77106
Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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Untitled
Abstract: No abstract text available
Text: 002 HM67S3632 Series 32k-w ords x 36 bits Synchronous Static RAM Product Preview Rev. 0 HITACHI Pin Arrangement Features • • • • A u g .3 ,1995 3.3V-3%+5% Operation LVCMQS Compatible Input and Output Synchronous Operation Self-timed Late Write Single Clock Register-Register Mode
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HM67S3632
32k-w
HM67S3632BP-6
HM67S3632BP-7
14mmx
BP-119F)
995/DDR/MFM
Ml2T092
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HM67S3632
Abstract: No abstract text available
Text: ADE-203-446A Z HM67S3632 Series 32,768-word x 36-bit Synchronous Static RAM HITACHI Features • • • • • • • • • Preliminary December 19, 1995 Pin Arrangement 3.3V-3% +5% Operation LVCMOS Compatible Input and Output Synchronous Operation
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ADE-203-446A
768-word
36-bit
HM67S3632
HM67S3632
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hitachi package
Abstract: BP-119
Text: HM67S3632 Series 32,768-words x 36-bits Synchronous Fast Static RAM HITACHI ADE-203-446B Z Preliminary Rev. 2 Mar. 28, 1996 Features • 3 . 3 V - 3 % + 5 % Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Self-timed Late Write
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HM67S3632
768-words
36-bits
ADE-203-446B
HM67S3632BP-5
HM67S3632BP-6
BP-119)
HM67S3632BP-7
VDDQSA14
hitachi package
BP-119
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SW 602 BP
Abstract: No abstract text available
Text: HM67S3632 Series 32768-wordsx36 bits Synchronous Fast Static RAM Preliminary Rev. 1 HITACHI Features • • • • • • • • • Dec. 19,1995 Pin Arrangement 3.3V-3% +5% Operation L V C M O S Compatible Input and Output Synchronous Operation Self-timed Late Write
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HM67S3632
32768-wordsx36
HM67S3632BP-6
HM67S3632BP-7
14mmx22mm
BP-119)
BP7/496/250/ABC/MGK
PMMSCTD008D2
SW 602 BP
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Untitled
Abstract: No abstract text available
Text: HM67S3632 Series 32,768-words x 36-bits Synchronous Fast Static RAM HITACHI ADE -203-446B Z Preliminary Rev. 2 Mar. 28, 1996 Features • • • • • • • • • 3 . 3 V - 3 % + 5% Operation LVCMOS Compatible Input and Output Synchronous Operation
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OCR Scan
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PDF
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HM67S3632
768-words
36-bits
-203-446B
HM67S3632BP-5
HM67S3632BP-6
HM67S3632BP-7
BP-119)
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flash 32 Pin PLCC 16mbit
Abstract: 398x
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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CBV2
Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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HM6206
Abstract: 32Kx64
Text: SRAMs Cache Synchronous SRAMs P ackage P a rt N um b e r D e n i lt y O r g a n iz a tio n C y c le tim e / A c c e « » tim e (n e ) Max. Key F e a tu re LQ FP HM62C3232 1M 32K x32 9/10/12/15 Pipeline 100 HM62C3232FP-7 1M 32K x32 7 Pipeline 100 HM62C3232FP-8L
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HM62C3232
HM62C3232FP-7
HM62C3232FP-8L
HM62D3232
HM62D3232FP-7
HM67B3632
HM67S3632
HB66C3264BA
HB66D3264BA
HB66C6464BA
HM6206
32Kx64
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CBV2
Abstract: HN27C301
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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