Untitled
Abstract: No abstract text available
Text: HM100490 Series —P re lim in a ry 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM100490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys tems such as scratch pads and control/buffer storage.
|
OCR Scan
|
HM100490
65536-Words
10/12ns
500mW
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM100490-15- Preliminary 65536-words x 1-bit Fully Decoded Random Access Memory HM100490-15 is ECL 100k compatible, 65536-words % 1-bit, read/write random access memory developed for high speed systems such as main memories for super computers.
|
OCR Scan
|
HM100490-15--------------65536-words
HM100490-15
65536-words
HM100490-15
536-words
320mW
HM100490F-15
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HM100490 Series — Preliminary 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM100490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed lor high speed sys tems such as scratch pads and control/buffer storage.
|
OCR Scan
|
HM100490
65536-Words
10/12ns
500mW
HM100490-12
|
PDF
|
rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: H M 1 0 4 9 0 -1 5 Preliminary 65536-words x 1-bit Fully Decoded Random Access Memory H M 10490-15 is E C L 10k com patible, 65536-w ords x 1-bit, read/write random access m em ory developed fo r high speed sys tems such as m ain mem ories fo r super computers.
|
OCR Scan
|
65536-words
65536-w
536-w
HM100490-15
|
PDF
|
HM6116L
Abstract: HM51256P HN62404P HM65256AP HN27C301G HN613128P hn623257 HM6147 HN27256P HN613128FP
Text: • PACKAGE INFORMATION • Dual-in-line Plastic Unit: mm {inch Scale 1/1 • D P -1 6 B • D P -1 8 19 2 Í0 756) 20 32m a , J L 2 54 - 0 .2 5 C 48 - O f <■ 0 !00 ' 0 0 10> ( o 0 19 ' 0 0 0 4 ) ■J-L 0 l5 ii '"To.OlO-.«» 2 54 * 0 25 □ Í8 • 0
|
OCR Scan
|
CG-20
CG-22A
CG-24
CG-28
HM6267CG
HM6287CG
HM6787CG
HM100490CG
HM100422CG,
HM100415CG
HM6116L
HM51256P
HN62404P
HM65256AP
HN27C301G
HN613128P
hn623257
HM6147
HN27256P
HN613128FP
|
PDF
|
101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
|
OCR Scan
|
ADE-40
101490
P22n
HM50464P-12
50464 ram
|
PDF
|
HM6788P-25
Abstract: 6788P s12045 28-pin SOJ SRAM
Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. STRUCTURE IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic o f bipolar memo ries is high speed but small capacity, instead, MOS
|
OCR Scan
|
|
PDF
|
27c301
Abstract: HM6788P-25 HM6788
Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. S TR U C TU R E IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memories is high speed but small capacity, instead, MOS memories have large capacity.
|
OCR Scan
|
|
PDF
|