text: Data Sheet HL6319G/20G AIGaInP Laser Diode Outline 638nm/10mW Features: • Optical output powr: 10mW CW  Visible light output:638nm Typ.  Low operating current: 95mA Max.  Low operating voltage: 2.7V Max.  Single transverse mode  TM mode oscillation


    Original     		PDF HL6319G/20G 638nm 638nm/10mW HL6319G/20G Oclaro violet laser diode Oclaro LASER

    Untitled

    Abstract: No abstract text available
    Text: HL6319/20G AlGaInP Laser Diodes Description The HL6319/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well MQW structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application • Laser levelers


    Original     		PDF HL6319/20G HL6319/20G 635nm

    HL6319G

    Abstract: HL6320G infrared emitting CIRCUIT Hitachi DSA00230
    Text: HL6319G/20G AlGaInP Laser Diodes ADE-208-479D Z 5th Edition Dec. 2000 Description The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.


    Original     		PDF HL6319G/20G ADE-208-479D HL6319G/20G HL6319G/20G: HL6319G HL6320G HL6319G HL6320G infrared emitting CIRCUIT Hitachi DSA00230

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL63193MG AIGaInP Laser Diode 638nm/700mW Outline Features: • Shorter wavelength: 638nm Typ. · High optical output power: 700mW · Small package: f 5.6mm · Multi transverse mode · TM mode oscillation Applications: unit:mm Internal Circuit


    Original     		PDF HL63193MG 638nm/700mW 638nm 700mW HL63193MG

    HL6319G

    Abstract: HL6320G opto device
    Text: HL6319G/20G AlGaInP Laser Diodes ODE-208-479E Z Rev.5 Jan. 2003 Description The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.


    Original     		PDF HL6319G/20G ODE-208-479E HL6319G/20G HL6319G/20G: HL6319G HL6320G HL6319G HL6320G opto device

    Untitled

    Abstract: No abstract text available
    Text: HL6319G/20G ODE-208-027A Z Rev.1 Feb. 01, 2008 AlGaInP Laser Diodes Description The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.


    Original     		PDF HL6319G/20G ODE-208-027A HL6319G/20G HL6319G/20G: HL6319G HL6320G

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL6319G/20G AIGaInP Laser Diode 638nm/10mW Features: Outline • Optical output power: 10mW CW  Visible light output:638nm Typ.  Low operating current: 95mA Max.  Low operating voltage: 2.7V Max.  Single transverse mode  TM mode oscillation


    Original     		PDF HL6319G/20G 638nm/10mW 638nm HL6319G/20G

    opnext

    Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
    Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring


    Original     		PDF D-85622 opdb-090103 opnext HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g

    biconvex lens with focal length 1 m and diameter 25.4 mm

    Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
    Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power


    Original     		PDF 658nm ML1016R 685nm ML1012R 785nm ML64114R Revised11JUN99 biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011

    hitachi DC9300

    Abstract: 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW
    Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage, Hitachi offers a complete line-up of 635nm to 830nm laser diodes


    Original     		PDF 635nm 830nm HE7601 HE8404 HE8807 HE8811 HE8812 HE7601SG HE8404SG hitachi DC9300 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW

    650nm 50mw

    Abstract: 780nm 5MW infrared laser diodes photo magneto electric camera hitachi HL6738 laser diode DVD 780nm 10mW laser diodes Hitachi DSAUTAZ005 ld261 PO40
    Text: ADE-508-011C Information and Industry Laser Diodes Information and Industry Laser Diodes Application Note Publication Date: 1st Edition, June 1996 4th Edition, February 1999 Published by: Electronic Devices Sales & Marketing Group Semiconductor & Integrated Circuits


    Original     		PDF ADE-508-011C HL8325G 650nm 50mw 780nm 5MW infrared laser diodes photo magneto electric camera hitachi HL6738 laser diode DVD 780nm 10mW laser diodes Hitachi DSAUTAZ005 ld261 PO40

    LD5033

    Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
    Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet


    Original     		PDF OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G

    opnext

    Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
    Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring


    Original     		PDF D-85622 opdb-09 opnext laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g

    laser diode 940 nM 200mW

    Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
    Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and


    Original     		PDF 200mW laser diode 940 nM 200mW LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package

    laser diode 670nm 40mW

    Abstract: dvd writer laser "Hitachi Kodaira Semiconductor" low noise, 780nm, 5mw 650NM laser diode 5mw ADE-508-011E photo magneto electric hitachi laser diode HL6720G 650nm 5mw laser with collimator
    Text: Information and Industry Laser Diodes Application Note ADE-508-011E Hitachi 5/14/01 Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human


    Original     		PDF ADE-508-011E laser diode 670nm 40mW dvd writer laser "Hitachi Kodaira Semiconductor" low noise, 780nm, 5mw 650NM laser diode 5mw ADE-508-011E photo magneto electric hitachi laser diode HL6720G 650nm 5mw laser with collimator

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original     		PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP

    Untitled

    Abstract: No abstract text available
    Text: HL6319/20G AlGalnP Laser Diodes HITACHI Description The HL6319/20G are 0.63 ¡im band AlGalnP laser diodes with a multi-quantum well MQW structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application •


    OCR Scan     		PDF HL6319/20G HL6319/20G 635nm