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    HL6360MG Price and Stock

    Ushio Opto Semiconductors Inc HL6360MG-A

    639nm / 25mW AlGaInP Laser Diode - Trays (Alt: HL6360MG-A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HL6360MG-A Tray 12 Weeks, 6 Days 116
    • 1 -
    • 10 -
    • 100 -
    • 1000 $9.301
    • 10000 $8.2938
    Buy Now

    HL6360MG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HL6360MG OpNext Low Operating Current Visible Laser Diode Original PDF

    HL6360MG Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: HL6360MG/61MG ODE-208-010B Z Rev.2 May 30, 2006 Low Operating Current Visible Laser Diode Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


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    PDF HL6360MG/61MG HL6360MG/61MG ODE-208-010B HL6360MG/61MG: HL6360MG HL6361MG

    Untitled

    Abstract: No abstract text available
    Text: HL6360MG/61MG ODE-208-010C Z Rev.3 Feb. 01, 2008 Low Operating Current Visible Laser Diode Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original
    PDF HL6360MG/61MG ODE-208-010C HL6360MG/61MG HL6360MG/61MG: HL6360MG HL6361MG

    Untitled

    Abstract: No abstract text available
    Text: HL6360MG/61MG ODE2025-00 M Rev.0 Aug. 01, 2008 Low Operating Current Visible Laser Diode Description The HL6360MG/61MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original
    PDF HL6360MG/61MG HL6360MG/61MG ODE2025-00 HL6360MG/61MG: HL6360MG HL6361MG

    OCLARO

    Abstract: No abstract text available
    Text: Data Sheet HL6360MG/61MG AIGaInP Laser Diode Outline 639nm/25mW Features: • Visible light output: 639nm Typ.  Optical output power: 20mW CW  Single transverse mode  Low operating current: 65mA Typ.  Low operating voltage: 2.5V Max.  Built-in photodiode for monitoring


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    PDF HL6360MG/61MG 639nm 639nm/25mW HL6360MG/61MG OCLARO

    hl6360mg

    Abstract: HL6361MG
    Text: HL6360MG/61MG Low Operating Current Visible Laser Diode ODE-208-010 Z Target specification Rev.0 Apr. 2005 Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for


    Original
    PDF HL6360MG/61MG ODE-208-010 HL6360MG/61MG HL6360MG/61MG: HL6360MG hl6360mg HL6361MG

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet HL6360MG/61MG AIGaInP Laser Diode 639nm/25mW Features: Outline • Visible light output: 639nm Typ.  Optical output power: 20mW CW  Single transverse mode  Low operating current: 65mA Typ.  Low operating voltage: 2.5V Max.  Built-in photodiode for monitoring


    Original
    PDF HL6360MG/61MG 639nm/25mW 639nm HL6360MG/61MG

    HL6360MG

    Abstract: HL6361MG
    Text: HL6360MG/61MG ODE-208-010B Z Rev.2 May 30, 2006 Low Operating Current Visible Laser Diode Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original
    PDF HL6360MG/61MG ODE-208-010B HL6360MG/61MG HL6360MG/61MG: HL6360MG HL6361MG HL6360MG HL6361MG

    LD5033

    Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
    Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet


    Original
    PDF OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G

    laser diode 940 nM 200mW

    Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
    Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and


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    PDF 200mW laser diode 940 nM 200mW LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package

    HL6362MG

    Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
    Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated


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    PDF 2008B D-85622 HL6362MG HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG