Untitled
Abstract: No abstract text available
Text: HLXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low
|
Original
|
PDF
|
HLXSR01608
150nm
ADS-14218
|
HLXSR01608
Abstract: No abstract text available
Text: HLXSR01608 HLXSR01608 2M x 8 STATIC RAM 1.5V Core VDD The HLXSR01608 radiation hardened 16Mbit Static proprietary design, layout and process hardening Random Access Memory SRAM is a monolithic techniques. There is no internal EDAC implemented. SRAM fabricated with Honeywell’s 150nm silicon-oninsulator CMOS (S150) technology. The 2M x 8 bit
|
Original
|
PDF
|
HLXSR01608
HLXSR01608
16Mbit
150nm
110mW
40MHz
|
Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Made changes to Table IA, parameters: IDDDOP3 , IDDDOP1, IDDDOPW1, IDDOPW40, IDDDOPW40, IDDOPR1, IDDDOPR1, IDDOPR40, IDDDOPR40, CINA, CINC. ksr 08-12-12 Robert M. Heber B Made changes to Table IA, parameters: Standby current CS disabled
|
Original
|
PDF
|
IDDOPW40,
IDDDOPW40,
IDDOPR40,
IDDDOPR40,
MIL-PRF-38535
andLXSR01608-AQH
5962H0820202VXC
HLXSR01608-AVH
|